WO2010059310A3 - Laser ablation tooling via sparse patterned masks - Google Patents

Laser ablation tooling via sparse patterned masks Download PDF

Info

Publication number
WO2010059310A3
WO2010059310A3 PCT/US2009/060402 US2009060402W WO2010059310A3 WO 2010059310 A3 WO2010059310 A3 WO 2010059310A3 US 2009060402 W US2009060402 W US 2009060402W WO 2010059310 A3 WO2010059310 A3 WO 2010059310A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser ablation
apertures
sparse
mask
masks
Prior art date
Application number
PCT/US2009/060402
Other languages
French (fr)
Other versions
WO2010059310A2 (en
Inventor
Thomas R. Corrigan
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to JP2011537454A priority Critical patent/JP2012509194A/en
Priority to CN200980146301.2A priority patent/CN102217036B/en
Priority to EP09827940.9A priority patent/EP2359389A4/en
Priority to KR1020117013922A priority patent/KR101716908B1/en
Publication of WO2010059310A2 publication Critical patent/WO2010059310A2/en
Publication of WO2010059310A3 publication Critical patent/WO2010059310A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A sparse patterned mask for use in a laser ablation process to image a substrate. The mask has a plurality of apertures for transmission of light and non-transmissive areas around the apertures. The apertures individually form a portion of a complete pattern, and a plurality of apertures from one or more masks together form the complete pattern when the masks are imaged. Making a mask sparse provides for a path to remove debris from the substrate during the laser ablation process. Multiple interlaced sparse repeating patterns can create a more complex pattern with repeat distances larger than the individual patterns.
PCT/US2009/060402 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks WO2010059310A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011537454A JP2012509194A (en) 2008-11-21 2009-10-13 Laser ablation tool through mask with sparse pattern
CN200980146301.2A CN102217036B (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks
EP09827940.9A EP2359389A4 (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks
KR1020117013922A KR101716908B1 (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/275,669 US20100129617A1 (en) 2008-11-21 2008-11-21 Laser ablation tooling via sparse patterned masks
US12/275,669 2008-11-21

Publications (2)

Publication Number Publication Date
WO2010059310A2 WO2010059310A2 (en) 2010-05-27
WO2010059310A3 true WO2010059310A3 (en) 2010-07-15

Family

ID=42196564

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/060402 WO2010059310A2 (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks

Country Status (6)

Country Link
US (2) US20100129617A1 (en)
EP (1) EP2359389A4 (en)
JP (2) JP2012509194A (en)
KR (1) KR101716908B1 (en)
CN (1) CN102217036B (en)
WO (1) WO2010059310A2 (en)

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CN102789125B (en) * 2012-07-27 2013-11-13 京东方科技集团股份有限公司 Mask plate, mat manufacturing method and LCD panel
US9142778B2 (en) * 2013-11-15 2015-09-22 Universal Display Corporation High vacuum OLED deposition source and system
CN107532275B (en) * 2015-02-05 2019-09-13 迈康尼股份公司 It is shifted forward for induced with laser and the repetition methods of high yield and the donor material shifted forward by reusing multiple target backing material plates or discrete donor dot pattern recycles
WO2018006416A1 (en) * 2016-07-08 2018-01-11 华为技术有限公司 Method and apparatus for performing optical treatment on housing surface
KR20190126780A (en) * 2017-02-09 2019-11-12 유에스 신써틱 코포레이션 Energy processed polycrystalline diamond compacts and related methods
US11097950B2 (en) * 2017-05-15 2021-08-24 Korea Electronics Technology Institute Graphene fabrication method
CN108907482B (en) * 2018-09-26 2024-01-02 无锡先导智能装备股份有限公司 Using method of laser jump type tab cutting and forming device and laser die cutting machine
US11353995B2 (en) * 2019-04-15 2022-06-07 Elo Touch Solutions, Inc. Laser-ablated gradient region of a touchscreen
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Also Published As

Publication number Publication date
WO2010059310A2 (en) 2010-05-27
US20170285457A1 (en) 2017-10-05
JP6117881B2 (en) 2017-04-19
KR101716908B1 (en) 2017-03-17
US20100129617A1 (en) 2010-05-27
KR20110095365A (en) 2011-08-24
CN102217036A (en) 2011-10-12
JP2012509194A (en) 2012-04-19
EP2359389A2 (en) 2011-08-24
JP2015231638A (en) 2015-12-24
EP2359389A4 (en) 2014-08-20
CN102217036B (en) 2014-04-23

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