WO2010077847A3 - Method of depositing tungsten film with reduced resistivity and improved surface morphology - Google Patents
Method of depositing tungsten film with reduced resistivity and improved surface morphology Download PDFInfo
- Publication number
- WO2010077847A3 WO2010077847A3 PCT/US2009/067997 US2009067997W WO2010077847A3 WO 2010077847 A3 WO2010077847 A3 WO 2010077847A3 US 2009067997 W US2009067997 W US 2009067997W WO 2010077847 A3 WO2010077847 A3 WO 2010077847A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tungsten
- film
- containing compound
- tungsten film
- reducing gas
- Prior art date
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052721 tungsten Inorganic materials 0.000 title abstract 8
- 239000010937 tungsten Substances 0.000 title abstract 8
- 238000000151 deposition Methods 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 5
- 150000001875 compounds Chemical class 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010926 purge Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980152590.7A CN102265383B (en) | 2008-12-31 | 2009-12-15 | Method of depositing tungsten film with reduced resistivity and improved surface morphology |
KR1020117017875A KR101263856B1 (en) | 2008-12-31 | 2009-12-15 | Method of depositing tungsten film with reduced resistivity and improved surface morphology |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14198808P | 2008-12-31 | 2008-12-31 | |
US61/141,988 | 2008-12-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010077847A2 WO2010077847A2 (en) | 2010-07-08 |
WO2010077847A3 true WO2010077847A3 (en) | 2010-09-23 |
Family
ID=42285474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/067997 WO2010077847A2 (en) | 2008-12-31 | 2009-12-15 | Method of depositing tungsten film with reduced resistivity and improved surface morphology |
Country Status (5)
Country | Link |
---|---|
US (1) | US8071478B2 (en) |
KR (1) | KR101263856B1 (en) |
CN (1) | CN102265383B (en) |
TW (1) | TWI394858B (en) |
WO (1) | WO2010077847A2 (en) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9076843B2 (en) | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US8129270B1 (en) | 2008-12-10 | 2012-03-06 | Novellus Systems, Inc. | Method for depositing tungsten film having low resistivity, low roughness and high reflectivity |
US20100267230A1 (en) | 2009-04-16 | 2010-10-21 | Anand Chandrashekar | Method for forming tungsten contacts and interconnects with small critical dimensions |
US9548228B2 (en) | 2009-08-04 | 2017-01-17 | Lam Research Corporation | Void free tungsten fill in different sized features |
US9034768B2 (en) | 2010-07-09 | 2015-05-19 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
KR101907971B1 (en) * | 2011-07-07 | 2018-10-16 | 주식회사 원익아이피에스 | Method of depositing metal for fabricating contact plugs of semiconductor device |
WO2013148880A1 (en) * | 2012-03-27 | 2013-10-03 | Novellus Systems, Inc. | Tungsten feature fill |
US11437269B2 (en) * | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
JP6017396B2 (en) * | 2012-12-18 | 2016-11-02 | 東京エレクトロン株式会社 | Thin film forming method and thin film forming apparatus |
US9082826B2 (en) | 2013-05-24 | 2015-07-14 | Lam Research Corporation | Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features |
US8900999B1 (en) | 2013-08-16 | 2014-12-02 | Applied Materials, Inc. | Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application |
US9748105B2 (en) | 2013-08-16 | 2017-08-29 | Applied Materials, Inc. | Tungsten deposition with tungsten hexafluoride (WF6) etchback |
US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
CN104157607B (en) * | 2014-09-01 | 2017-02-15 | 上海先进半导体制造股份有限公司 | Optimization method for back side pressure in tungsten deposition process |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
JP6706903B2 (en) * | 2015-01-30 | 2020-06-10 | 東京エレクトロン株式会社 | Method for forming tungsten film |
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
US9613818B2 (en) | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
CN106328500B (en) * | 2015-07-02 | 2019-11-05 | 无锡华润上华科技有限公司 | The deposition method of tungsten film |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
US10991586B2 (en) | 2015-12-19 | 2021-04-27 | Applied Materials, Inc. | In-situ tungsten deposition without barrier layer |
US10468263B2 (en) * | 2015-12-19 | 2019-11-05 | Applied Materials, Inc. | Tungsten deposition without barrier layer |
US10480066B2 (en) | 2015-12-19 | 2019-11-19 | Applied Materials, Inc. | Metal deposition methods |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US10566211B2 (en) | 2016-08-30 | 2020-02-18 | Lam Research Corporation | Continuous and pulsed RF plasma for etching metals |
JP6751631B2 (en) * | 2016-09-13 | 2020-09-09 | 東京エレクトロン株式会社 | How to fill the recesses of the board with tungsten |
JP6788545B2 (en) * | 2017-04-26 | 2020-11-25 | 東京エレクトロン株式会社 | How to form a tungsten film |
WO2019036292A1 (en) | 2017-08-14 | 2019-02-21 | Lam Research Corporation | Metal fill process for three-dimensional vertical nand wordline |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
WO2019055510A1 (en) | 2017-09-12 | 2019-03-21 | Applied Materials, Inc. | Low temperature deposition of iridium containing films |
SG11202008268RA (en) | 2018-03-19 | 2020-10-29 | Applied Materials Inc | Methods for depositing coatings on aerospace components |
WO2019209381A1 (en) * | 2018-04-24 | 2019-10-31 | Applied Materials, Inc. | Tungsten deposition without barrier layer |
WO2019209401A1 (en) | 2018-04-27 | 2019-10-31 | Applied Materials, Inc. | Protection of components from corrosion |
JP2021523292A (en) | 2018-05-03 | 2021-09-02 | ラム リサーチ コーポレーションLam Research Corporation | How to deposit tungsten and other metals in a 3D NAND structure |
KR102513403B1 (en) * | 2018-07-30 | 2023-03-24 | 주식회사 원익아이피에스 | Methods of depositing tungsten |
US10636705B1 (en) | 2018-11-29 | 2020-04-28 | Applied Materials, Inc. | High pressure annealing of metal gate structures |
SG11202109796QA (en) | 2019-03-11 | 2021-10-28 | Lam Res Corp | Precursors for deposition of molybdenum-containing films |
US11404290B2 (en) * | 2019-04-05 | 2022-08-02 | Mks Instruments, Inc. | Method and apparatus for pulse gas delivery |
US11732353B2 (en) | 2019-04-26 | 2023-08-22 | Applied Materials, Inc. | Methods of protecting aerospace components against corrosion and oxidation |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
CN111139451A (en) * | 2020-01-02 | 2020-05-12 | 长江存储科技有限责任公司 | Film structure, film structure deposition method and equipment |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
CN115836380A (en) * | 2020-11-20 | 2023-03-21 | 朗姆研究公司 | Low resistance pulsed CVD tungsten |
US20220359279A1 (en) * | 2021-05-10 | 2022-11-10 | Applied Materials, Inc. | Methods of forming void and seam free metal features |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050032364A1 (en) * | 2001-08-14 | 2005-02-10 | Kazuya Okubo | Method of forming tungsten film |
US20080227291A1 (en) * | 2001-07-16 | 2008-09-18 | Lai Ken K | Formation of composite tungsten films |
US20080254623A1 (en) * | 2001-05-22 | 2008-10-16 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten for high aspect ratio and small features |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5231056A (en) | 1992-01-15 | 1993-07-27 | Micron Technology, Inc. | Tungsten silicide (WSix) deposition process for semiconductor manufacture |
US6156382A (en) | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
US6099904A (en) | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
JP2002536549A (en) * | 1999-02-12 | 2002-10-29 | ゲレスト インコーポレイテッド | Chemical vapor deposition of tungsten nitride |
US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US7141494B2 (en) * | 2001-05-22 | 2006-11-28 | Novellus Systems, Inc. | Method for reducing tungsten film roughness and improving step coverage |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
TW589684B (en) | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
WO2003064724A1 (en) | 2001-12-17 | 2003-08-07 | Applied Materials, Inc. | Process for tungsten deposition by pulsed gas flow cvd |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US20030157760A1 (en) | 2002-02-20 | 2003-08-21 | Applied Materials, Inc. | Deposition of tungsten films for dynamic random access memory (DRAM) applications |
US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6924223B2 (en) * | 2003-09-30 | 2005-08-02 | Tokyo Electron Limited | Method of forming a metal layer using an intermittent precursor gas flow process |
CN100435316C (en) * | 2006-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Method for forming connecting hole with high depth and width ratio |
-
2009
- 2009-12-15 CN CN200980152590.7A patent/CN102265383B/en not_active Expired - Fee Related
- 2009-12-15 WO PCT/US2009/067997 patent/WO2010077847A2/en active Application Filing
- 2009-12-15 US US12/637,864 patent/US8071478B2/en not_active Expired - Fee Related
- 2009-12-15 KR KR1020117017875A patent/KR101263856B1/en active IP Right Grant
- 2009-12-16 TW TW098143180A patent/TWI394858B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080254623A1 (en) * | 2001-05-22 | 2008-10-16 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten for high aspect ratio and small features |
US20080227291A1 (en) * | 2001-07-16 | 2008-09-18 | Lai Ken K | Formation of composite tungsten films |
US20050032364A1 (en) * | 2001-08-14 | 2005-02-10 | Kazuya Okubo | Method of forming tungsten film |
Also Published As
Publication number | Publication date |
---|---|
KR101263856B1 (en) | 2013-05-13 |
CN102265383A (en) | 2011-11-30 |
WO2010077847A2 (en) | 2010-07-08 |
TWI394858B (en) | 2013-05-01 |
US8071478B2 (en) | 2011-12-06 |
US20100167527A1 (en) | 2010-07-01 |
TW201035356A (en) | 2010-10-01 |
KR20110108382A (en) | 2011-10-05 |
CN102265383B (en) | 2014-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010077847A3 (en) | Method of depositing tungsten film with reduced resistivity and improved surface morphology | |
JP3140111U (en) | Gas supply equipment for semiconductor manufacturing equipment | |
WO2007118006A3 (en) | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition | |
WO2009060320A3 (en) | Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device | |
WO2006107545A3 (en) | Method for forming a barrier/seed layer for copper metallization | |
WO2007117989A3 (en) | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition | |
WO2011087698A3 (en) | Pecvd multi-step processing with continuous plasma | |
WO2008002844A3 (en) | Method for depositing an amorphous carbon film with improved density and step coverage | |
WO2007115029A3 (en) | Method of forming mixed rare earth oxide and mixed rare earth aluminate films by atomic layer deposition | |
WO2004007794A3 (en) | Pulsed nucleation deposition of tungsten layers | |
WO2006057709A8 (en) | Method for deposition of metal layers from metal carbonyl precursors | |
TW200721515A (en) | Photovoltaic contact and wiring formation | |
WO2008027214A3 (en) | Methods and apparatus for barrier interface preparation of copper interconnect | |
WO2007111780A3 (en) | METHOD OF PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF TaC AND TaCN FILMS HAVING GOOD ADHESION TO COPPER | |
TW200626748A (en) | Methods for depositing tungsten layers employing atomic layer deposition techniques | |
WO2005081933A3 (en) | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium | |
WO2008024566A3 (en) | Overall defect reduction for pecvd films | |
JP2006516833A5 (en) | ||
WO2007111779A8 (en) | Method of integrating peald ta-containing films into cu metallization | |
WO2007117797A3 (en) | Method of forming a metal carbide or metal carbonitride film having improved adhesion | |
WO2008121478A3 (en) | Roll-to-roll plasma enhanced chemical vapor deposition method of barrier layers comprising silicon and carbon | |
WO2008052705A8 (en) | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma | |
WO2010062582A3 (en) | Vapor deposition method for ternary compounds | |
WO2007001878A3 (en) | Gapfill using deposition-etch sequence | |
TW200624589A (en) | High-throughput HDP-CVD processes for advanced gapfill applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980152590.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09836827 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20117017875 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09836827 Country of ref document: EP Kind code of ref document: A2 |