WO2010087930A1 - Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes - Google Patents
Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes Download PDFInfo
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- WO2010087930A1 WO2010087930A1 PCT/US2009/069581 US2009069581W WO2010087930A1 WO 2010087930 A1 WO2010087930 A1 WO 2010087930A1 US 2009069581 W US2009069581 W US 2009069581W WO 2010087930 A1 WO2010087930 A1 WO 2010087930A1
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- WIPO (PCT)
- Prior art keywords
- molecular fluorine
- silicon thin
- etching
- mbara
- thin film
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 42
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 34
- 229910052710 silicon Inorganic materials 0.000 title claims description 34
- 239000010703 silicon Substances 0.000 title claims description 34
- 238000005530 etching Methods 0.000 title claims description 18
- 230000008569 process Effects 0.000 title description 16
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000004140 cleaning Methods 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims description 18
- 230000003068 static effect Effects 0.000 claims description 5
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract description 5
- 229910052731 fluorine Inorganic materials 0.000 description 24
- 239000011737 fluorine Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 15
- 230000004913 activation Effects 0.000 description 11
- 238000011065 in-situ storage Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/04—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Improved techniques for the cleaning of amorphous and microcrystalline silicon thin films used in photovoltaic applications. In greater detail, methods for the use of molecular fluorine for cleaning of thin films used in photovoltaic applications and devices formed thereby are described.
Description
MOLECULAR FLUORINE ETCHING OF SILICON THIN FILMS FOR
PHOTOVOLTAIC AND OTHER LOWER-TEMPERATURE CHEMICAL
VAPOR DEPOSITION PROCESSES
FIELD OF THE INVENTION
(001) The present invention relates to new methods for the cleaning of amorphous and microcrystalline silicon thin films for photovoltaic applications and to devices formed thereby.
BACKGROUND OF THE INVENTION
(002) Methods for the cleaning of amorphous and microcrystalline silicon thin films for photovoltaic fabrication have largely been adopted from methods used for liquid crystal display (LCD) and semiconductor devices. The manufacture of these latter devices requires chamber temperatures in excess of 2800C and typically involves the layering of several different types of thin films; for example, in addition to silicon films, SiO2, Si3N4, SiOxNy, metal and metal oxide films may be formed, hi the range of manufacturing conditions, molecular fluorine does not react quickly with the non-silicon films. Therefore, it is not convenient to clean these non-silicon films using molecular fluorine. Increasing the chamber temperatures above the manufacturing temperatures would help the reactivity, but would not be economical because of the time and energy involved.
(003) To overcome the temperature problems associated with the use of molecular fluorine, the use of fluorine radicals to remove the thin films has been carried out. The fluorine radicals are created by either in situ activation or external remote plasma source (RPS) activation of molecular fluorine or fluorine containing gases, e.g. NF3 or SF6, to generate the fluorine radicals. When using fluorine radicals, the rate at which the chamber cleaning can be accomplished is dependent upon the rate and efficiency of the
activation of the fluorine containing gases. Therefore, the cleaning step can constitute a significant fraction of the overall fabrication cycle, resulting in reduced manufacturing capacity and the requirement for excessive tooling. In addition, the equipment needed for activation of fluorine containing gases, especially RPS units, can add significant expense to the fabrication process and are know to be troublesome points-of-failure, which reduce the effective uptime for the manufacturing process.
(004) Moreover, fluorine radicals produced by either in situ or RPS activation are very reactive and not very selective, thereby causing damage to seals, RF generators, and other important equipment inside or associated with the fabrication chamber. Also, RPS and in situ activation necessarily occurs at limited sources, with the distribution of fluorine radicals being highly anisotropic. This results in the requirement for so-called "overetch", i.e. a time period of radical generation well in excess of the stoichiometric requirement for cleaning, in order to clean the harder to reach places in the reaction chamber.
(005) US patent number 6,880,591 (Goto et al.) recognizes that molecular fluorine can be used for chamber cleaning of silicon processes, but is focused on high-temperature regimes and is intended for LCD display processes. In particular, Goto et al. suggests temperatures for use of molecular fluorine well in excess of the temperatures used for LCD production; i.e. between 2800C and 4000C, and preferably about 450° C. It is believed that these high temperatures are chosen to compensate for the low partial pressures of fluorine allowed by the Goto et al process, e.g. less than 1 mbar. It is noted that Goto et al found cleaning with molecular fluorine was not completely effective and needed to be coupled with either in situ and/or RPS activation,
(006) It is also noted that Fluorine containing gases other than molecular fluorine, such as NF3, SF6, and CxFy compounds, are not effective cleaning agents for silicon films at
temperatures below 5000C, and for commercial applications, at temperatures below 9000C.
(007) The manufacture of MEMS devices has also provided guidance for the thin film photovoltaic industry. In general, in MEMS manufacturing, the aim of using molecular fluorine is to release devices fabricated from compounds like SiO2 and Si3N4 from a matrix of silicon. In particular, by etching with molecular fluorine at low temperatures, e.g. room temperature, and relatively high pressures, e.g. 250 mbara, the silicon film making up the matrix can be completely removed without any deleterious reactions of the molecular fluorine with the device components. However at higher temperatures, the selectivity of fluorine for silicon over the other compounds decreases, and therefore, the usefulness of molecular fluorine is diminished at elevated temperatures, (see Arana et al., "Isotropic etching of silicon in fluorine gas for MEMS micromachine", J. Micromech. Microeng., vol 17, 384-392, 2007).
(008) There remains a need in the art for improvements to apparatus and methods for the cleaning of amorphous and microcrystalline silicon thin films for photovoltaic applications.
SUMMARY OF THE PRESENT INVENTION
(009) The present invention provides improved techniques and apparatus for the cleaning of amorphous and microcrystalline silicon thin films used in photovoltaic applications. In greater detail, the present invention provides methods and apparatus for the use of molecular fluorine for cleaning of thin films that overcome the disadvantages noted above.
DETAILED DESCRIPTION OF THE INVENTION
(010) The present invention relates to the use of molecular fluorine for etching of silicon thin-films for photovoltaic applications. The disadvantages noted above with respect to LCD and MEMS processes can be avoided. In particular, the processes for production of thin-film photovoltaic devices are conducted at lower temperatures than the processes for thin-film transistor LCD devices. For example, photovoltaic processes are typically carried out between 50°Cand 3000C. Molecular fluorine reacts well with silicon in this temperature range. In accordance with the present invention, the use of molecular fluorine at the deposition temperature and at partial pressures between 1 mbara and 1000 mbara, accelerates cleaning and thereby improves productivity. Pressures below those used for MEMS production can be employed effectively.
(011) Because, photovoltaic processes involve only the deposition of lightly doped silicon films and do not require deposition of films that are poorly etched by molecular fluorine at lower temperatures, the cleaning and etching processes can be carried out effectively. In particular, there is no need for activation to form fluorine radicals, because the non-silicon films are not present. This means that there is no requirement for activation equipment to produce the fluorine radicals, which reduces the cost of capital equipment, and thereby reduces the cost of production for the photovoltaic panels.
(012) The methods of the present invention can be carried in a number of ways. In one embodiment, the fluorine is introduced to the chamber at an initial static partial pressure in stoichiometric excess of the silicon in the thin film to be cleaned. The excess fluorine allows the cleaning to go to completion in a finite, and commercially desirable, time. In another embodiment, the fluorine is introduced to the chamber at an initial static partial pressure approximately equal to the stoichiometric amount required to fully clean the thin film. In this embodiment, the thin-film can be greatly reduced in thickness, which is often acceptable in order to allow for another deposition cycle. When using this
embodiment in repetitive cycles, a steady state cleaning is created with the lowest fluorine use that is still commercially viable with respect to cycle time. In a further embodiment, the fluorine is introduced to the chamber at an initial partial pressure and additional fluorine is added at a steady or varying rate. A vacuum pump may be used to keep the chamber at the constant or varying pressure. With this embodiment, the reaction rate can be varied in accordance with the user specified recipe, because the reaction rate will vary at a fixed temperature with changing partial pressure of available molecular fluorine. Alternatively, this embodiment allows a relatively high and constant partial pressure to be maintained while the cleaning takes place, thereby accomplishing a constant cleaning rate.
(013) Experiments have been carried out according to the present invention. Data was collected and results are shown in the graph below. The experiment comprised cleaning a 2 micron sample of silicon using molecular fluorine at 2000C. The 2 micron silicon film was deposited on an aluminium under layer, which is not appreciably etched by molecular fluorine at 2000C below 1000 mbara. A portion of the silicon thin film sample was covered by a sapphire disk, which is also not appreciably etched with molecular fluorine at 2000C below 1000 mbara. The experiment consisted of exposing the silicon films to molecular fluorine at various partial pressures at 2000C, after which the silicon film samples were removed from the reaction chamber. The sapphire disk was removed and the height difference of the etched and unetched surfaces were measured by profilometry in order to calculate the etch rate.
(014) The gathered data is shown in the graph below, wherein it is clear that increasing chamber pressure corresponds to increased cleaning or etch rate at 200° C. Comparing the results for the present invention to known cleaning methods proves the superiority of the present method. For example, some commercially available silicon-based thin film photovoltaic processes operate at or near 2000C, and use a recipe having an average device thickness of 2 μm. hi these processes, the process chamber is cleaned after each
substrate deposition, with cleaning time taking from 5 to 20 minutes to complete. The data of the method according to the present invention shows that an etch rate of 8.54 A / sec - mbara can be achieved, which means that a 2 μm film can be successfully cleaned in 60 seconds using molecular fluorine held at a constant partial pressure of 39 mbara and a temperature of 2000C. The cleaning rate according to the present invention is therefore 5 to 20 times faster than currently available cleaning recipes relying on in situ or RPS activation.
(015) In a further example, some commercially thin-film processes clean only daily after depositing silicon films at comparable rates to the example above. This cleaning stage can take from 100 to 240 minutes to complete. The results of the experiments according to the present invention indicate that a film of 100 μm thickness can be successfully cleaned in 20 minutes using molecular fluorine held at a constant partial pressure of 100 mbara and at a temperature of 2000C. This etch rate is 5 to 12 times faster than the curr reently available cleaning recipes relying on in situ or RPS activation.
(017) It is anticipated that other embodiments and variations of the present invention will become readily apparent to the skilled artisan in the light of the foregoing description, and it is intended that such embodiments and variations likewise be included within the scope of the invention as set out in the appended claims.
Claims
1. A method of etching a silicon thin film for use in photovoltaic devices comprising using molecular fluorine as the etching agent.
2. The method of claim 1 wherein etching is performed at a temperature between 500C and 3000C and a partial pressure between 1 mbara and 1000 mbara.
3. The method of claim 1 wherein the molecular fluorine is introduced to an etching chamber at an initial static partial pressure in stoichiometric excess of the amount needed to etch the silicon thin film.
4. The method of claim 1 wherein the molecular fluorine is introduced to an etching chamber at an initial static partial pressure equal to the stoichiometric amount required to etch the silicon thin film.
5. The method of claim 4 wherein repetitive cycles of etching are performed to achieve steady state cleaning and use the lowest amount of molecular fluorine that is commercially viable.
6. The method of claim 1 wherein the molecular fluorine is introduced to an etching chamber at an initial static partial below the stoichiometric amount required to etch the silicon thin film and additional molecular fluorine is added at a steady or varying rate.
7. The method of claim 1 wherein etching is performed at a temperature of 2000C and a partial pressure between 1 mbara and 1000 mbara.
8. The method of claim 7 wherein the partial pressure is between 1 mbara and 350 mbara.
9. The method of claim 8 wherein the partial pressure is 39 mbara.
10. The method of claim 8 wherein the partial pressure is 100 mbara.
11. The method of claim 1 wherein the etch rate is greater than 8 A / sec - mbara.
12. The method of claim 1 wherein the silicon thin film has 2 μm completely removed in less than 60 seconds.
13. The method of claim 1 wherein the silicon thin film has 100 μm film completely removed in less than 20 minutes.
14. The method of claim 1 wherein partial pressure of the molecular fluorine is adjusted during the etching to control the etch rate of the silicon thin film.
15. A silicon thin film that has been etched using molecular fluorine as the etching agent.
16. A photovoltaic device having a silicon thin film that has been etched using molecular fluorine as the etching agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009801559551A CN102292169A (en) | 2009-01-27 | 2009-12-28 | Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14750009P | 2009-01-27 | 2009-01-27 | |
| US61/147,500 | 2009-01-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2010087930A1 true WO2010087930A1 (en) | 2010-08-05 |
Family
ID=42395933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2009/069581 WO2010087930A1 (en) | 2009-01-27 | 2009-12-28 | Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20110139201A (en) |
| CN (1) | CN102292169A (en) |
| TW (1) | TW201034232A (en) |
| WO (1) | WO2010087930A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011051251A1 (en) * | 2009-10-26 | 2011-05-05 | Solvay Fluor Gmbh | Etching process for producing a tft matrix |
| EP2608900A4 (en) * | 2010-08-25 | 2016-04-20 | Linde Ag | Chemical vapor deposition chamber cleaning with molecular fluorine |
| CN105981192A (en) * | 2013-12-13 | 2016-09-28 | E.I.内穆尔杜邦公司 | System for forming an electroactive layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
| US6544345B1 (en) * | 1999-07-12 | 2003-04-08 | Asml Us, Inc. | Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries |
| US6620256B1 (en) * | 1998-04-28 | 2003-09-16 | Advanced Technology Materials, Inc. | Non-plasma in-situ cleaning of processing chambers using static flow methods |
| WO2007116033A1 (en) * | 2006-04-10 | 2007-10-18 | Solvay Fluor Gmbh | Etching process |
-
2009
- 2009-12-28 KR KR1020117019825A patent/KR20110139201A/en not_active Application Discontinuation
- 2009-12-28 WO PCT/US2009/069581 patent/WO2010087930A1/en active Application Filing
- 2009-12-28 CN CN2009801559551A patent/CN102292169A/en active Pending
- 2009-12-31 TW TW098146515A patent/TW201034232A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
| US6620256B1 (en) * | 1998-04-28 | 2003-09-16 | Advanced Technology Materials, Inc. | Non-plasma in-situ cleaning of processing chambers using static flow methods |
| US6544345B1 (en) * | 1999-07-12 | 2003-04-08 | Asml Us, Inc. | Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries |
| WO2007116033A1 (en) * | 2006-04-10 | 2007-10-18 | Solvay Fluor Gmbh | Etching process |
Non-Patent Citations (1)
| Title |
|---|
| REICHE ET AL.: "Modification of Si(100Surfaces by SF6 Plasma Etching -Application to Wafer Direct Bonding.", CRYSTAL RESEARCH TECHNOLOGY, vol. 35, no. 6-7, 2000, pages 807 - 821 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011051251A1 (en) * | 2009-10-26 | 2011-05-05 | Solvay Fluor Gmbh | Etching process for producing a tft matrix |
| EP2608900A4 (en) * | 2010-08-25 | 2016-04-20 | Linde Ag | Chemical vapor deposition chamber cleaning with molecular fluorine |
| CN105981192A (en) * | 2013-12-13 | 2016-09-28 | E.I.内穆尔杜邦公司 | System for forming an electroactive layer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110139201A (en) | 2011-12-28 |
| CN102292169A (en) | 2011-12-21 |
| TW201034232A (en) | 2010-09-16 |
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