WO2010095564A1 - Organic electroluminescent element, and illuminating device and display device each comprising the element - Google Patents

Organic electroluminescent element, and illuminating device and display device each comprising the element Download PDF

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WO2010095564A1
WO2010095564A1 PCT/JP2010/052043 JP2010052043W WO2010095564A1 WO 2010095564 A1 WO2010095564 A1 WO 2010095564A1 JP 2010052043 W JP2010052043 W JP 2010052043W WO 2010095564 A1 WO2010095564 A1 WO 2010095564A1
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group
ring
organic
layer
light emitting
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片倉 利恵
秀雄 ▲高▼
加藤 栄作
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コニカミノルタホールディングス株式会社
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    • H05B33/00Electroluminescent light sources
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Definitions

  • the present invention relates to an organic electroluminescence element, a lighting device and a display device including the element.
  • ELD electroluminescence display
  • an inorganic electroluminescent element and an organic electroluminescent element are mentioned.
  • Oriented electroluminescent elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements.
  • an organic electroluminescence element (organic EL element) has a structure in which a thin film containing a fluorescent or phosphorescent organic compound is sandwiched between a cathode and an anode, and recombines by injecting electrons and holes into the thin film.
  • organic EL elements are formed by an organic vapor deposition method using a high vacuum such as 10 ⁇ 4 Pa or less (dry process).
  • a high vacuum such as 10 ⁇ 4 Pa or less (dry process).
  • organic EL elements can be increased in size and mass-produced in the future. Considering the properties, the formation of the organic layer by the vacuum deposition method is not preferable in terms of production efficiency and manufacturing cost.
  • the dopant when the dopant is contained in the light emitting layer by the vacuum vapor deposition method, the dopant is uneven on the substrate during the vapor deposition, which causes the unevenness of the colored light and lowers the quality. This becomes a more prominent problem when the organic EL element is increased in size. Further, when a plurality of dopants are contained, it is technically difficult.
  • An object of the present invention is to provide an organic electroluminescence element having a high external extraction quantum efficiency, a low driving voltage, and a long lifetime, and an illumination device and a display device including the element.
  • An organic electroluminescence device in which a plurality of constituent layers including two or more light emitting layers are sandwiched between an anode and a cathode, An organic electroluminescence device, wherein at least two layers of the light emitting layer are manufactured through a process of manufacturing by a wet process.
  • P and Q each represent a carbon atom or a nitrogen atom
  • A1 represents an atomic group forming an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with PC.
  • A2 represents an atomic group that forms an aromatic heterocycle with QN.
  • P1-L1-P2 represents a bidentate ligand
  • P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
  • L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
  • j1 represents an integer of 1 to 3
  • j2 represents an integer of 0 to 2
  • j1 + j2 is 2 or 3.
  • M1 represents a group 8-10 transition metal element in the periodic table. ] 4).
  • Z represents a substituent.
  • P and Q each represent a carbon atom or a nitrogen atom
  • A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with P—C.
  • P1-L1-P2 represents a bidentate ligand
  • P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
  • L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
  • j1 represents an integer of 1 to 3
  • j2 represents an integer of 0 to 2
  • j1 + j2 is 2 or 3.
  • M1 represents a group 8-10 transition metal element in the periodic table. ] 5). 5.
  • R03 represents a substituent
  • R04 represents a hydrogen atom or a substituent
  • a plurality of R04 may be bonded to each other to form a ring.
  • n01 represents an integer of 1 to 4.
  • R05 represents a hydrogen atom or a substituent, and a plurality of R04 or a plurality of R05 may be bonded to each other to form a ring.
  • n02 represents an integer of 1 to 2.
  • R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring.
  • n03 represents an integer of 1 to 4.
  • Z1 represents an atomic group necessary for forming a 6-membered aromatic hydrocarbon ring or a 5-membered or 6-membered aromatic heterocycle together with C—C.
  • Z2 represents an atomic group necessary for forming a hydrocarbon ring or a heterocyclic ring.
  • P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
  • L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
  • j1 represents an integer of 1 to 3
  • j2 represents an integer of 0 to 2
  • j1 + j2 is 2 or 3.
  • M1 represents a group 8-10 transition metal element in the periodic table.
  • R04 and R06 and R05 and R06 may be bonded to each other to form a ring. ] 6).
  • R03 represents a substituent
  • R04 represents a hydrogen atom or a substituent
  • a plurality of R04 may be bonded to each other to form a ring.
  • n01 represents an integer of 1 to 4.
  • R05 represents a hydrogen atom or a substituent, and a plurality of R05 may be bonded to each other to form a ring.
  • n02 represents an integer of 1 to 2.
  • R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring.
  • n03 represents an integer of 1 to 3.
  • R07 represents a substituent or a single bond.
  • P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
  • L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
  • j1 represents an integer of 1 to 3
  • j2 represents an integer of 0 to 2
  • j1 + j2 is 2 or 3.
  • M1 represents a group 8-10 transition metal element in the periodic table. ] 7). 7.
  • the organic electroluminescence device as described in any one of 2 to 6 above, wherein the phosphorescent organometallic complex is an iridium complex.
  • An illuminating device comprising the organic electroluminescence element as described in any one of 1 to 12 above.
  • a display device comprising the organic electroluminescence element according to any one of 1 to 12 above.
  • an organic electroluminescence element having a high external extraction quantum efficiency, a low driving voltage, and a long lifetime, and an illumination device and a display device including the element can be provided.
  • FIG. 4 is a schematic diagram of a display unit A.
  • FIG. It is a schematic diagram of a pixel. It is a schematic diagram of a passive matrix type full-color display device. It is the schematic of an illuminating device. It is a schematic diagram of an illuminating device.
  • the organic EL device of the present invention has the structure according to any one of claims 1 to 10 and has high external extraction quantum efficiency, low driving voltage, and long life.
  • An element could be provided.
  • a display device and a lighting device including the organic electroluminescence element could be provided.
  • the present inventors diligently studied the above problem, and in particular, when the thickness of the film is increased, the above-described non-uniform film is likely to be formed, and when the film thickness is small, it is difficult to form. found.
  • the film thickness of the light emitting layer is simply increased and the dopant (also referred to as light emitting dopant) is non-uniformly present, carrier movement in the light emitting layer is hindered, leading to a decrease in external extraction efficiency and an increase in voltage.
  • the external extraction quantum efficiency is high, the driving voltage is low, and the lifetime is long.
  • An organic EL element can be provided.
  • the organic EL device of the present invention is characterized in that it is produced through a process in which at least two layers of the light emitting layer, which is a constituent layer of the device, are produced by a wet process, and a dopant (
  • a phosphorescent compound also referred to as a phosphorescent metal complex or the like
  • a compound represented by the general formula (1) organometallic complex, Also referred to as a metal complex compound.
  • the phosphorescent metal complex contained in the organic EL device of the present invention is preferably a compound represented by the above general formula (1).
  • the compound represented by the general formula (1) is a preferred embodiment that is contained as a light emitting dopant in the light emitting layer of the organic EL device of the present invention. (The constituent layers of the organic EL device of the present invention will be described in detail later).
  • examples of the aromatic hydrocarbon ring that A1 forms with PC include a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring, Triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring, Examples include a pyrene ring, a pyrantolen ring, and anthraanthrene ring.
  • These rings may further have a substituent described later.
  • the aromatic heterocycle formed by A1 together with P—C includes a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, Benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, azacarbazole A ring etc. are mentioned.
  • the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
  • These rings may further have a substituent described later.
  • the aromatic heterocycle formed by A2 together with QN includes an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole ring, a thiatriazole ring, Examples include a thiazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
  • These rings may further have a substituent described later.
  • substituent examples include alkyl groups (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group).
  • alkyl groups for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group.
  • aromatic hydrocarbon group also referred to as aromatic hydrocarbon ring group, aromatic carbocyclic group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, Fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group, etc.
  • An aromatic heterocyclic group for example, pyridyl group, pyrimidinyl group, furyl group, pyrroly
  • examples of the bidentate ligand represented by P1-L1-P2 include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabole, acetylacetone, and picolinic acid. .
  • j1 represents an integer of 1 to 3
  • j2 represents an integer of 0 to 2
  • j1 + j2 represents 2 or 3
  • j2 is preferably 0.
  • M1 is a transition metal element of group 8 to 10 in the periodic table of elements (also simply referred to as transition metal), and among these, iridium is preferable.
  • the substituent represented by Z has the same meaning as the substituent described in the description of the general formula (1), preferably an aromatic hydrocarbon ring group or an aromatic heterocyclic group. is there.
  • examples of the aromatic hydrocarbon ring formed by A1 together with P—C include, for example, a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, Naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, Examples include a picene ring, a pyrene ring, a pyranthrene ring, and an anthraanthrene ring.
  • These rings may further have a substituent represented by Z.
  • examples of the aromatic heterocycle formed by A1 together with PC include a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, and a triazine.
  • the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
  • These rings may further have a substituent represented by Z.
  • bidentate ligand represented by P1-L1-P2 in the general formula (2) include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabol, acetylacetone, picolinic acid, and the like. Is mentioned.
  • J1 represents an integer of 1 to 3
  • j2 represents an integer of 0 to 2
  • j1 + j2 represents 2 or 3
  • j2 is preferably 0.
  • transition metal elements of groups 8 to 10 in the periodic table of elements represented by M1 (also simply referred to as transition metals) in the periodic table of elements represented by M1 in the general formula (1) Synonymous with group 8-10 transition metal elements.
  • One preferred embodiment of the compound represented by the general formula (2) is a compound represented by the general formula (3).
  • each of the substituents represented by R03, R04, R05, and R06 has the same meaning as the substituent represented by Z in the general formula (2).
  • examples of the 6-membered aromatic hydrocarbon ring formed by Z1 together with C—C include a benzene ring.
  • These rings may further have a substituent represented by Z in the general formula (2).
  • an oxazole ring for example, an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole And a ring, a thiatriazole ring, an isothiazole ring, a thiophene ring, a furan ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
  • These rings may further have a substituent represented by Z in the general formula (2).
  • the bidentate ligand represented by P1-L1-P2 has the same meaning as the bidentate ligand represented by P1-L1-P2 in the general formula (1). .
  • the transition metal elements of Group 8 to Group 10 in the periodic table of elements represented by M1 are the transition metal groups of Group 8 to Group 10 in the periodic table of elements represented by M1 in General Formula (1). Synonymous with metal element.
  • the bidentate ligand represented by P1-L1-P2 has the same meaning as the bidentate ligand represented by P1-L1-P2 in the general formula (1). .
  • the transition metal elements of groups 8 to 10 in the periodic table of elements represented by M1 are the transition metal groups of groups 8 to 10 in the periodic table of elements represented by M1 in the general formula (1). Synonymous with metal element.
  • the compound represented by any one of the general formulas (1), (2), (3) or (4) according to the present invention is Eur. J. et al. Chem. 2005, pages 1637-1643 and the like, or a halogen compound corresponding to a nitrogen-containing ring compound or an imidazole compound is reacted, or the corresponding amine and glyoxal and aldehyde described in SYNTHESIS 2003, 17, 2661-2666, etc. It can be synthesized with reference to the reaction of ammonium chloride with ammonium chloride.
  • complex B 7.5 g (0.009214 mol) and 2-phenyl- (2,4,6-trimethylphenyl) -1H-imidazole, 6.0 g (0.02287 mol) were suspended in 400 ml of glycerin. Made cloudy. The reaction was carried out at a reaction temperature of 150 to 160 ° C. for 2 hours under a nitrogen atmosphere, and when the disappearance of complex B was confirmed, the reaction was completed.
  • the reaction solution was cooled, 500 ml of methanol was added, and the precipitated crystals were collected by filtration.
  • the phosphorescence emission wavelength of the solution of Exemplified Compound D-26 measured using Hitachi F-4500 was 466 nm (in 2-methyltetrahydrofuran).
  • the light emitting layer unit has at least two light emitting layers, and has a non-light emitting intermediate layer between the light emitting layers. Also good.
  • the organic EL element of the present invention is preferably a white light emitting layer, and is preferably a lighting device using these.
  • the electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
  • the electron transport layer can be provided with a single layer or a plurality of layers.
  • the electron transport layer only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer.
  • any conventionally known compound may be selected and used in combination. Is possible.
  • electron transport materials examples include heterocyclic tetracarboxylic acid anhydrides such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Carbodiimide, fluorenylidenemethane derivative, anthraquinodimethane and anthrone derivative, oxadiazole derivative, carboline derivative, or at least one carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative is substituted with a nitrogen atom. And derivatives having a cyclic structure.
  • heterocyclic tetracarboxylic acid anhydrides such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Carbodiimide, fluorenylidenemethane derivative, anthraquinodimethane and anthro
  • a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as an electron transport material.
  • metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga or Pb can also be used as the electron transport material.
  • metal-free or metal phthalocyanine or those having terminal ends substituted with an alkyl group or a sulfonic acid group can also be used as the electron transport material.
  • inorganic semiconductors such as n-type-Si and n-type-SiC can also be used as the electron transport material.
  • the electron transport layer is made of an electron transport material such as a vacuum deposition method, a wet method (also referred to as a wet process, such as a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method, an ink jet method, a printing method, or a spraying method.
  • the film is preferably formed by thinning by a coating method, curtain coating method, LB method (Langmuir Brodgett method, etc.).
  • the film thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5000 nm, preferably 5 nm to 200 nm.
  • This electron transport layer may have a single layer structure composed of one or more of the above materials.
  • the light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
  • the organic EL device of the present invention has two or more light emitting layers, and may have any number of layers as long as it is two or more layers.
  • the total film thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the uniformity of the film, preventing unnecessary application of high voltage during light emission, and improving the stability of the emission color with respect to the drive current. It is preferable to adjust in the range of 2 nm to 5 ⁇ m, more preferably in the range of 2 nm to 200 nm, and particularly preferably in the range of 5 nm to 100 nm.
  • a light emitting dopant or host compound described later is used, for example, a vacuum deposition method, a wet method (also referred to as a wet process, for example, a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method, Examples thereof include an inkjet method, a printing method, a spray coating method, a curtain coating method, an LB method (Langmuir-Blodgett method) and the like.
  • a wet process also referred to as a wet process, for example, a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method
  • examples thereof include an inkjet method, a printing method, a spray coating method, a curtain coating method, an LB method (Langmuir-Blodgett method) and the like.
  • the light emitting layer of the organic EL device of the present invention contains a light emitting dopant (phosphorescent dopant (also referred to as phosphorescent dopant, phosphorescent dopant group) or fluorescent dopant) compound and a light emitting host compound. Is preferred.
  • a light emitting dopant phosphorescent dopant (also referred to as phosphorescent dopant, phosphorescent dopant group) or fluorescent dopant) compound and a light emitting host compound. Is preferred.
  • Luminescent dopant compound A light-emitting dopant compound (also referred to as a light-emitting dopant) will be described.
  • Fluorescent dopants also referred to as fluorescent compounds
  • phosphorescent dopants also referred to as phosphorescent emitters, phosphorescent compounds, phosphorescent compounds, etc.
  • the luminescent dopant can be used as the luminescent dopant.
  • Phosphorescent dopant also called phosphorescent dopant
  • the phosphorescent dopant according to the present invention will be described.
  • the phosphorescent dopant compound according to the present invention is a compound in which light emission from an excited triplet is observed, specifically, a compound that emits phosphorescence at room temperature (25 ° C.), and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.
  • the phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of the Fourth Edition Experimental Chemistry Course 7. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
  • the phosphorescent dopant There are two types of light emission of the phosphorescent dopant in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the luminescent host compound, and this energy is used as the phosphorescent dopant.
  • the energy transfer type is to obtain light emission from the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant compound occurs.
  • the excited state energy of the phosphorescent dopant is required to be lower than the excited state energy of the host compound.
  • At least one of the light-emitting layers contains a phosphorescent organometallic complex (also referred to as a phosphorescent dopant or a phosphorescent dopant).
  • a phosphorescent organometallic complex also referred to as a phosphorescent dopant or a phosphorescent dopant.
  • M1 represents a transition metal element of Group 8 to Group 10 in the periodic table. Of these, iridium is preferred.
  • the light-emitting layer according to the present invention may be used in combination with compounds described in the following patent publications.
  • fluorescent dopant also called fluorescent compound
  • fluorescent dopants include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes , Polythiophene dyes, rare earth complex phosphors, and the like, and compounds having a high fluorescence quantum yield such as laser dyes.
  • the light-emitting dopant according to the present invention may be used in combination of a plurality of compounds, and may be a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
  • the host compound has a mass ratio of 20% or more among the compounds contained in the light emitting layer, and a phosphorescence quantum yield of phosphorescence emission is 0 at room temperature (25 ° C.). Defined as less than 1 compound.
  • the phosphorescence quantum yield is preferably less than 0.01.
  • the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
  • the light-emitting host that can be used in the present invention is not particularly limited, and compounds conventionally used in organic EL devices can be used.
  • a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from becoming longer wavelength, and has a high Tg (glass transition temperature) is preferable.
  • the light-emitting host of the present invention may be used alone or in combination of two or more.
  • the light emitting host used in the present invention may be a low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (polymerizable light emitting host). Of course, one or more of such compounds may be used.
  • any one of the light emitting layers contains a light emitting host represented by the following general formula (5).
  • X represents O, S or NR46.
  • Y4 represents an alkyl group, an alkoxy group, an aryl group, a heteroaryl group, an aryloxy group, an aralkyl group, an alkenyl group, an alkylamino group, an aralkylamino group, an alkylsilyl group, an arylsilyl group or a halogenated alkyl group.
  • an aryl group or a heteroaryl group is more preferable.
  • R41 to R46 each represents a hydrogen atom, a halogen atom or a substituent.
  • substituent represented by R41 to R46 include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group).
  • aromatic hydrocarbon ring group also called aromatic hydrocarbon ring group, aromatic carbocyclic group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, Acenaphthenyl, fluorenyl, phenanthryl, indenyl, pyrenyl, bif Nitryl group, etc.), aromatic heterocyclic groups (for example, pyridyl group, pyrimidinyl group, furyl group
  • Ureido group for example, methylureido group, ethylureido group, pentylureido group, cyclohexylureido group, octylureido group, dodecylureido group, phenylureido group, naphthylureido group, 2-pyridylaminoureido group), sulfinyl group (for example, Methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group Group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc.), alkylsulfonyl
  • substituents and Y4 may be further substituted with the above substituents.
  • a plurality of these substituents may be bonded to each other to form a ring.
  • X represents O or S.
  • Y5, Y51 and Y52 are each an alkyl group, alkoxy group, aryl group, heteroaryl group, aryloxy group, aralkyl group, alkenyl group, alkylamino group, aralkylamino group, alkylsilyl group, arylsilyl group or alkyl halide Represents a group.
  • an aryl group or a heteroaryl group is more preferable.
  • N51 and n52 represent 0 or an integer of 1 to 2, and n51 + n52 is 0 to 3.
  • Y5, Y51, and Y52 may be substituted with the above-described substituents.
  • a plurality of these substituents may be bonded to each other to form a ring.
  • the compound represented by the general formula (4) or (5) preferably contains at least one carbazolyl group from the viewpoint of carrier transportability.
  • cathode a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used.
  • electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.
  • a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
  • the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
  • the sheet resistance as the cathode is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 nm to 200 nm.
  • the light emission luminance is improved, which is convenient.
  • a transparent or semi-transparent cathode can be produced by producing the conductive transparent material mentioned in the description of the anode on the cathode after producing the metal with a film thickness of 1 nm to 20 nm. By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
  • Injection layer electron injection layer (cathode buffer layer), hole injection layer >> The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer. May be.
  • An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance.
  • Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) ) ”, Chapter 2,“ Electrode Materials ”(pages 123 to 166), which has a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
  • anode buffer layer hole injection layer
  • copper phthalocyanine is used.
  • examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
  • cathode buffer layer (electron injection layer) The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc.
  • Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc.
  • the buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 ⁇ m, although it depends on the material.
  • the above-described cathode or a constituent layer in contact with the cathode is an element belonging to Group 1 or Group 2 of the periodic table
  • the standard electrode potential of the elemental metal ion (M n + ) / metal (M) system is ⁇ 3 Vvs. It is characterized by containing a metal or metal compound of an element larger than SHE.
  • the standard electrode potential E ° of the M n + / M system is an electrode potential with respect to the standard hydrogen electrode in an aqueous solution having a temperature of 25 ° C. and an solute activity of all 1.
  • “Revision No. 3 You can refer to the values in Tables 12 and 46, page II-474 of “Chemical Handbook Basic Edition II” (The Chemical Society of Japan).
  • the element belongs to Group 1 or Group 2 of the periodic table, and the standard electrode potential of the metal ion (M n + ) / metal (M) system of the element is ⁇ 3 Vvs.
  • the elements constituting the metal or metal compound of an element larger than SHE include K (-2.925 (V)), Ca (-2.840 (V)), Na (-2.714). (V)), Mg (-2.356 (V)) and the like.
  • ⁇ Blocking layer hole blocking layer, electron blocking layer>
  • the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
  • the hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking.
  • the structure of the electron transport layer described later can be used as a hole blocking layer according to the present invention, if necessary.
  • the hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
  • the hole blocking layer includes a carbazole derivative, a carboline derivative, a diazacarbazole derivative (herein, a diazacarbazole derivative is a nitrogen atom in which any one of carbon atoms constituting the carboline ring) It is preferable to contain (represented by).
  • the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers.
  • 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more larger than the host compound of the shortest wave emitting layer.
  • the ionization potential is defined by the energy required to emit electrons at the HOMO (highest occupied orbital) level of the compound to the vacuum level, and can be determined by, for example, the following method.
  • Gaussian 98 Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.
  • eV unit converted value As a value (eV unit converted value) calculated by performing structure optimization using B3LYP / 6-31G *. The reason why this calculated value is effective is that there is a high correlation between the calculated value obtained by this method and the experimental value.
  • the ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy.
  • a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd. or a method known as ultraviolet photoelectron spectroscopy can be suitably used.
  • the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved.
  • the structure of the hole transport layer described later can be used as an electron blocking layer as necessary.
  • the film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
  • the hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer.
  • the hole transport layer can be provided as a single layer or a plurality of layers.
  • the hole transport material has either hole injection or transport or electron barrier properties, and may be either organic or inorganic.
  • triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
  • Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
  • the above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
  • aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
  • No. 5,061,569 Having a condensed aromatic ring of, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-308 4,4 ′, 4 ′′ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the like.
  • NPD 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl
  • JP-A-4-308 4,4 ′, 4 ′′ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the
  • a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
  • inorganic compounds such as p-type-Si and p-type-SiC can be used as the hole injection material and the hole transport material.
  • JP-A-11-251067 J. Org. Huang et. al.
  • a so-called p-type hole transport material described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used.
  • these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
  • the hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can.
  • the film thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
  • the hole transport layer may have a single layer structure composed of one or more of the above materials.
  • a hole transport layer having a high p property doped with impurities examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
  • a hole transport layer having such a high p property because a device with lower power consumption can be produced.
  • an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used.
  • electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
  • an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used.
  • these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when pattern accuracy is not required (about 100 ⁇ m or more)
  • a pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
  • a wet film forming method such as a printing method or a coating method can be used.
  • the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred ⁇ / ⁇ or less.
  • the film thickness depends on the material, it is usually selected in the range of 10 nm to 1000 nm, preferably 10 nm to 200 nm.
  • a support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc., and it is transparent. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
  • polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfone , Polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylates, cyclone resins such as Arton (trade name, manufactured by JSR) or Appel (trade
  • an inorganic film, an organic film or a hybrid film of both may be formed on the surface of the resin film.
  • the water vapor permeability (25 ⁇ 0.5 ° C.) measured by a method according to JIS K 7129-1992. , Relative humidity (90 ⁇ 2)% RH) is preferably 0.01 g / (m 2 ⁇ 24 h) or less, and further, oxygen measured by a method according to JIS K 7126-1987.
  • a high barrier film having a permeability of 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less and a water vapor permeability of 10 ⁇ 5 g / (m 2 ⁇ 24 h) or less is preferable.
  • the material for forming the barrier film may be any material that has a function of suppressing the intrusion of elements that cause deterioration of elements such as moisture and oxygen.
  • silicon oxide, silicon dioxide, silicon nitride, or the like can be used.
  • the method for forming the barrier film is not particularly limited.
  • the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma weight A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
  • the opaque support substrate examples include metal plates such as aluminum and stainless steel, films, opaque resin substrates, ceramic substrates, and the like.
  • the external extraction efficiency at room temperature of light emission of the organic EL element of the present invention is preferably 1% or more, more preferably 5% or more.
  • the external extraction quantum efficiency (%) the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element ⁇ 100.
  • a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination.
  • the ⁇ max of light emission of the organic EL element is preferably 480 nm or less.
  • a thin film made of a desired electrode material for example, a material for an anode is formed on a suitable substrate so as to have a thickness of 1 ⁇ m or less, preferably 10 nm to 200 nm, thereby producing an anode.
  • a thin film containing an organic compound such as a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, and a cathode buffer layer, which are element materials, is formed thereon.
  • the phosphorescent organic EL device of the present invention at least two light emitting layers are applied and formed by a wet method.
  • Wet methods include spin coating, casting, die coating, blade coating, roll coating, ink jet, printing, spray coating, curtain coating, and LB, but precise thin films can be formed.
  • a method having high suitability for a roll-to-roll method such as a die coating method, a roll coating method, an ink jet method, or a spray coating method is preferable. Different film formation methods may be applied for each layer.
  • liquid medium for dissolving or dispersing the organic EL material according to the present invention examples include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene.
  • ketones such as methyl ethyl ketone and cyclohexanone
  • fatty acid esters such as ethyl acetate
  • halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene.
  • Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane
  • organic solvents such as DMF and DMSO
  • a dispersion method it can be dispersed by a dispersion method such as ultrasonic wave, high shearing force dispersion or media dispersion.
  • a thin film made of a cathode material is formed thereon so as to have a thickness of 1 ⁇ m or less, preferably in the range of 50 to 200 nm, and a desired organic EL device can be obtained by providing a cathode. .
  • the cathode, cathode buffer layer, electron transport layer, hole blocking layer, light emitting layer, hole transport layer, hole injection layer, and anode can be formed in the reverse order.
  • a DC voltage When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 V to 40 V with the anode being + and the cathode being ⁇ 0210.
  • An alternating voltage may be applied.
  • the alternating current waveform to be applied may be arbitrary.
  • ⁇ Sealing> As a sealing means used for this invention, the method of adhere
  • the sealing member may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape. Further, transparency and electrical insulation are not particularly limited.
  • Specific examples include a glass plate, a polymer plate / film, and a metal plate / film.
  • the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
  • examples of the polymer plate include those formed from polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, polysulfone and the like.
  • the metal plate examples include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
  • a polymer film and a metal film can be preferably used because the element can be thinned.
  • the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less, and a method according to JIS K 7129-1992. It is preferable that the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) measured in (1) is 1 ⁇ 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less.
  • sealing member For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
  • the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to.
  • hot-melt type polyamide, polyester, and polyolefin can be mentioned.
  • a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
  • an organic EL element may deteriorate by heat processing, what can be adhesively cured from room temperature to 80 ° C. is preferable.
  • a desiccant may be dispersed in the adhesive.
  • coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
  • the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film.
  • the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
  • silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
  • the method for forming these films is not particularly limited.
  • a polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
  • an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase.
  • an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil
  • a vacuum is also possible.
  • a hygroscopic compound can also be enclosed inside.
  • Examples of the hygroscopic compound include metal oxides (eg, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide), sulfates (eg, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
  • metal oxides eg, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide
  • sulfates eg, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt
  • a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or on the sealing film.
  • the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate.
  • the same glass plate, polymer plate / film, metal plate / film, and the like used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
  • the organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because the light incident on the interface (interface between the transparent substrate and air) at an angle ⁇ greater than the critical angle causes total reflection and cannot be taken out of the element, or between the transparent electrode or the light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
  • a method of improving the light extraction efficiency for example, a method of forming irregularities on the surface of the transparent substrate and preventing total reflection at the transparent substrate and the air interface (US Pat. No. 4,774,435), A method for improving efficiency by giving light condensing property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on the side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from the substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No.
  • these methods can be used in combination with the organic EL device of the present invention.
  • a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
  • the low refractive index layer examples include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
  • the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
  • the method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency.
  • This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction.
  • Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating in any layer or medium (in a transparent substrate or transparent electrode), and the light is removed. I want to take it out.
  • the diffraction grating to be introduced has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much.
  • the refractive index distribution a two-dimensional distribution
  • the light traveling in all directions is diffracted, and the light extraction efficiency is increased.
  • the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
  • the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
  • the arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
  • the organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the light emitting surface By condensing in the front direction, the luminance in a specific direction can be increased.
  • quadrangular pyramids having a side of 30 ⁇ m and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate.
  • One side is preferably 10 ⁇ m to 100 ⁇ m. If it becomes smaller than this, the effect of diffraction will generate
  • the condensing sheet it is possible to use, for example, a sheet that has been put to practical use in an LED backlight of a liquid crystal display device.
  • a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used.
  • the base material may be formed by forming a ⁇ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 ⁇ m, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
  • a light diffusion plate / film may be used in combination with the light collecting sheet.
  • a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
  • the organic EL element of the present invention can be used as a display device, a display, and various light emission sources.
  • lighting devices home lighting, interior lighting
  • clock and liquid crystal backlights billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light
  • the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
  • patterning may be performed by a metal mask, an ink jet printing method, or the like during film formation, if necessary.
  • patterning only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned.
  • a conventionally known method is used. Can do.
  • the light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on page 108 of “New Color Science Handbook” (Edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with a total of CS-1000 (manufactured by Konica Minolta Sensing Co., Ltd.) is applied to the CIE chromaticity coordinates.
  • the display device of the present invention comprises the organic EL element of the present invention.
  • the display device of the present invention may be monochromatic or multicolor, but here, the multicolor display device will be described.
  • a shadow mask is provided only at the time of forming a light emitting layer, and a film can be formed on one surface by vapor deposition, casting, spin coating, ink jet, printing, or the like.
  • the method is not limited, but is preferably a vapor deposition method, an ink jet method, a spin coating method, or a printing method.
  • the configuration of the organic EL element included in the display device is selected from the above-described configuration examples of the organic EL element as necessary.
  • the manufacturing method of an organic EL element is as having shown in the one aspect
  • a DC voltage When a DC voltage is applied to the obtained multicolor display device, light emission can be observed by applying a voltage of about 2V to 40V with the positive polarity of the anode and the negative polarity of the cathode. Further, even when a voltage is applied with the opposite polarity, no current flows and no light emission occurs. Further, when an AC voltage is applied, light is emitted only when the anode is in the + state and the cathode is in the-state.
  • the alternating current waveform to be applied may be arbitrary.
  • the multicolor display device can be used as a display device, a display, and various light sources.
  • a display device or display full-color display is possible by using three types of organic EL elements of blue, red, and green light emission.
  • Display devices and displays include televisions, personal computers, mobile devices, AV devices, teletext displays, information displays in automobiles, and the like. In particular, it may be used as a display device for reproducing still images and moving images, and the driving method when used as a display device for reproducing moving images may be either a simple matrix (passive matrix) method or an active matrix method.
  • Light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, light sources for optical sensors, etc.
  • the present invention is not limited to these examples.
  • FIG. 1 is a schematic view showing an example of a display device composed of organic EL elements. It is a schematic diagram of a display such as a mobile phone that displays image information by light emission of an organic EL element.
  • the display 1 includes a display unit A having a plurality of pixels, a control unit B that performs image scanning of the display unit A based on image information, and the like.
  • the control unit B is electrically connected to the display unit A, and sends a scanning signal and an image data signal to each of a plurality of pixels based on image information from the outside, and the pixels for each scanning line respond to the image data signal by the scanning signal.
  • the image information is sequentially emitted to scan the image and display the image information on the display unit A.
  • FIG. 2 is a schematic diagram of the display unit A.
  • the display unit A has a wiring unit including a plurality of scanning lines 5 and data lines 6 and a plurality of pixels 3 on the substrate.
  • the main members of the display unit A will be described below.
  • the light emitted from the pixel 3 is extracted in the direction of the white arrow (downward).
  • the scanning line 5 and the plurality of data lines 6 in the wiring portion are each made of a conductive material, and the scanning lines 5 and the data lines 6 are orthogonal to each other in a grid pattern and are connected to the pixels 3 at the orthogonal positions (details are illustrated). Not)
  • the pixel 3 When the scanning signal is applied from the scanning line 5, the pixel 3 receives the image data signal from the data line 6 and emits light according to the received image data.
  • a full color display can be achieved by appropriately arranging pixels in the red region, the green region, and the blue region on the same substrate.
  • FIG. 3 is a schematic diagram of a pixel.
  • the pixel includes an organic EL element 10, a switching transistor 11, a driving transistor 12, a capacitor 13, and the like.
  • a full color display can be performed by using red, green, and blue light emitting organic EL elements as the organic EL elements 10 in a plurality of pixels, and juxtaposing them on the same substrate.
  • an image data signal is applied from the control unit B to the drain of the switching transistor 11 via the data line 6.
  • a scanning signal is applied from the control unit B to the gate of the switching transistor 11 via the scanning line 5
  • the driving of the switching transistor 11 is turned on, and the image data signal applied to the drain is supplied to the capacitor 13 and the driving transistor 12. Is transmitted to the gate.
  • the capacitor 13 is charged according to the potential of the image data signal, and the drive transistor 12 is turned on.
  • the drive transistor 12 has a drain connected to the power supply line 7 and a source connected to the electrode of the organic EL element 10, and the power supply line 7 connects to the organic EL element 10 according to the potential of the image data signal applied to the gate. Current is supplied.
  • the driving of the switching transistor 11 is turned off. However, even if the driving of the switching transistor 11 is turned off, the capacitor 13 maintains the potential of the charged image data signal, so that the driving of the driving transistor 12 is kept on and the next scanning signal is applied. Until then, the light emission of the organic EL element 10 continues.
  • the driving transistor 12 is driven according to the potential of the next image data signal synchronized with the scanning signal, and the organic EL element 10 emits light.
  • the light emission of the organic EL element 10 is performed by providing the switching transistor 11 and the drive transistor 12 which are active elements with respect to the organic EL element 10 of each of the plurality of pixels. It is carried out.
  • Such a light emitting method is called an active matrix method.
  • the light emission of the organic EL element 10 may be light emission of a plurality of gradations by a multi-value image data signal having a plurality of gradation potentials, or by turning on / off a predetermined light emission amount by a binary image data signal. Good.
  • the potential of the capacitor 13 may be held continuously until the next scanning signal is applied, or may be discharged immediately before the next scanning signal is applied.
  • the present invention not only the active matrix method described above, but also a passive matrix light emission drive in which an organic EL element emits light according to a data signal only when a scanning signal is scanned.
  • FIG. 4 is a schematic view of a passive matrix display device.
  • a plurality of scanning lines 5 and a plurality of image data lines 6 are provided in a lattice shape so as to face each other with the pixel 3 interposed therebetween.
  • the pixel 3 connected to the applied scanning line 5 emits light according to the image data signal.
  • the lighting device of the present invention will be described.
  • the illuminating device of this invention has the said organic EL element.
  • the organic EL element of the present invention may be used as an organic EL element having a resonator structure.
  • the purpose of use of the organic EL element having such a resonator structure is as follows.
  • the light source of a machine, the light source of an optical communication processing machine, the light source of a photosensor, etc. are mentioned, However, It is not limited to these. Moreover, you may use for the said use by making a laser oscillation.
  • the organic EL element of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a display for directly viewing a still image or a moving image. It may be used as a device (display).
  • the drive method when used as a display device for moving image reproduction may be either a simple matrix (passive matrix) method or an active matrix method.
  • a full-color display device can be manufactured by using two or more organic EL elements of the present invention having different emission colors.
  • the organic EL material of the present invention can be applied to an organic EL element that emits substantially white light as a lighting device.
  • a plurality of light emitting colors are simultaneously emitted by a plurality of light emitting materials to obtain white light emission by color mixing.
  • the combination of a plurality of emission colors may include three emission maximum wavelengths of the three primary colors of blue, green, and blue, or two using the relationship of complementary colors such as blue and yellow, blue green and orange, etc. The thing containing the light emission maximum wavelength may be used.
  • a combination of light emitting materials for obtaining a plurality of emission colors is a combination of a plurality of phosphorescent or fluorescent materials, a light emitting material that emits fluorescence or phosphorescence, and light from the light emitting material as excitation light. Any of those combined with a dye material that emits light may be used, but in the white organic EL device according to the present invention, only a combination of a plurality of light-emitting dopants may be mixed.
  • an electrode film can be formed by a vapor deposition method, a cast method, a spin coating method, an ink jet method, a printing method, or the like, and productivity is also improved.
  • the elements themselves are luminescent white.
  • luminescent material used for a light emitting layer For example, if it is a backlight in a liquid crystal display element, the metal complex which concerns on this invention so that it may suit the wavelength range corresponding to CF (color filter) characteristic, Any one of known luminescent materials may be selected and combined to whiten.
  • CF color filter
  • the non-light emitting surface of the organic EL device of the present invention is covered with a glass case, a glass substrate having a thickness of 300 ⁇ m is used as a sealing substrate, and an epoxy-based photocurable adhesive (LUX TRACK manufactured by Toagosei Co., Ltd.) is used as a sealing material.
  • LC0629B is applied, and this is overlaid on the cathode and brought into close contact with the transparent support substrate, irradiated with UV light from the glass substrate side, cured and sealed, and an illumination device as shown in FIGS. Can be formed.
  • FIG. 5 shows a schematic diagram of a lighting device, and the organic EL element 101 of the present invention is covered with a glass cover 102 (in the sealing operation with the glass cover, the organic EL element 101 is brought into contact with the atmosphere. And a glove box under a nitrogen atmosphere (in an atmosphere of high-purity nitrogen gas having a purity of 99.999% or more).
  • FIG. 6 shows a cross-sectional view of the lighting device.
  • 105 denotes a cathode
  • 106 denotes an organic EL layer
  • 107 denotes a glass substrate with a transparent electrode.
  • the glass cover 102 is filled with nitrogen gas 108 and a water catching agent 109 is provided.
  • Example 1 Production of Organic EL Element 1-1 >> Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm ⁇ 100 mm ⁇ 1.1 mm glass substrate as a positive electrode on a 100 mm ⁇ 100 mm ⁇ 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided.
  • the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • This substrate was transferred to a nitrogen atmosphere, and a solution in which 50 mg of HT-26 was dissolved in 10 ml of toluene was spin-coated on the hole transport layer at 1000 rpm for 30 seconds to form a thin film on the hole transport layer. did.
  • ultraviolet light was irradiated for 180 seconds to carry out photopolymerization / crosslinking to form a second hole transport layer having a film thickness of about 25 nm.
  • ultraviolet light was irradiated for 15 seconds while heating at 100 ° C. to cause photopolymerization / crosslinking, and further heating was performed at 150 ° C. for 30 minutes in a vacuum to obtain a light emitting layer having a film thickness of about 50 nm.
  • a thin film was formed on this light emitting layer by spin coating using a solution obtained by dissolving 50 mg of ET-3 in 10 ml of hexafluoroisopropanol (HFIP) at 1000 rpm for 30 seconds. Furthermore, it vacuum-dried at 60 degreeC for 1 hour, and was set as the electron carrying layer with a film thickness of about 30 nm.
  • HFIP hexafluoroisopropanol
  • this substrate was fixed to a substrate holder of a vacuum deposition apparatus, the vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, lithium fluoride 0.4 nm was deposited as a cathode buffer layer, and aluminum was deposited 110 nm as a cathode. Thus, a cathode was formed, and an organic EL element 1-1 was produced.
  • ultraviolet light was irradiated for 15 seconds while heating at 100 ° C. to cause photopolymerization / crosslinking, followed by heating at 150 ° C. for 1 hour in a vacuum to obtain a first light emitting layer having a thickness of about 20 nm.
  • ultraviolet light was irradiated for 15 seconds while heating at 100 ° C., photopolymerization and crosslinking were performed, and heating was performed in vacuum at 150 ° C. for 1 hour to obtain a second light emitting layer having a thickness of about 30 nm.
  • an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 1-1 to produce an organic EL element 1-2.
  • the organic EL element was evaluated as follows.
  • the organic EL device is allowed to emit light at room temperature (about 23 ° C. to 25 ° C.) under a constant current condition of 2.5 mA / cm 2 , and the light emission luminance (L) [cd / m 2 ] immediately after the start of light emission is measured.
  • the external extraction quantum efficiency ( ⁇ ) was calculated.
  • CS-1000 manufactured by Konica Minolta Sensing
  • the external extraction quantum efficiency was expressed as a relative value where the organic EL element 1-1 was 100.
  • the device of the present invention has a high external extraction quantum efficiency and a low driving voltage as compared with the comparative device.
  • Example 2 ⁇ Preparation of organic EL element 2-1 >> Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm ⁇ 100 mm ⁇ 1.1 mm glass substrate as a positive electrode on a 100 mm ⁇ 100 mm ⁇ 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided.
  • the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • the substrate was transferred to a nitrogen atmosphere, and a mixed solution prepared by dissolving 5 mg of the hole transport material 3 and 45 mg of the hole transport material 4 in 10 ml of toluene on the hole transport layer was used at 1000 rpm for 30 seconds.
  • a thin film was formed by spin coating on the hole transport layer.
  • ultraviolet light was irradiated for 180 seconds to carry out photopolymerization / crosslinking to form a second hole transport layer having a film thickness of about 25 nm.
  • This substrate was fixed to a substrate holder of a vacuum deposition apparatus, and the vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then ET-8 was deposited to a thickness of 20 nm on the first light emitting layer to form a first electron transport layer. .
  • first light emitting layer having a thickness of about 20 nm.
  • a film obtained by dissolving 100 mg Host-14 and 10 mg D-25 in 10 ml ethyl acetate on this first light emitting layer by spin coating at 2500 rpm for 30 seconds was used to form a second light emitting layer. A layer was formed.
  • an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 2-1, and an organic EL element 2-2 was produced.
  • the organic EL device continuously emitted light at room temperature under a constant current condition of 2.5 mA / cm 2 , and the time ( ⁇ 1/2 ) required to reach half the initial luminance was measured.
  • the light emission lifetime was expressed as a relative value at which the organic EL element 2-1 was set to 100.
  • the device of the present invention has a high external extraction quantum efficiency, a low driving voltage, and a long life compared to the comparative device.
  • Example 3 Preparation of organic EL element 3-1 >> Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm ⁇ 100 mm ⁇ 1.1 mm glass substrate as a positive electrode on a 100 mm ⁇ 100 mm ⁇ 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided.
  • the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • This substrate was transferred to a nitrogen atmosphere, and a solution obtained by dissolving 50 mg of ADS254BE (American Dye Source) in 10 ml of toluene was spin-coated on the hole transport layer at 1000 rpm for 30 seconds on the hole transport layer. Then, a thin film was formed, and further heated in a vacuum at 60 ° C. for 1 hour to obtain a second hole transport layer having a thickness of about 25 nm.
  • ADS254BE American Dye Source
  • a solution prepared by dissolving 100 mg Host-25, 5 mg D-9 and 5 mg D-25 in 10 ml toluene was formed by spin coating at 1000 rpm for 30 seconds.
  • the film was further heated in a vacuum at 100 ° C. for 1 hour to obtain a light-emitting layer having a thickness of about 50 nm.
  • This substrate was fixed to a substrate holder of a vacuum deposition apparatus, and the vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then the electron transporting material 3 was 30 nm on the light emitting layer, and then lithium fluoride was 0 as a cathode buffer layer.
  • An organic EL element 3-1 was fabricated by depositing aluminum at 110 nm as a cathode and depositing 110 nm of aluminum as the cathode.
  • a film obtained by dissolving 100 mg Host-16 and 10 mg D-25 in 40 ml hexafluoroisopropanol (HFIP) is formed on the first light-emitting layer by spin coating at 1000 rpm for 30 seconds. And it vacuum-dried at 60 degreeC for 1 hour, and formed the 2nd light emitting layer.
  • HFIP hexafluoroisopropanol
  • an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 3-1, and an organic EL element 3-2 was produced.
  • organic EL elements 3-3 and 3-4 were respectively produced in the same manner except that the combination of materials was changed as shown in Table 3.
  • the device of the present invention has a high external extraction quantum efficiency, a low driving voltage, and a long life compared to the comparative device.
  • Example 4 Preparation of organic EL element 4-1 >> Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm ⁇ 100 mm ⁇ 1.1 mm glass substrate as a positive electrode on a 100 mm ⁇ 100 mm ⁇ 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided.
  • the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • This substrate was transferred to a nitrogen atmosphere, and a solution in which 100 mg of HT-29 was dissolved in 10 ml of toluene was spin-coated on the hole transport layer at 3000 rpm for 30 seconds on the hole transport layer to form a thin film. did.
  • ultraviolet light was irradiated for 180 seconds to carry out photopolymerization / crosslinking to form a second hole transport layer.
  • ultraviolet light was irradiated for 15 seconds while heating at 100 ° C. to cause photopolymerization / crosslinking, and further heating was performed at 150 ° C. for 30 minutes in a vacuum to obtain a light emitting layer having a film thickness of about 60 nm.
  • a thin film was formed on the light emitting layer by spin coating using a solution obtained by dissolving 50 mg of ET-10 in 10 ml of hexafluoroisopropanol (HFIP) at 1000 rpm for 30 seconds. Furthermore, it vacuum-dried at 60 degreeC for 1 hour, and was set as the electron carrying layer with a film thickness of about 30 nm.
  • HFIP hexafluoroisopropanol
  • this substrate was fixed to a substrate holder of a vacuum deposition apparatus, the vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, lithium fluoride 0.4 nm was deposited as a cathode buffer layer, and aluminum was deposited 110 nm as a cathode.
  • a cathode was formed to produce an organic EL element 4-1.
  • a film similar to the solution used for forming the light emitting layer in the organic EL element 4-1 was used on this second hole transport layer, and the film was formed by spin coating at 3000 rpm for 30 seconds. While being heated at 100 ° C., ultraviolet light was irradiated for 15 seconds to cause photopolymerization / crosslinking, and further heating was performed in vacuum at 150 ° C. for 30 minutes to obtain a first light emitting layer having a thickness of about 30 nm.
  • a film was formed on the first light emitting layer by spin coating at 3000 rpm for 30 seconds, and irradiated with ultraviolet light for 15 seconds while heating at 100 ° C. to perform photopolymerization and crosslinking. Further, heating was performed at 150 ° C. for 30 minutes in a vacuum to obtain a second light emitting layer having a thickness of about 30 nm.
  • an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 4-1, and an organic EL element 4-2 was produced.
  • the organic EL element was evaluated as follows.
  • the organic EL device is allowed to emit light at room temperature (about 23 ° C. to 25 ° C.) under a constant current condition of 2.5 mA / cm 2 , and the light emission luminance (L) [cd / m 2 ] immediately after the start of light emission is measured.
  • the external extraction quantum efficiency ( ⁇ ) was calculated.
  • CS-1000 manufactured by Konica Minolta Sensing
  • the external extraction quantum efficiency was expressed as a relative value where the organic EL element 4-1 was 100.
  • the device of the present invention has a high external extraction quantum efficiency and a low driving voltage compared to the comparative device.
  • Example 5 Preparation of organic EL element 5-1 >> Transparent support provided with this ITO transparent electrode after patterning on a substrate (NH45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a glass substrate of 100 mm ⁇ 100 mm ⁇ 1.1 mm as an anode The substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • a substrate NH45 manufactured by NH Techno Glass Co., Ltd.
  • ITO indium tin oxide
  • This substrate was transferred to a nitrogen atmosphere, and a solution prepared by dissolving 50 mg of the hole transport material 2 in 10 ml of toluene was formed on the first hole transport layer by spin coating at 1000 rpm for 30 seconds. After irradiating with ultraviolet light for 180 seconds to perform photopolymerization / crosslinking, vacuum drying was performed at 60 ° C. for 1 hour to form a second hole transport layer.
  • a solution obtained by dissolving Host-18 (60 mg), D-1 (3.0 mg) and D-10 (2.0 mg) in 6 ml of toluene was prepared by spin coating under the condition of 2000 rpm and 30 seconds. Filmed. The first light emitting layer was formed by vacuum drying at 60 ° C. for 1 hour.
  • this first light emitting layer a solution in which Host-9 (60 mg) and D-26 (6.0 mg) were dissolved in 6 ml of hexafluoroisopropanol (HFIP) was used, and spin coating was performed at 2000 rpm for 30 seconds. was formed into a film and vacuum-dried at 60 ° C. for 1 hour to form a second light emitting layer.
  • HFIP hexafluoroisopropanol
  • This substrate is fixed to a substrate holder of a vacuum evaporation apparatus, and the vacuum chamber is depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then the electron transport material 4 is 30 nm on the second light emitting layer, and then lithium fluoride as a cathode buffer layer.
  • the organic EL element 5-1 was manufactured by depositing aluminum with a thickness of 0.5 nm and further depositing aluminum with a thickness of 110 nm as a cathode.

Abstract

Disclosed is an organic electroluminescent element which has high external quantum efficiency, low driving voltage and long life.  Also disclosed are an illuminating device and a display device, each comprising the element. In the organic electroluminescent element, and the illuminating device and the display device each comprising the element, a plurality of constituent layers including two or more light-emitting layers are interposed between a positive electrode and a negative electrode, and at least two light-emitting layers are produced by a procedure including a wet process.

Description

有機エレクトロルミネッセンス素子、該素子を備えた照明装置及び表示装置ORGANIC ELECTROLUMINESCENCE ELEMENT, LIGHTING DEVICE AND DISPLAY DEVICE PROVIDED WITH THE ELEMENT
 本発明は、有機エレクトロルミネッセンス素子、該素子を備えた照明装置及び表示装置に関する。 The present invention relates to an organic electroluminescence element, a lighting device and a display device including the element.
 従来、発光型の電子ディスプレイデバイスとして、エレクトロルミネッセンスディスプレイ(ELD)がある。ELDの構成要素としては、無機エレクトロルミネッセンス素子や有機エレクトロルミネッセンス素子が挙げられる。向きエレクトロルミネッセンス素子は平面型光源として使用されてきたが、発光素子を駆動させるためには交流の高電圧が必要である。 Conventionally, as a light-emitting electronic display device, there is an electroluminescence display (ELD). As a component of ELD, an inorganic electroluminescent element and an organic electroluminescent element are mentioned. Oriented electroluminescent elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements.
 一方、有機エレクトロルミネッセンス素子(有機EL素子)は、蛍光性もしくはリン光性の有機化合物を含む薄膜を陰極と陽極で挟んだ構成を有し、前記薄膜に電子および正孔を注入して再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・リン光)を利用して発光する素子であり、数V~数十V程度の低電圧で発光が可能であり、自己発光型であるために視野角依存性に富み、視認性が高く、更には薄膜型の完全固体素子であるために省スペース等の観点から注目され、実用化研究への展開が開始されている。 On the other hand, an organic electroluminescence element (organic EL element) has a structure in which a thin film containing a fluorescent or phosphorescent organic compound is sandwiched between a cathode and an anode, and recombines by injecting electrons and holes into the thin film. Is an element that emits light by utilizing the emission of light (fluorescence / phosphorescence) when the exciton is deactivated by generating excitons, and at a low voltage of several to several tens of volts. Since it is capable of emitting light and is self-luminous, it has a wide viewing angle dependency, high visibility, and because it is a thin-film, completely solid element, it has attracted attention from the viewpoint of space saving, etc. Deployment has begun.
 実用化に向けた有機EL素子の開発としては、M.A.Baldo et al.,Nature、395巻、151~154頁(1998年)により、プリンストン大より、励起三重項からのリン光発光を用いる有機EL素子の報告がされて以来、M.A.Baldo et al.,Nature、403巻、17号、750~753頁(2000年)、米国特許第6,097,147号明細書により、室温でリン光を示す材料の研究が活発になってきている。 Developed organic EL elements for practical use A. Baldo et al. Since 1993, Nature, 395, 151-154 (1998), Princeton University has reported an organic EL device using phosphorescence emission from an excited triplet. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), and US Pat. No. 6,097,147, research on materials that exhibit phosphorescence at room temperature has become active.
 更に、最近発見されたリン光発光を利用する有機EL素子では、以前の蛍光発光を利用する素子に比べ原理的に約4倍の発光効率が実現可能であることから、その材料開発を初めとし、発光素子の層構成や電極の研究開発が世界中で行われている。例えば、S.Lamansky et al.,J.Am.Chem.Soc.,123巻、4304頁(2001年)には、多くの化合物がイリジウム錯体系等重金属錯体を中心に合成検討がなされている。 In addition, recently discovered organic EL devices that use phosphorescence can realize a luminous efficiency that is approximately four times that of previous devices that use fluorescence. Research and development of light-emitting element layer configurations and electrodes are performed all over the world. For example, S.M. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), a number of compounds have been studied for synthesis centering on heavy metal complexes such as iridium complexes.
 通常、有機EL素子は10-4Pa以下というような高真空を用いた真空蒸着法で有機層を形成している(ドライプロセス)が、今後、有機EL素子の大型化や大量生産される可能性を考えると、真空蒸着法による有機層の形成は生産効率及び製造コストの面で好ましくない。 Usually, organic EL elements are formed by an organic vapor deposition method using a high vacuum such as 10 −4 Pa or less (dry process). However, organic EL elements can be increased in size and mass-produced in the future. Considering the properties, the formation of the organic layer by the vacuum deposition method is not preferable in terms of production efficiency and manufacturing cost.
 また、ドーパントを真空蒸着法により発光層に含有させる場合には、蒸着の際に基板上でドーパントのムラが生じてしまい、これが発色光のムラの原因となり品質を低下させてしまう問題がある。これは有機EL素子を大型化する場合にはより顕著な問題となる。さらに、複数のドーパントを含有させる場合には、技術的にも困難となる。 Further, when the dopant is contained in the light emitting layer by the vacuum vapor deposition method, the dopant is uneven on the substrate during the vapor deposition, which causes the unevenness of the colored light and lowers the quality. This becomes a more prominent problem when the organic EL element is increased in size. Further, when a plurality of dopants are contained, it is technically difficult.
 有機EL素子の有機層の形成においては、現在の真空蒸着法に代わる方法として、溶液の塗布・成膜(ウェットプロセス)による有機層の形成が注目されている(例えば、特許文献1及び2参照。)。 In the formation of the organic layer of the organic EL element, the formation of the organic layer by solution application / film formation (wet process) is attracting attention as a method replacing the current vacuum deposition method (see, for example, Patent Documents 1 and 2). .)
 しかしながら、ウェットプロセスでの有機層の形成においては、有機化合物の種類によっては層の形成時に結晶化してしまうなどの現象が生じることがあり、この場合には外部取り出し効率や視感度効率等を劣化させてしまい、有機EL素子の品質を低下させてしまう。 However, in the formation of an organic layer by a wet process, depending on the type of the organic compound, a phenomenon such as crystallization may occur during the formation of the layer. In this case, the external extraction efficiency and the visibility efficiency are deteriorated. As a result, the quality of the organic EL element is deteriorated.
 また2種以上の材料の混合溶液を用いた場合には、各材料の溶剤に対する溶解性や結晶性、成膜時の乾燥条件等が原因で、均質な膜の形成が困難であるという問題がある。 In addition, when a mixed solution of two or more materials is used, there is a problem that it is difficult to form a uniform film due to the solubility and crystallinity of each material in a solvent, drying conditions during film formation, and the like. is there.
 特に、リン光発光性の有機EL素子では、発光層中にホストとドーパントという2種以上の材料が含有される必要があるため、前記の問題の解決は極めて重要であり、その解決が待たれている。 In particular, in a phosphorescent organic EL device, since it is necessary to contain two or more kinds of materials, that is, a host and a dopant, in the light emitting layer, the solution of the above problem is extremely important, and the solution is awaited. ing.
特開2008-244053号公報JP 2008-244053 A 国際公開第08/108430号International Publication No. 08/108430
 本発明の目的は、外部取り出し量子効率が高く、低駆動電圧であり、且つ、長寿命である有機エレクトロルミネッセンス素子、該素子を備えた照明装置及び表示装置を提供することである。 An object of the present invention is to provide an organic electroluminescence element having a high external extraction quantum efficiency, a low driving voltage, and a long lifetime, and an illumination device and a display device including the element.
 本発明の上記目的は下記の構成により達成された。 The above object of the present invention has been achieved by the following constitution.
 1.陽極と陰極の間に2層以上の発光層を含む複数の構成層が狭持されてなる有機エレクトロルミネッセンス素子において、
該発光層の少なくとも2層がウェットプロセスで作製する工程を経て作製されたことを特徴とする有機エレクトロルミネッセンス素子。
1. In an organic electroluminescence device in which a plurality of constituent layers including two or more light emitting layers are sandwiched between an anode and a cathode,
An organic electroluminescence device, wherein at least two layers of the light emitting layer are manufactured through a process of manufacturing by a wet process.
 2.前記発光層の少なくとも1層がリン光発光性の有機金属錯体を含有することを特徴とする前記1に記載の有機エレクトロルミネッセンス素子。 2. 2. The organic electroluminescent element according to 1 above, wherein at least one of the light emitting layers contains a phosphorescent organometallic complex.
 3.前記リン光発光性の有機金属錯体の少なくとも1種が下記一般式(1)で表される化合物であることを特徴とする前記2に記載の有機エレクトロルミネッセンス素子。 3. 3. The organic electroluminescent device according to 2 above, wherein at least one of the phosphorescent organometallic complexes is a compound represented by the following general formula (1).
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
〔式中、P、Qは、各々炭素原子または窒素原子を表し、A1はP-Cと共に芳香族炭化水素環または芳香族複素環を形成する原子群を表す。A2はQ-Nと共に芳香族複素環を形成する原子群を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。〕
 4.前記一般式(1)で表される化合物が、下記一般式(2)で表される化合物であることを特徴とする前記3に記載の有機エレクトロルミネッセンス素子。
[Wherein, P and Q each represent a carbon atom or a nitrogen atom, and A1 represents an atomic group forming an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with PC. A2 represents an atomic group that forms an aromatic heterocycle with QN. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. ]
4). 4. The organic electroluminescence device as described in 3 above, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (2).
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
〔式中、Zは、置換基を表す。P、Qは、各々炭素原子または窒素原子を表し、A1はP-Cと共に芳香族炭化水素環または芳香族複素環を形成する原子群を表す。A3は-C(R01)=C(R02)-、-N=C(R02)-、-C(R01)=N-または-N=N-を表し、R01、R02は、各々水素原子または置換基を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。〕
 5.前記一般式(2)で表される化合物が、下記一般式(3)で表される化合物であることを特徴とする前記4に記載の有機エレクトロルミネッセンス素子。
[In formula, Z represents a substituent. P and Q each represent a carbon atom or a nitrogen atom, and A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with P—C. A3 represents -C (R01) = C (R02)-, -N = C (R02)-, -C (R01) = N- or -N = N-, and each of R01 and R02 represents a hydrogen atom or a substituent. Represents a group. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. ]
5). 5. The organic electroluminescence device as described in 4 above, wherein the compound represented by the general formula (2) is a compound represented by the following general formula (3).
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
〔式中、R03は置換基を表し、R04は水素原子または置換基を表し、複数のR04は互いに結合して環を形成してもよい。n01は1~4の整数を表す。R05は水素原子または置換基を表し、複数のR04または複数のR05は、各々互いに結合して環を形成してもよい。n02は1~2の整数を表す。R06は水素原子または置換基を表し、互いに結合して環を形成してもよい。n03は1~4の整数を表す。Z1はC-Cと共に6員の芳香族炭化水素環もしくは、5員または6員の芳香族複素環を形成するのに必要な原子群を表す。Z2は炭化水素環または複素環を形成するのに必要な原子群を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。R04とR06及びR05とR06は互いに結合して環を形成していてもよい。〕
 6.前記一般式(3)で表される化合物が、下記一般式(4)で表される化合物であることを特徴とする前記5に記載の有機エレクトロルミネッセンス素子。
[Wherein, R03 represents a substituent, R04 represents a hydrogen atom or a substituent, and a plurality of R04 may be bonded to each other to form a ring. n01 represents an integer of 1 to 4. R05 represents a hydrogen atom or a substituent, and a plurality of R04 or a plurality of R05 may be bonded to each other to form a ring. n02 represents an integer of 1 to 2. R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring. n03 represents an integer of 1 to 4. Z1 represents an atomic group necessary for forming a 6-membered aromatic hydrocarbon ring or a 5-membered or 6-membered aromatic heterocycle together with C—C. Z2 represents an atomic group necessary for forming a hydrocarbon ring or a heterocyclic ring. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. R04 and R06 and R05 and R06 may be bonded to each other to form a ring. ]
6). 6. The organic electroluminescence device as described in 5 above, wherein the compound represented by the general formula (3) is a compound represented by the following general formula (4).
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
〔式中、R03は置換基を表し、R04は水素原子または置換基を表し、複数のR04は互いに結合して環を形成してもよい。n01は1~4の整数を表す。R05は水素原子または置換基を表し、複数のR05は互いに結合して環を形成してもよい。n02は1~2の整数を表す。R06は水素原子または置換基を表し、互いに結合して環を形成してもよい。n03は1~3の整数を表す。R07は置換基または単結合手を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。〕
 7.前記リン光発光性の有機金属錯体がイリジウム錯体であることを特徴とする前記2~6のいずれか1項に記載の有機エレクトロルミネッセンス素子。
[Wherein, R03 represents a substituent, R04 represents a hydrogen atom or a substituent, and a plurality of R04 may be bonded to each other to form a ring. n01 represents an integer of 1 to 4. R05 represents a hydrogen atom or a substituent, and a plurality of R05 may be bonded to each other to form a ring. n02 represents an integer of 1 to 2. R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring. n03 represents an integer of 1 to 3. R07 represents a substituent or a single bond. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. ]
7). 7. The organic electroluminescence device as described in any one of 2 to 6 above, wherein the phosphorescent organometallic complex is an iridium complex.
 8.前記複数の構成層がウェットプロセスで形成される工程を経て作製されたことを特徴とする前記1~7のいずれか1項に記載の有機エレクトロルミネッセンス素子。 8. 8. The organic electroluminescence device according to any one of 1 to 7, wherein the plurality of constituent layers are manufactured through a process of forming by a wet process.
 9.前記発光層の少なくとも1層に接する構成層がウェットプロセスで形成される工程を経て作製されたことを特徴とする前記1~8のいずれか1項に記載の有機エレクトロルミネッセンス素子。 9. 9. The organic electroluminescence device according to any one of 1 to 8, wherein a constituent layer in contact with at least one of the light emitting layers is formed through a step of forming by a wet process.
 10.前記構成層が、発光層と陰極との間に設けられた層であることを特徴とする前記9に記載の有機エレクトロルミネッセンス素子。 10. 10. The organic electroluminescence device according to 9, wherein the constituent layer is a layer provided between the light emitting layer and the cathode.
 11.前記発光層に接する構成層が、いずれもウェットプロセスで形成される工程を経て作製されたことを特徴とする前記1~10のいずれか1項に記載の有機エレクトロルミネッセンス素子。 11. 11. The organic electroluminescence device according to any one of 1 to 10, wherein the constituent layers in contact with the light emitting layer are produced through a process in which all are formed by a wet process.
 12.白色に発光することを特徴とする前記1~11のいずれか1項に記載の有機エレクトロルミネッセンス素子。 12. 12. The organic electroluminescence device as described in any one of 1 to 11 above, which emits white light.
 13.前記1~12のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。 13. 13. An illuminating device comprising the organic electroluminescence element as described in any one of 1 to 12 above.
 14.前記1~12のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする表示装置。 14. 13. A display device comprising the organic electroluminescence element according to any one of 1 to 12 above.
 本発明により、外部取り出し量子効率が高く、低駆動電圧であり、且つ、長寿命である有機エレクトロルミネッセンス素子、該素子を備えた照明装置及び表示装置を提供することができた。 According to the present invention, an organic electroluminescence element having a high external extraction quantum efficiency, a low driving voltage, and a long lifetime, and an illumination device and a display device including the element can be provided.
有機EL素子から構成される表示装置の一例を示した模式図である。It is the schematic diagram which showed an example of the display apparatus comprised from an organic EL element. 表示部Aの模式図である。4 is a schematic diagram of a display unit A. FIG. 画素の模式図である。It is a schematic diagram of a pixel. パッシブマトリクス方式フルカラー表示装置の模式図である。It is a schematic diagram of a passive matrix type full-color display device. 照明装置の概略図である。It is the schematic of an illuminating device. 照明装置の模式図である。It is a schematic diagram of an illuminating device.
 本発明の有機EL素子においては、請求項1~10のいずれか1項に記載の構成を有することにより、外部取り出し量子効率が高く、低駆動電圧であり、且つ、長寿命である有機エレクトロルミネッセンス素子を提供することができた。併せて、該有機エレクトロルミネッセンス素子を備えた表示装置及び照明装置を提供することができた。 The organic EL device of the present invention has the structure according to any one of claims 1 to 10 and has high external extraction quantum efficiency, low driving voltage, and long life. An element could be provided. In addition, a display device and a lighting device including the organic electroluminescence element could be provided.
 以下、本発明の有機EL素子の各構成要素の詳細について、順次説明する。 Hereinafter, details of each component of the organic EL element of the present invention will be sequentially described.
 本発明者等は、上記の課題について鋭意検討したところ、特に膜の厚さを厚くした場合に前述のような不均一な膜が形成されやすく、膜厚が薄い場合には形成されにくいことが判明した。 The present inventors diligently studied the above problem, and in particular, when the thickness of the film is increased, the above-described non-uniform film is likely to be formed, and when the film thickness is small, it is difficult to form. found.
 単純に発光層の膜厚を厚くし、ドーパント(発光ドーパントともいう)が不均一に存在する場合には、発光層内でのキャリア移動が阻害され、外部取り出し効率の低下や電圧の上昇が引き起こされるのに対し、少なくとも2層の薄い膜を積層して形成された発光層を有する有機EL素子を作製した場合には、外部取り出し量子効率が高く、低駆動電圧であり、且つ、長寿命の有機EL素子を提供することが可能となった。 If the film thickness of the light emitting layer is simply increased and the dopant (also referred to as light emitting dopant) is non-uniformly present, carrier movement in the light emitting layer is hindered, leading to a decrease in external extraction efficiency and an increase in voltage. On the other hand, when an organic EL device having a light emitting layer formed by laminating at least two thin films is manufactured, the external extraction quantum efficiency is high, the driving voltage is low, and the lifetime is long. An organic EL element can be provided.
 本発明の有機EL素子は、素子の構成層である発光層の少なくとも2層がウェットプロセスで作製される工程を経て作製されることが特徴であるが、該発光層の形成に用いられるドーパント(発光ドーパント)として好ましく用いられるのは、リン光発光性化合物(リン光発光性金属錯体等ともいう)が好ましく、中でも好ましいのは、上記一般式(1)で表される化合物(有機金属錯体、金属錯体化合物等ともいう)である。 The organic EL device of the present invention is characterized in that it is produced through a process in which at least two layers of the light emitting layer, which is a constituent layer of the device, are produced by a wet process, and a dopant ( A phosphorescent compound (also referred to as a phosphorescent metal complex or the like) is preferably used as the luminescent dopant), and a compound represented by the general formula (1) (organometallic complex, Also referred to as a metal complex compound.
 《一般式(1)で表される化合物》
 本発明の有機EL素子に含有されるリン光発光性の金属錯体としては、上記一般式(1)で表される化合物が好ましい。
<< Compound Represented by Formula (1) >>
The phosphorescent metal complex contained in the organic EL device of the present invention is preferably a compound represented by the above general formula (1).
 以下、一般式(1)で表される化合物について説明する。尚、一般式(1)で表されるリン光発光性の金属錯体は、本発明の有機EL素子の発光層に発光ドーパントとして含有されることが好ましい態様であるが、発光層以外の構成層(本発明の有機EL素子の構成層については後に詳細に説明する。)に含有されていても良い。 Hereinafter, the compound represented by the general formula (1) will be described. Incidentally, the phosphorescent metal complex represented by the general formula (1) is a preferred embodiment that is contained as a light emitting dopant in the light emitting layer of the organic EL device of the present invention. (The constituent layers of the organic EL device of the present invention will be described in detail later).
 一般式(1)において、A1がP-Cと共に形成する芳香族炭化水素環としては、ベンゼン環、ビフェニル環、ナフタレン環、アズレン環、アントラセン環、フェナントレン環、ピレン環、クリセン環、ナフタセン環、トリフェニレン環、o-テルフェニル環、m-テルフェニル環、p-テルフェニル環、アセナフテン環、コロネン環、フルオレン環、フルオラントレン環、ナフタセン環、ペンタセン環、ペリレン環、ペンタフェン環、ピセン環、ピレン環、ピラントレン環、アンスラアントレン環等が挙げられる。 In the general formula (1), examples of the aromatic hydrocarbon ring that A1 forms with PC include a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring, Triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring, Examples include a pyrene ring, a pyrantolen ring, and anthraanthrene ring.
 これらの環は更に、後述する置換基を有してもよい。 These rings may further have a substituent described later.
 一般式(1)において、A1が、P-Cと共に形成する芳香族複素環としては、フラン環、チオフェン環、オキサゾール環、ピロール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、トリアジン環、ベンゾイミダゾール環、オキサジアゾール環、トリアゾール環、イミダゾール環、ピラゾール環、チアゾール環、インドール環、ベンゾイミダゾール環、ベンゾチアゾール環、ベンゾオキサゾール環、キノキサリン環、キナゾリン環、フタラジン環、カルバゾール環、アザカルバゾール環等が挙げられる。 In the general formula (1), the aromatic heterocycle formed by A1 together with P—C includes a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, Benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, azacarbazole A ring etc. are mentioned.
 ここで、アザカルバゾール環とは、前記カルバゾール環を構成するベンゼン環の炭素原子が1つ以上窒素原子で置き換わったものを示す。 Here, the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
 これらの環は更に、後述する置換基を有してもよい。 These rings may further have a substituent described later.
 一般式(1)において、A2が、Q-Nと共に形成する芳香族複素環としては、オキサゾール環、オキサジアゾール環、オキサトリアゾール環、イソオキサゾール環、テトラゾール環、チアジアゾール環、チアトリアゾール環、イソチアゾール環、ピロール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、トリアジン環、イミダゾール環、ピラゾール環、トリアゾール環等が挙げられる。 In the general formula (1), the aromatic heterocycle formed by A2 together with QN includes an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole ring, a thiatriazole ring, Examples include a thiazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
 これらの環は更に、後述する置換基を有してもよい。 These rings may further have a substituent described later.
 (置換基)
 上記の置換基の例としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert-ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素基(芳香族炭化水素環基、芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p-クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、ピリジル基、ピリミジニル基、フリル基、ピロリル基、イミダゾリル基、ベンゾイミダゾリル基、ピラゾリル基、ピラジニル基、トリアゾリル基(例えば、1,2,4-トリアゾール-1-イル基、1,2,3-トリアゾール-1-イル基等)、オキサゾリル基、ベンゾオキサゾリル基、チアゾリル基、イソオキサゾリル基、イソチアゾリル基、フラザニル基、チエニル基、キノリル基、ベンゾフリル基、ジベンゾフリル基、ベンゾチエニル基、ジベンゾチエニル基、インドリル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリニル基、ピリダジニル基、トリアジニル基、キナゾリニル基、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2-ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2-エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2-エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2-エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2-ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2-ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2-エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2-ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2-エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基またはヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2-ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2-エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2-ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)、ホスホノ基等が挙げられる。
(Substituent)
Examples of the substituent include alkyl groups (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group). Group), cycloalkyl group (eg, cyclopentyl group, cyclohexyl group, etc.), alkenyl group (eg, vinyl group, allyl group, etc.), alkynyl group (eg, ethynyl group, propargyl group, etc.), aromatic hydrocarbon group ( Also referred to as aromatic hydrocarbon ring group, aromatic carbocyclic group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, Fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group, etc.) An aromatic heterocyclic group (for example, pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl group, 1,2,3-triazol-1-yl group, etc.), oxazolyl group, benzoxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group, benzo A thienyl group, a dibenzothienyl group, an indolyl group, a carbazolyl group, a carbolinyl group, a diazacarbazolyl group (indicating that one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), a quinoxalinyl group, Pyridazinyl group, triazinyl group, quinazoly Group, phthalazinyl group, etc.), heterocyclic group (eg, pyrrolidyl group, imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyloxy group) Octyloxy group, dodecyloxy group, etc.), cycloalkoxy group (eg, cyclopentyloxy group, cyclohexyloxy group etc.), aryloxy group (eg, phenoxy group, naphthyloxy group etc.), alkylthio group (eg, methylthio group, etc.) Ethylthio group, propylthio group, pentylthio group, hexylthio group, octylthio group, dodecylthio group, etc.), cycloalkylthio group (eg, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (eg, phenylthio group, naphthylthio group, etc.) , Alkoxycarbonyl groups (for example, methyloxycarbonyl group, ethyloxycarbonyl group, butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl groups (for example, phenyloxycarbonyl group, naphthyloxycarbonyl group) ), Sulfamoyl group (for example, aminosulfonyl group, methylaminosulfonyl group, dimethylaminosulfonyl group, butylaminosulfonyl group, hexylaminosulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecylaminosulfonyl group, phenylaminosulfonyl) Group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl group (for example, acetyl group, ethylcarbonyl group, propylcarbonyl) Nyl group, pentylcarbonyl group, cyclohexylcarbonyl group, octylcarbonyl group, 2-ethylhexylcarbonyl group, dodecylcarbonyl group, phenylcarbonyl group, naphthylcarbonyl group, pyridylcarbonyl group, etc.), acyloxy group (for example, acetyloxy group, ethylcarbonyl group) Oxy group, butylcarbonyloxy group, octylcarbonyloxy group, dodecylcarbonyloxy group, phenylcarbonyloxy group, etc.), amide group (for example, methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, propylcarbonylamino group, Pentylcarbonylamino group, cyclohexylcarbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino group, dodecylcarbonylamino group , Phenylcarbonylamino group, naphthylcarbonylamino group, etc.), carbamoyl group (for example, aminocarbonyl group, methylaminocarbonyl group, dimethylaminocarbonyl group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexylaminocarbonyl group, octylaminocarbonyl group) Group, 2-ethylhexylaminocarbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl group, 2-pyridylaminocarbonyl group, etc.), ureido group (for example, methylureido group, ethylureido group, pentylureido group, cyclohexyl) Ureido group, octylureido group, dodecylureido group, phenylureido group, naphthylureido group, 2-pyridylaminoureido group), sulfinyl group ( For example, methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc.), alkylsulfonyl group (for example, Methylsulfonyl group, ethylsulfonyl group, butylsulfonyl group, cyclohexylsulfonyl group, 2-ethylhexylsulfonyl group, dodecylsulfonyl group, etc.), arylsulfonyl group or heteroarylsulfonyl group (for example, phenylsulfonyl group, naphthylsulfonyl group, 2-pyridyl group) Sulfonyl group, etc.), amino group (for example, amino group, ethylamino group, dimethylamino group, butylamino group, cyclopentylamino group, 2-ethyl) Xylamino group, dodecylamino group, anilino group, naphthylamino group, 2-pyridylamino group, etc.), halogen atom (eg, fluorine atom, chlorine atom, bromine atom etc.), fluorinated hydrocarbon group (eg, fluoromethyl group, trimethyl group) Fluoromethyl group, pentafluoroethyl group, pentafluorophenyl group, etc.), cyano group, nitro group, hydroxy group, mercapto group, silyl group (for example, trimethylsilyl group, triisopropylsilyl group, triphenylsilyl group, phenyldiethylsilyl group) Etc.), and phosphono groups.
 一般式(1)において、P1-L1-P2で表される2座の配位子としては、フェニルピリジン、フェニルピラゾール、フェニルイミダゾール、フェニルトリアゾール、フェニルテトラゾール、ピラザボール、アセチルアセトン、ピコリン酸等が挙げられる。 In the general formula (1), examples of the bidentate ligand represented by P1-L1-P2 include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabole, acetylacetone, and picolinic acid. .
 一般式(1)において、j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3を表す、中でも、j2は0である場合が好ましい。 In the general formula (1), j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, j1 + j2 represents 2 or 3, and j2 is preferably 0.
 一般式(1)において、M1は元素周期表における8族~10族の遷移金属元素(単に遷移金属ともいう)が用いられるが、中でも、イリジウムが好ましい。 In the general formula (1), M1 is a transition metal element of group 8 to 10 in the periodic table of elements (also simply referred to as transition metal), and among these, iridium is preferable.
 《一般式(2)で表される化合物》
 本発明に係る一般式(1)で表される化合物の中でも、一般式(2)で表される化合物が好ましい。
<< Compound Represented by Formula (2) >>
Among the compounds represented by the general formula (1) according to the present invention, the compound represented by the general formula (2) is preferable.
 一般式(2)において、Zで表される置換基としては、一般式(1)の説明で記載した置換基と同義であり、好ましくは、芳香族炭化水素環基または芳香族複素環基である。 In the general formula (2), the substituent represented by Z has the same meaning as the substituent described in the description of the general formula (1), preferably an aromatic hydrocarbon ring group or an aromatic heterocyclic group. is there.
 一般式(2)において、A1が、P-Cと共に形成する芳香族炭化水素環としては、例えば、ベンゼン環、ビフェニル環、ナフタレン環、アズレン環、アントラセン環、フェナントレン環、ピレン環、クリセン環、ナフタセン環、トリフェニレン環、o-テルフェニル環、m-テルフェニル環、p-テルフェニル環、アセナフテン環、コロネン環、フルオレン環、フルオラントレン環、ナフタセン環、ペンタセン環、ペリレン環、ペンタフェン環、ピセン環、ピレン環、ピラントレン環、アンスラアントレン環等が挙げられる。 In the general formula (2), examples of the aromatic hydrocarbon ring formed by A1 together with P—C include, for example, a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, Naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, Examples include a picene ring, a pyrene ring, a pyranthrene ring, and an anthraanthrene ring.
 これらの環は更に、Zで表される置換基を有してもよい。 These rings may further have a substituent represented by Z.
 一般式(2)において、A1が、P-Cと共に形成する芳香族複素環としては、例えば、フラン環、チオフェン環、オキサゾール環、ピロール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、トリアジン環、ベンゾイミダゾール環、オキサジアゾール環、トリアゾール環、イミダゾール環、ピラゾール環、チアゾール環、インドール環、ベンゾイミダゾール環、ベンゾチアゾール環、ベンゾオキサゾール環、キノキサリン環、キナゾリン環、フタラジン環、カルバゾール環、カルボリン環、アザカルバゾール環等が挙げられる。 In the general formula (2), examples of the aromatic heterocycle formed by A1 together with PC include a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, and a triazine. Ring, benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, Examples thereof include a carboline ring and an azacarbazole ring.
 ここで、アザカルバゾール環とは、前記カルバゾール環を構成するベンゼン環の炭素原子が1つ以上窒素原子で置き換わったものを示す。 Here, the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
 これらの環は更に、Zで表される置換基を有してもよい。 These rings may further have a substituent represented by Z.
 一般式(2)のA3で表される、-C(R01)=C(R02)-、-N=C(R02)-、-C(R01)=N-において、R01、R02で各々表される置換基は、Zで表される置換基と同義である。 In -C (R01) = C (R02)-, -N = C (R02)-, and -C (R01) = N- represented by A3 in the general formula (2), each represented by R01 and R02 The substituent is the same as the substituent represented by Z.
 一般式(2)において、P1-L1-P2で表される2座の配位子の具体例としては、フェニルピリジン、フェニルピラゾール、フェニルイミダゾール、フェニルトリアゾール、フェニルテトラゾール、ピラザボール、アセチルアセトン、ピコリン酸等が挙げられる。 Specific examples of the bidentate ligand represented by P1-L1-P2 in the general formula (2) include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabol, acetylacetone, picolinic acid, and the like. Is mentioned.
 また、j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3を表す、中でも、j2は0である場合が好ましい。 J1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, j1 + j2 represents 2 or 3, and j2 is preferably 0.
 一般式(2)において、M1で表される元素周期表における8族~10族の遷移金属元素(単に遷移金属ともいう)は、一般式(1)において、M1で表される元素周期表における8族~10族の遷移金属元素と同義である。 In the general formula (2), the transition metal elements of groups 8 to 10 in the periodic table of elements represented by M1 (also simply referred to as transition metals) in the periodic table of elements represented by M1 in the general formula (1) Synonymous with group 8-10 transition metal elements.
 《一般式(3)で表される化合物》
 上記一般式(2)で表される化合物の好ましい態様の一つとして、上記一般式(3)で表される化合物が挙げられる。
<< Compound Represented by Formula (3) >>
One preferred embodiment of the compound represented by the general formula (2) is a compound represented by the general formula (3).
 一般式(3)において、R03、R04、R05、R06で各々表される置換基は、一般式(2)において、Zで表される置換基と同義である。 In the general formula (3), each of the substituents represented by R03, R04, R05, and R06 has the same meaning as the substituent represented by Z in the general formula (2).
 一般式(3)において、Z1がC-Cと共に形成する6員の芳香族炭化水素環としては、ベンゼン環等が挙げられる。 In the general formula (3), examples of the 6-membered aromatic hydrocarbon ring formed by Z1 together with C—C include a benzene ring.
 これらの環は更に、一般式(2)において、Zで表される置換基を有してもよい。 These rings may further have a substituent represented by Z in the general formula (2).
 一般式(3)において、Z1がC-Cと共に形成する5員または6員の芳香族複素環としては、例えば、オキサゾール環、オキサジアゾール環、オキサトリアゾール環、イソオキサゾール環、テトラゾール環、チアジアゾール環、チアトリアゾール環、イソチアゾール環、チオフェン環、フラン環、ピロール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、トリアジン環、イミダゾール環、ピラゾール環、トリアゾール環等が挙げられる。 In the general formula (3), as the 5-membered or 6-membered aromatic heterocycle formed by Z1 together with C—C, for example, an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole And a ring, a thiatriazole ring, an isothiazole ring, a thiophene ring, a furan ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
 これらの環は更に、一般式(2)において、Zで表される置換基を有してもよい。 These rings may further have a substituent represented by Z in the general formula (2).
 一般式(3)において、P1-L1-P2で表される2座の配位子は、一般式(1)において、P1-L1-P2で表される2座の配位子と同義である。 In the general formula (3), the bidentate ligand represented by P1-L1-P2 has the same meaning as the bidentate ligand represented by P1-L1-P2 in the general formula (1). .
 一般式(3)において、M1で表される元素周期表における8族~10族の遷移金属元素は、一般式(1)において、M1で表される元素周期表における8族~10族の遷移金属元素と同義である。 In general formula (3), the transition metal elements of Group 8 to Group 10 in the periodic table of elements represented by M1 are the transition metal groups of Group 8 to Group 10 in the periodic table of elements represented by M1 in General Formula (1). Synonymous with metal element.
 《一般式(4)で表される化合物》
 更に、一般式(3)で表される化合物の中でも、上記一般式(4)で表される化合物が好ましい。
<< Compound Represented by Formula (4) >>
Furthermore, among the compounds represented by the general formula (3), the compounds represented by the general formula (4) are preferable.
 一般式(4)において、R03、R04、R05、R06、R07で各々表される置換基は、一般式(2)において、Zで表される置換基と同義である。 In the general formula (4), the substituents represented by R03, R04, R05, R06, and R07 have the same meaning as the substituent represented by Z in the general formula (2).
 一般式(4)において、P1-L1-P2で表される2座の配位子は、一般式(1)において、P1-L1-P2で表される2座の配位子と同義である。 In the general formula (4), the bidentate ligand represented by P1-L1-P2 has the same meaning as the bidentate ligand represented by P1-L1-P2 in the general formula (1). .
 一般式(4)において、M1で表される元素周期表における8族~10族の遷移金属元素は、一般式(1)において、M1で表される元素周期表における8族~10族の遷移金属元素と同義である。 In the general formula (4), the transition metal elements of groups 8 to 10 in the periodic table of elements represented by M1 are the transition metal groups of groups 8 to 10 in the periodic table of elements represented by M1 in the general formula (1). Synonymous with metal element.
 本発明に係る一般式(1)、(2)、(3)または(4)のいずれかで表される化合物は、Eur.J.Chem.2005,1637-1643頁等に記載の方法で、含窒素環化合物またはイミダゾール化合物に対応するハロゲン化合物を反応させるか、SYNTHESIS 2003,17,2661-2666等に記載の対応するアミンとグリオキザール、及びアルデヒドと塩化アンモニウムとの反応等を参照して合成可能である。 The compound represented by any one of the general formulas (1), (2), (3) or (4) according to the present invention is Eur. J. et al. Chem. 2005, pages 1637-1643 and the like, or a halogen compound corresponding to a nitrogen-containing ring compound or an imidazole compound is reacted, or the corresponding amine and glyoxal and aldehyde described in SYNTHESIS 2003, 17, 2661-2666, etc. It can be synthesized with reference to the reaction of ammonium chloride with ammonium chloride.
 以下、本発明に係る一般式(1)、(2)、(3)または(4)のいずれかで表される化合物(金属錯体化合物、有機金属錯体等ともいう)の具体例を挙げるが、本発明はこれらに限定されない。 Specific examples of the compound represented by any one of the general formulas (1), (2), (3), and (4) according to the present invention (also referred to as a metal complex compound, an organometallic complex, etc.) will be given below. The present invention is not limited to these.
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000014
 これらの金属錯体は、例えば、Organic Letter誌、vol3、No.16、2579~2581頁(2001)、Inorganic Chemistry,第30巻、第8号、1685~1687頁(1991年)、J.Am.Chem.Soc.,123巻、4304頁(2001年)、Inorganic Chemistry,第40巻、第7号、1704~1711頁(2001年)、Inorganic Chemistry,第41巻、第12号、3055~3066頁(2002年)、New Journal of Chemistry.,第26巻、1171頁(2002年)、European Journal of Organic Chemistry,第4巻、695~709頁(2004年)、更にこれらの文献中に記載の参考文献等の方法を適用することにより合成できる。 These metal complexes are described in, for example, Organic Letter, vol. 16, 2579-2581 (2001), Inorganic Chemistry, Vol. 30, No. 8, pp. 1685-1687 (1991), J. Am. Am. Chem. Soc. , 123, 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, pages 1704-1711 (2001), Inorganic Chemistry, Vol. 41, No. 12, pages 3055-3066 (2002) , New Journal of Chemistry. 26, 1171 (2002), European Journal of Organic Chemistry, Vol. 4, pages 695-709 (2004), and further synthesized by applying methods such as references described in these documents. it can.
 以下に、代表的な化合物の合成例を示す。 The synthesis examples of typical compounds are shown below.
 《例示化合物D-26の合成》 << Synthesis of Exemplified Compound D-26 >>
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
 窒素雰囲気下で2-フェニル-(2,4,6-トリメチルフェニル)-1H-イミダゾール、18g(0.06861モル)を2-エトキシエタノール350mlに溶解した溶液に、塩化イリジウム3水和物、8.1g(0.02297モル)及び100mlの水を加え、窒素雰囲気下で5時間還流した。 To a solution of 18 g (0.06861 mol) of 2-phenyl- (2,4,6-trimethylphenyl) -1H-imidazole in 350 ml of 2-ethoxyethanol under a nitrogen atmosphere, iridium chloride trihydrate, 8 0.1 g (0.02297 mol) and 100 ml of water were added and refluxed for 5 hours under a nitrogen atmosphere.
 反応液を冷却し、メタノール500mlを加え、析出した結晶を濾取した。得られた結晶を更にメタノールで洗浄し、乾燥後15.2g(収率88.4%)の錯体Aを得た。 The reaction solution was cooled, 500 ml of methanol was added, and the precipitated crystals were collected by filtration. The obtained crystals were further washed with methanol and dried to obtain 15.2 g (yield: 88.4%) of Complex A.
 窒素雰囲気下で錯体A、14.5g(0.009662モル)及び炭酸ナトリウム、14.5gを2-エトキシエタノール350mlに懸濁させた。この懸濁液にアセチルアセトン3.9g(0.03895モル)を加え、窒素雰囲気下で2時間還流した。 In a nitrogen atmosphere, 14.5 g (0.009662 mol) of complex A and 14.5 g of sodium carbonate were suspended in 350 ml of 2-ethoxyethanol. To this suspension, 3.9 g (0.03895 mol) of acetylacetone was added and refluxed for 2 hours under a nitrogen atmosphere.
 反応液を冷却後、減圧濾過によって炭酸ナトリウム及び無機塩を除去した。溶媒を減圧濃縮した後に得られた固体に水1Lを加えて懸濁後、固体を濾取した。 After cooling the reaction solution, sodium carbonate and inorganic salts were removed by filtration under reduced pressure. 1 L of water was added to the solid obtained after concentration of the solvent under reduced pressure to suspend it, and the solid was collected by filtration.
 得られた結晶を更にメタノール/水=1/1混合溶液で洗浄し、乾燥後14.7g(収率93.6%)の錯体Bを得た。 The obtained crystals were further washed with a methanol / water = 1/1 mixed solution, and after drying, 14.7 g (yield 93.6%) of complex B was obtained.
 窒素雰囲気下で錯体B、7.5g(0.009214モル)及び2-フェニル-(2,4,6-トリメチルフェニル)-1H-イミダゾール、6.0g(0.02287モル)をグリセリン400mlに懸濁させた。窒素雰囲気下で反応温度150~160℃の間で2時間反応させ、錯体Bの消失を確認したところで反応終了とした。 In a nitrogen atmosphere, complex B, 7.5 g (0.009214 mol) and 2-phenyl- (2,4,6-trimethylphenyl) -1H-imidazole, 6.0 g (0.02287 mol) were suspended in 400 ml of glycerin. Made cloudy. The reaction was carried out at a reaction temperature of 150 to 160 ° C. for 2 hours under a nitrogen atmosphere, and when the disappearance of complex B was confirmed, the reaction was completed.
 反応液を冷却し、メタノール500mlを加え、析出した結晶を濾取した。 The reaction solution was cooled, 500 ml of methanol was added, and the precipitated crystals were collected by filtration.
 得られた結晶を更にメタノールで洗浄し、乾燥後収量7.1g(収率78.9%)の粗生成物を得た。この粗生成物を少量の塩化メチレンに溶解し、シカゲルカラムクロマトグラフィーによって精製し(塩化メチレン)6.5g(収率72.2%)の例示化合物D-26を得た。 The obtained crystals were further washed with methanol, and after drying, a crude product having a yield of 7.1 g (yield 78.9%) was obtained. This crude product was dissolved in a small amount of methylene chloride and purified by silica gel column chromatography (methylene chloride) to give 6.5 g (yield 72.2%) of Exemplified Compound D-26.
 日立製作所製F-4500を用いて測定した例示化合物D-26の溶液におけるリン光発光波長は、466nmであった(2-メチルテトラヒドロフラン中)。 The phosphorescence emission wavelength of the solution of Exemplified Compound D-26 measured using Hitachi F-4500 was 466 nm (in 2-methyltetrahydrofuran).
 《有機EL素子の構成層》
 本発明の有機EL素子の構成層について説明する。本発明において、有機EL素子の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。
<< Constituent layers of organic EL elements >>
The constituent layers of the organic EL element of the present invention will be described. In this invention, although the preferable specific example of the layer structure of an organic EL element is shown below, this invention is not limited to these.
 (i)陽極/発光層ユニット/電子輸送層/陰極
 (ii)陽極/正孔輸送層/発光層ユニット/電子輸送層/陰極
 (iii)陽極/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極
 (iv)陽極/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極バッファー層/陰極
 (v)陽極/陽極バッファー層/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極バッファー層/陰極
 更に、発光層ユニットは、少なくとも2層の発光層を有するが、該発光層間には非発光性の中間層を有していてもよい。本発明の有機EL素子としては白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。
(I) Anode / light emitting layer unit / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer unit / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer unit / hole blocking Layer / electron transport layer / cathode (iv) anode / hole transport layer / light emitting layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) anode / anode buffer layer / hole transport layer / light emission Layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode Further, the light emitting layer unit has at least two light emitting layers, and has a non-light emitting intermediate layer between the light emitting layers. Also good. The organic EL element of the present invention is preferably a white light emitting layer, and is preferably a lighting device using these.
 本発明の有機EL素子を構成する各層について説明する。 Each layer constituting the organic EL element of the present invention will be described.
 《電子輸送層》
 電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層もしくは複数層を設けることができる。
《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided with a single layer or a plurality of layers.
 電子輸送層は陰極より注入された電子を発光層に伝達する機能を有していればよく、電子輸送層の構成材料としては従来公知の化合物の中から任意のものを選択し併用することも可能である。 The electron transport layer only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer. As a constituent material of the electron transport layer, any conventionally known compound may be selected and used in combination. Is possible.
 電子輸送層に用いられる従来公知の材料(以下、電子輸送材料という)の例としては、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、ナフタレンペリレン等の複素環テトラカルボン酸無水物、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体、カルボリン誘導体、または、該カルボリン誘導体のカルボリン環を構成する炭化水素環の炭素原子の少なくとも一つが窒素原子で置換されている環構造を有する誘導体等が挙げられる。 Examples of conventionally known materials used for the electron transport layer (hereinafter referred to as electron transport materials) include heterocyclic tetracarboxylic acid anhydrides such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Carbodiimide, fluorenylidenemethane derivative, anthraquinodimethane and anthrone derivative, oxadiazole derivative, carboline derivative, or at least one carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative is substituted with a nitrogen atom. And derivatives having a cyclic structure.
 更に、上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引性基として知られているキノキサリン環を有するキノキサリン誘導体も電子輸送材料として用いることができる。 Furthermore, in the oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as an electron transport material.
 これらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 It is also possible to use a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain.
 また、8-キノリノール誘導体の金属錯体、例えば、トリス(8-キノリノール)アルミニウム(Alq)、トリス(5,7-ジクロロ-8-キノリノール)アルミニウム、トリス(5,7-ジブロモ-8-キノリノール)アルミニウム、トリス(2-メチル-8-キノリノール)アルミニウム、トリス(5-メチル-8-キノリノール)アルミニウム、ビス(8-キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、GaまたはPbに置き替わった金属錯体も電子輸送材料として用いることができる。 In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga or Pb can also be used as the electron transport material.
 その他、メタルフリーもしくはメタルフタロシアニン、またはそれらの末端がアルキル基やスルホン酸基等で置換されているものも電子輸送材料として用いることができる。 In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can also be used as the electron transport material.
 また、n型-Si、n型-SiC等の無機半導体も電子輸送材料として用いることができる。 Further, inorganic semiconductors such as n-type-Si and n-type-SiC can also be used as the electron transport material.
 電子輸送層は電子輸送材料を、例えば、真空蒸着法、湿式法(ウェットプロセスともいい、例えば、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法(ラングミュア・ブロジェット(Langmuir Blodgett法)等を挙げることができる。))等により、薄膜化することにより形成することが好ましい。 The electron transport layer is made of an electron transport material such as a vacuum deposition method, a wet method (also referred to as a wet process, such as a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method, an ink jet method, a printing method, or a spraying method. The film is preferably formed by thinning by a coating method, curtain coating method, LB method (Langmuir Brodgett method, etc.).
 有機EL素子の構成層の形成法については、有機EL素子の作製方法のところで詳細に説明する。 The formation method of the constituent layers of the organic EL element will be described in detail in the section of the method for manufacturing the organic EL element.
 電子輸送層の膜厚については特に制限はないが、通常は5nm~5000nm程度、好ましくは5nm~200nmである。この電子輸送層は上記材料の一種または二種以上からなる一層構造であってもよい。 The film thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5000 nm, preferably 5 nm to 200 nm. This electron transport layer may have a single layer structure composed of one or more of the above materials.
 以下、本発明の白色有機EL素子の電子輸送層の形成に好ましく併用される従来公知の化合物(電子輸送材料)の具体例を挙げるが、本発明はこれらに限定されない。 Hereinafter, specific examples of conventionally known compounds (electron transport materials) that are preferably used in combination with the formation of the electron transport layer of the white organic EL device of the present invention will be given, but the present invention is not limited thereto.
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000017
 《発光層》
 本発明に係る発光層は、電極または電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
<Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
 本発明の有機EL素子においては、発光層を2層以上有し、2層以上であれば何層であってもよい。 The organic EL device of the present invention has two or more light emitting layers, and may have any number of layers as long as it is two or more layers.
 発光層の膜厚の総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧を印加するのを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、2nm~5μmの範囲に調整することが好ましく、更に好ましくは2nm~200nmの範囲に調整され、特に好ましくは、5nm~100nmの範囲である。 The total film thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the uniformity of the film, preventing unnecessary application of high voltage during light emission, and improving the stability of the emission color with respect to the drive current. It is preferable to adjust in the range of 2 nm to 5 μm, more preferably in the range of 2 nm to 200 nm, and particularly preferably in the range of 5 nm to 100 nm.
 発光層の作製には、後述する発光ドーパントやホスト化合物を、例えば、真空蒸着法、湿式法(ウェットプロセスともいい、例えば、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法(ラングミュア・ブロジェット(Langmuir Blodgett法))等を挙げることができる。)等により成膜して形成することができる。(本発明の化合物を発光層に用いる場合、ウェットプロセスで作製することが好ましい。)。 For the production of the light emitting layer, a light emitting dopant or host compound described later is used, for example, a vacuum deposition method, a wet method (also referred to as a wet process, for example, a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method, Examples thereof include an inkjet method, a printing method, a spray coating method, a curtain coating method, an LB method (Langmuir-Blodgett method) and the like. (When the compound of the present invention is used for a light emitting layer, it is preferably produced by a wet process).
 本発明の有機EL素子の発光層には、発光ドーパント(リン光発光性ドーパント(リン光ドーパント、リン光発光性ドーパント基ともいう)や蛍光ドーパント等)化合物と、発光ホスト化合物とを含有することが好ましい。 The light emitting layer of the organic EL device of the present invention contains a light emitting dopant (phosphorescent dopant (also referred to as phosphorescent dopant, phosphorescent dopant group) or fluorescent dopant) compound and a light emitting host compound. Is preferred.
 (発光性ドーパント化合物)
 発光性ドーパント化合物(発光ドーパントともいう)について説明する。
(Luminescent dopant compound)
A light-emitting dopant compound (also referred to as a light-emitting dopant) will be described.
 発光性ドーパントとしては、蛍光ドーパント(蛍光性化合物ともいう)、リン光ドーパント(リン光発光体、リン光性化合物、リン光発光性化合物等ともいう)を用いることができる。 Fluorescent dopants (also referred to as fluorescent compounds) and phosphorescent dopants (also referred to as phosphorescent emitters, phosphorescent compounds, phosphorescent compounds, etc.) can be used as the luminescent dopant.
 (リン光ドーパント(リン光発光ドーパントともいう))
 本発明に係るリン光ドーパントについて説明する。
(Phosphorescent dopant (also called phosphorescent dopant))
The phosphorescent dopant according to the present invention will be described.
 本発明に係るリン光ドーパント化合物は、励起三重項からの発光が観測される化合物であり、具体的には室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。 The phosphorescent dopant compound according to the present invention is a compound in which light emission from an excited triplet is observed, specifically, a compound that emits phosphorescence at room temperature (25 ° C.), and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.
 上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。 The phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of the Fourth Edition Experimental Chemistry Course 7. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
 リン光ドーパントの発光は原理としては2種挙げられ、1つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こって発光性ホスト化合物の励起状態が生成し、このエネルギーをリン光ドーパントに移動させることでリン光ドーパントからの発光を得るというエネルギー移動型、もう1つはリン光ドーパントがキャリアトラップとなり、リン光ドーパント上でキャリアの再結合が起こり、リン光ドーパント化合物からの発光が得られるというキャリアトラップ型であるが、いずれの場合においても、リン光ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。 There are two types of light emission of the phosphorescent dopant in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the luminescent host compound, and this energy is used as the phosphorescent dopant. The energy transfer type is to obtain light emission from the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant compound occurs. In any case, the excited state energy of the phosphorescent dopant is required to be lower than the excited state energy of the host compound.
 本発明の有機EL素子は、発光層の少なくともひとつがリン光発光性の有機金属錯体(リン光発光ドーパント、リン光ドーパント等ともいう)を含有するが、該リン光発光性の有機金属錯体としては、本発明に係る一般式(1)、(2)、(3)または(4)のいずれかで表される化合物を含有することが好ましい。 In the organic EL device of the present invention, at least one of the light-emitting layers contains a phosphorescent organometallic complex (also referred to as a phosphorescent dopant or a phosphorescent dopant). Preferably contains a compound represented by any one of the general formulas (1), (2), (3) or (4) according to the present invention.
 更に、本発明に係る一般式(1)、(2)、(3)または(4)のいずれかで表される化合物において、M1は元素周期表における8族~10族の遷移金属元素を表すが、中でもイリジウムが好ましい。 Further, in the compound represented by any one of the general formulas (1), (2), (3), or (4) according to the present invention, M1 represents a transition metal element of Group 8 to Group 10 in the periodic table. Of these, iridium is preferred.
 また、本発明に係る発光層には、以下の特許公報に記載されている化合物等を併用してもよい。 In addition, the light-emitting layer according to the present invention may be used in combination with compounds described in the following patent publications.
 例えば、国際公開第00/70655号、特開2002-280178号公報、特開2001-181616号公報、特開2002-280179号公報、特開2001-181617号公報、特開2002-280180号公報、特開2001-247859号公報、特開2002-299060号公報、特開2001-313178号公報、特開2002-302671号公報、特開2001-345183号公報、特開2002-324679号公報、国際公開第02/15645号、特開2002-332291号公報、特開2002-50484号公報、特開2002-332292号公報、特開2002-83684号公報、特表2002-540572号公報、特開2002-117978号公報、特開2002-338588号公報、特開2002-170684号公報、特開2002-352960号公報、国際公開第01/93642号、特開2002-50483号公報、特開2002-100476号公報、特開2002-173674号公報、特開2002-359082号公報、特開2002-175884号公報、特開2002-363552号公報、特開2002-184582号公報、特開2003-7469号公報、特表2002-525808号公報、特開2003-7471号公報、特表2002-525833号公報、特開2003-31366号公報、特開2002-226495号公報、特開2002-234894号公報、特開2002-235076号公報、特開2002-241751号公報、特開2001-319779号公報、特開2001-319780号公報、特開2002-62824号公報、特開2002-100474号公報、特開2002-203679号公報、特開2002-343572号公報、特開2002-203678号公報等である。 For example, International Publication No. 00/70655, JP 2002-280178, JP 2001-181616, JP 2002-280179, JP 2001-181617, JP 2002-280180, JP 2001-247859, JP 2002-299060, JP 2001-313178, JP 2002-302671, JP 2001-345183, JP 2002-324679, International publication No. 02/15645, JP 2002-332291 A, JP 2002-50484 A, JP 2002-332292 A, JP 2002-83684 A, JP 2002-540572 A, JP 2002-2002 A. No. 117978, Japanese Patent Laid-Open No. 2002-3385 No. 8, JP-A No. 2002-170684, JP-A No. 2002-352960, WO 01/93642, JP-A No. 2002-50483, JP-A No. 2002-1000047, JP-A No. 2002-173684 Gazette, JP-A-2002-359082, JP-A-2002-175484, JP-A-2002-363552, JP-A-2002-184582, JP-A-2003-7469, JP-T-2002-525808, JP 2003-7471, JP 2002-525833, JP 2003-31366, JP 2002-226495, JP 2002-234894, JP 2002-233506, JP JP 2002-241751 A, JP 2001-31977 A JP, JP 2001-319780, JP 2002-62824, JP 2002-1000047, JP 2002-203679, JP 2002-343572, JP 2002-203678. Etc.
 (蛍光ドーパント(蛍光性化合物ともいう))
 蛍光ドーパントとしては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、または希土類錯体系蛍光体等や、レーザー色素に代表される蛍光量子収率が高い化合物が挙げられる。
(Fluorescent dopant (also called fluorescent compound))
As fluorescent dopants, coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes , Polythiophene dyes, rare earth complex phosphors, and the like, and compounds having a high fluorescence quantum yield such as laser dyes.
 また本発明に係る発光ドーパントは、複数種の化合物を併用して用いてもよく、構造の異なるリン光ドーパント同士の組み合わせや、リン光ドーパントと蛍光ドーパントを組み合わせて用いてもよい。 Further, the light-emitting dopant according to the present invention may be used in combination of a plurality of compounds, and may be a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
 (発光ホスト化合物(発光ホスト等ともいう))
 本発明においてホスト化合物は、発光層に含有される化合物の内で、その層中での質量比が20%以上であり、且つ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での質量比が20%以上であることが好ましい。
(Luminescent host compound (also referred to as luminescent host))
In the present invention, the host compound has a mass ratio of 20% or more among the compounds contained in the light emitting layer, and a phosphorescence quantum yield of phosphorescence emission is 0 at room temperature (25 ° C.). Defined as less than 1 compound. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
 本発明に用いることができる発光ホストとしては、特に制限はなく、従来有機EL素子で用いられる化合物を用いることができる。代表的にはカルバゾール誘導体、トリアリールアミン誘導体、芳香族誘導体、含窒素複素環化合物、チオフェン誘導体、フラン誘導体、オリゴアリーレン化合物等の基本骨格を有するもの、または、カルボリン誘導体やジアザカルバゾール誘導体(ここで、ジアザカルバゾール誘導体とは、カルボリン誘導体のカルボリン環を構成する炭化水素環の少なくとも1つの炭素原子が窒素原子で置換されているものを表す。)等が挙げられる。 The light-emitting host that can be used in the present invention is not particularly limited, and compounds conventionally used in organic EL devices can be used. Typically, a carbazole derivative, a triarylamine derivative, an aromatic derivative, a nitrogen-containing heterocyclic compound, a thiophene derivative, a furan derivative, an oligoarylene compound or the like having a basic skeleton, or a carboline derivative or a diazacarbazole derivative (here And the diazacarbazole derivative represents one in which at least one carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative is substituted with a nitrogen atom.
 本発明に用いることができる公知の発光ホストとしては正孔輸送能、電子輸送能を有しつつ、且つ、発光の長波長化を防ぎ、なおかつ高Tg(ガラス転移温度)である化合物が好ましい。 As the known light-emitting host that can be used in the present invention, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from becoming longer wavelength, and has a high Tg (glass transition temperature) is preferable.
 また、本発明においては、(本発明の発光ホスト及び/または公知の発光ホスト)を単独で用いてもよく、または複数種併用して用いてもよい。 In the present invention, (the light-emitting host of the present invention and / or a known light-emitting host) may be used alone or in combination of two or more.
 発光ホストを複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。 By using a plurality of types of light-emitting hosts, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient.
 また、前記リン光ドーパントとして用いられる公知の化合物を複数種用いることで、異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。 In addition, by using a plurality of known compounds used as the phosphorescent dopant, it is possible to mix different light emission, thereby obtaining an arbitrary emission color.
 また、本発明に用いられる発光ホストとしては、低分子化合物でも、繰り返し単位をもつ高分子化合物でもよく、ビニル基やエポキシ基のような重合性基を有する低分子化合物(重合性発光ホスト)でもよく、このような化合物を一種または複数種用いても良い。 In addition, the light emitting host used in the present invention may be a low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (polymerizable light emitting host). Of course, one or more of such compounds may be used.
 本発明においては、下記一般式(5)で表される発光ホストをいずれかの発光層に含有することが好ましい。 In the present invention, it is preferable that any one of the light emitting layers contains a light emitting host represented by the following general formula (5).
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000018
 一般式(5)において、XはO、SまたはNR46を表す。Y4はアルキル基、アルコキシ基、アリール基、ヘテロアリール基、アリールオキシ基、アラルキル基、アルケニル基、アルキルアミノ基、アラルキルアミノ基、アルキルシリル基、アリールシリル基またはハロゲン化アルキル基を表す。 In the general formula (5), X represents O, S or NR46. Y4 represents an alkyl group, an alkoxy group, an aryl group, a heteroaryl group, an aryloxy group, an aralkyl group, an alkenyl group, an alkylamino group, an aralkylamino group, an alkylsilyl group, an arylsilyl group or a halogenated alkyl group.
 上記の中でも、アリール基またはヘテロアリール基が更に好ましい。 Among the above, an aryl group or a heteroaryl group is more preferable.
 一般式(5)において、R41~R46は、各々水素原子、ハロゲン原子または置換基を表す。R41~R46で表される置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert-ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素基(芳香族炭化水素環基、芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p-クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、ピリジル基、ピリミジニル基、フリル基、ピロリル基、イミダゾリル基、ベンゾイミダゾリル基、ピラゾリル基、ピラジニル基、トリアゾリル基(例えば、1,2,4-トリアゾール-1-イル基、1,2,3-トリアゾール-1-イル基等)、オキサゾリル基、ベンゾオキサゾリル基、チアゾリル基、イソオキサゾリル基、イソチアゾリル基、フラザニル基、チエニル基、キノリル基、ベンゾフリル基、ジベンゾフリル基、ベンゾチエニル基、ジベンゾチエニル基、インドリル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリニル基、ピリダジニル基、トリアジニル基、キナゾリニル基、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2-ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2-エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2-エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2-エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2-ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2-ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2-エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2-ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2-エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基またはヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2-ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2-エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2-ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)、ホスホノ基等が挙げられる。 In the general formula (5), R41 to R46 each represents a hydrogen atom, a halogen atom or a substituent. Examples of the substituent represented by R41 to R46 include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group). Group, pentadecyl group, etc.), cycloalkyl group (eg, cyclopentyl group, cyclohexyl group, etc.), alkenyl group (eg, vinyl group, allyl group, etc.), alkynyl group (eg, ethynyl group, propargyl group, etc.), aromatic carbonization Hydrogen group (also called aromatic hydrocarbon ring group, aromatic carbocyclic group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, Acenaphthenyl, fluorenyl, phenanthryl, indenyl, pyrenyl, bif Nitryl group, etc.), aromatic heterocyclic groups (for example, pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazole- 1-yl group, 1,2,3-triazol-1-yl group, etc.), oxazolyl group, benzoxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, Dibenzofuryl group, benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (in which one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom) ), Quinoxalinyl group, pyridazinyl group, triazini Group, quinazolinyl group, phthalazinyl group, etc.), heterocyclic group (eg, pyrrolidyl group, imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyl) Oxy group, octyloxy group, dodecyloxy group, etc.), cycloalkoxy group (eg, cyclopentyloxy group, cyclohexyloxy group, etc.), aryloxy group (eg, phenoxy group, naphthyloxy group, etc.), alkylthio group (eg, methylthio group) Group, ethylthio group, propylthio group, pentylthio group, hexylthio group, octylthio group, dodecylthio group, etc.), cycloalkylthio group (eg, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (eg, phenylthio group, naphtho group, etc.) Tilthio group), aryloxycarbonyl group (eg, phenyloxycarbonyl group, naphthyloxycarbonyl group, etc.), sulfamoyl group (eg, aminosulfonyl group, methylaminosulfonyl group, dimethylaminosulfonyl group, butylaminosulfonyl group, hexylamino) Sulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecylaminosulfonyl group, phenylaminosulfonyl group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl group (for example, acetyl group, ethylcarbonyl group, propylcarbonyl) Group, pentylcarbonyl group, cyclohexylcarbonyl group, octylcarbonyl group, 2-ethylhexylcarbonyl group, dodecylcarbonyl group, phenylcarbonyl group Naphthylcarbonyl group, pyridylcarbonyl group, etc.), acyloxy group (eg, acetyloxy group, ethylcarbonyloxy group, butylcarbonyloxy group, octylcarbonyloxy group, dodecylcarbonyloxy group, phenylcarbonyloxy group, etc.), amide group (eg, , Methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, propylcarbonylamino group, pentylcarbonylamino group, cyclohexylcarbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino group, dodecylcarbonylamino group, phenylcarbonyl Amino group, naphthylcarbonylamino group, etc.), carbamoyl group (for example, aminocarbonyl group, methylaminocarbonyl group, dimethylaminocarbonyl) Group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexylaminocarbonyl group, octylaminocarbonyl group, 2-ethylhexylaminocarbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl group, 2-pyridylaminocarbonyl group, etc. Ureido group (for example, methylureido group, ethylureido group, pentylureido group, cyclohexylureido group, octylureido group, dodecylureido group, phenylureido group, naphthylureido group, 2-pyridylaminoureido group), sulfinyl group (for example, Methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group Group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc.), alkylsulfonyl group (for example, methylsulfonyl group, ethylsulfonyl group, butylsulfonyl group, cyclohexylsulfonyl group, 2-ethylhexylsulfonyl group, dodecylsulfonyl group) Etc.), arylsulfonyl group or heteroarylsulfonyl group (eg, phenylsulfonyl group, naphthylsulfonyl group, 2-pyridylsulfonyl group, etc.), amino group (eg, amino group, ethylamino group, dimethylamino group, butylamino group, Cyclopentylamino group, 2-ethylhexylamino group, dodecylamino group, anilino group, naphthylamino group, 2-pyridylamino group, etc.), halogen atom (eg fluorine atom, chlorine atom, bromine atom etc.), fluoride Hydrogen halide group (eg, fluoromethyl group, trifluoromethyl group, pentafluoroethyl group, pentafluorophenyl group, etc.), cyano group, nitro group, hydroxy group, mercapto group, silyl group (eg, trimethylsilyl group, triisopropylsilyl group) Group, triphenylsilyl group, phenyldiethylsilyl group, etc.), phosphono group and the like.
 またこれらの置換基及びY4は上記の置換基によって更に置換されていてもよい。また、これらの置換基は複数が互いに結合して環を形成していてもよい。 Further, these substituents and Y4 may be further substituted with the above substituents. In addition, a plurality of these substituents may be bonded to each other to form a ring.
 一般式(5)で表される化合物の中でも、更に好ましいのは下記一般式(6)で表される化合物である。 Among the compounds represented by the general formula (5), a compound represented by the following general formula (6) is more preferable.
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000019
 一般式(6)において、XはOまたはSを表す。Y5、Y51、Y52は、各々アルキル基、アルコキシ基、アリール基、ヘテロアリール基、アリールオキシ基、アラルキル基、アルケニル基、アルキルアミノ基、アラルキルアミノ基、アルキルシリル基、アリールシリル基またはハロゲン化アルキル基を表す。 In the general formula (6), X represents O or S. Y5, Y51 and Y52 are each an alkyl group, alkoxy group, aryl group, heteroaryl group, aryloxy group, aralkyl group, alkenyl group, alkylamino group, aralkylamino group, alkylsilyl group, arylsilyl group or alkyl halide Represents a group.
 上記の中でも、アリール基またはヘテロアリール基が更に好ましい。 Among the above, an aryl group or a heteroaryl group is more preferable.
 n51及びn52は0または1~2の整数を表し、n51+n52は0~3である。 N51 and n52 represent 0 or an integer of 1 to 2, and n51 + n52 is 0 to 3.
 また、Y5、Y51及びY52は前述の置換基によって置換されていてもよい。また、これらの置換基は複数が互いに結合して環を形成していてもよい。 Y5, Y51, and Y52 may be substituted with the above-described substituents. In addition, a plurality of these substituents may be bonded to each other to form a ring.
 また、前記一般式(4)または(5)で表される化合物は、キャリア輸送性の点から、少なくとも1つのカルバゾリル基を含有することが好ましい。 The compound represented by the general formula (4) or (5) preferably contains at least one carbazolyl group from the viewpoint of carrier transportability.
 公知の発光ホストの具体例としては、以下の文献に記載の化合物が挙げられる。 Specific examples of known light-emitting hosts include compounds described in the following documents.
 特開2001-257076号公報、同2002-308855号公報、同2001-313179号公報、同2002-319491号公報、同2001-357977号公報、同2002-334786号公報、同2002-8860号公報、同2002-334787号公報、同2002-15871号公報、同2002-334788号公報、同2002-43056号公報、同2002-334789号公報、同2002-75645号公報、同2002-338579号公報、同2002-105445号公報、同2002-343568号公報、同2002-141173号公報、同2002-352957号公報、同2002-203683号公報、同2002-363227号公報、同2002-231453号公報、同2003-3165号公報、同2002-234888号公報、同2003-27048号公報、同2002-255934号公報、同2002-260861号公報、同2002-280183号公報、同2002-299060号公報、同2002-302516号公報、同2002-305083号公報、同2002-305084号公報、同2002-308837号公報等。 JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445, 2002-343568, 2002-141173, 2002-352957, 2002-203683, 2002-363227, 2002-231453, 2003-3165, 2002-234888, 2003-27048, 2002-255934, 2002-260861, 2002-280183, 2002-299060, 2002 -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
 以下、本発明の有機EL素子の発光層の発光ホストとして用いられる具体例を挙げるが、本発明はこれらに限定されない。 Hereinafter, although the specific example used as a light emission host of the light emitting layer of the organic EL element of this invention is given, this invention is not limited to these.
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000021
Figure JPOXMLDOC01-appb-C000021
Figure JPOXMLDOC01-appb-C000022
Figure JPOXMLDOC01-appb-C000022
Figure JPOXMLDOC01-appb-C000023
Figure JPOXMLDOC01-appb-C000023
Figure JPOXMLDOC01-appb-C000024
Figure JPOXMLDOC01-appb-C000024
Figure JPOXMLDOC01-appb-C000025
Figure JPOXMLDOC01-appb-C000025
Figure JPOXMLDOC01-appb-C000026
Figure JPOXMLDOC01-appb-C000026
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000028
Figure JPOXMLDOC01-appb-C000028
Figure JPOXMLDOC01-appb-C000029
Figure JPOXMLDOC01-appb-C000029
Figure JPOXMLDOC01-appb-C000030
Figure JPOXMLDOC01-appb-C000030
Figure JPOXMLDOC01-appb-C000031
Figure JPOXMLDOC01-appb-C000031
Figure JPOXMLDOC01-appb-C000032
Figure JPOXMLDOC01-appb-C000032
 《陰極》
 一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。
"cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.
 これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。 Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
 陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm~5μm、好ましくは50nm~200nmの範囲で選ばれる。尚、発光した光を透過させるため、有機EL素子の陽極または陰極のいずれか一方が透明または半透明であれば発光輝度が向上し好都合である。 The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm. In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the light emission luminance is improved, which is convenient.
 また、陰極に上記金属を1nm~20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に作製することで、透明または半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 In addition, a transparent or semi-transparent cathode can be produced by producing the conductive transparent material mentioned in the description of the anode on the cathode after producing the metal with a film thickness of 1 nm to 20 nm. By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
 《注入層:電子注入層(陰極バッファー層)、正孔注入層》
 注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記の如く陽極と発光層または正孔輸送層の間、及び陰極と発光層または電子輸送層との間に存在させてもよい。
<< Injection layer: electron injection layer (cathode buffer layer), hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer. May be.
 注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123頁~166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) ) ”, Chapter 2,“ Electrode Materials ”(pages 123 to 166), which has a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
 陽極バッファー層(正孔注入層)は、特開平9-45479号公報、同9-260062号公報、同8-288069号公報等にもその詳細が記載されており、具体例として、銅フタロシアニンに代表されるフタロシアニンバッファー層、酸化バナジウムに代表される酸化物バッファー層、アモルファスカーボンバッファー層、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子を用いた高分子バッファー層等が挙げられる。 The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
 陰極バッファー層(電子注入層)は、特開平6-325871号公報、同9-17574号公報、同10-74586号公報等にもその詳細が記載されており、具体的にはストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。上記バッファー層(注入層)はごく薄い膜であることが望ましく、素材にもよるがその膜厚は0.1nm~5μmの範囲が好ましい。 The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm, although it depends on the material.
 本発明の有機EL素子においては、上記の陰極または陰極に接する構成層(例えば、電子注入層(陰極バッファー層))中に、周期表の第1族または第2族に属する元素であり、該元素の金属イオン(Mn+)/金属(M)系の標準電極電位が-3Vvs.SHEよりも大きい元素の金属または金属化合物を含有することが特徴である。 In the organic EL device of the present invention, the above-described cathode or a constituent layer in contact with the cathode (for example, an electron injection layer (cathode buffer layer)) is an element belonging to Group 1 or Group 2 of the periodic table, The standard electrode potential of the elemental metal ion (M n + ) / metal (M) system is −3 Vvs. It is characterized by containing a metal or metal compound of an element larger than SHE.
 ここで、本発明に係るMn+/M系の標準電極電位E°は、温度25℃、溶質の活量がすべて1の水溶液中における、標準水素電極に対する電極電位であり、例えば「改定第3版 化学便覧 基礎編II」(日本化学会編)のII-474ページ、表12・46の値を参考にできる。 Here, the standard electrode potential E ° of the M n + / M system according to the present invention is an electrode potential with respect to the standard hydrogen electrode in an aqueous solution having a temperature of 25 ° C. and an solute activity of all 1. For example, “Revision No. 3 You can refer to the values in Tables 12 and 46, page II-474 of “Chemical Handbook Basic Edition II” (The Chemical Society of Japan).
 本発明に係る、周期表の第1族または第2族に属する元素であり、該元素の金属イオン(Mn+)/金属(M)系の標準電極電位が-3Vvs.SHEよりも大きい元素の金属または金属化合物を構成する元素としては、具体的には、K(-2.925(V))、Ca(-2.840(V))、Na(-2.714(V))、Mg(-2.356(V))等を挙げることができる。 According to the present invention, the element belongs to Group 1 or Group 2 of the periodic table, and the standard electrode potential of the metal ion (M n + ) / metal (M) system of the element is −3 Vvs. Specific examples of the elements constituting the metal or metal compound of an element larger than SHE include K (-2.925 (V)), Ca (-2.840 (V)), Na (-2.714). (V)), Mg (-2.356 (V)) and the like.
 《阻止層:正孔阻止層、電子阻止層》
 阻止層は、上記の如く有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
<Blocking layer: hole blocking layer, electron blocking layer>
The blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
 正孔阻止層とは広い意味では電子輸送層の機能を有し、電子を輸送する機能を有しつつ正孔を輸送する能力が著しく小さい正孔阻止材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking.
 また、後述する電子輸送層の構成を必要に応じて、本発明に係わる正孔阻止層として用いることができる。 Moreover, the structure of the electron transport layer described later can be used as a hole blocking layer according to the present invention, if necessary.
 本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。 The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
 正孔阻止層には、前述のホスト化合物として挙げた、カルバゾール誘導体、カルボリン誘導体、ジアザカルバゾール誘導体(ここで、ジアザカルバゾール誘導体とは、カルボリン環を構成する炭素原子のいずれかひとつが窒素原子で置き換わったものを示す)を含有することが好ましい。 The hole blocking layer includes a carbazole derivative, a carboline derivative, a diazacarbazole derivative (herein, a diazacarbazole derivative is a nitrogen atom in which any one of carbon atoms constituting the carboline ring) It is preferable to contain (represented by).
 また、本発明においては、複数の発光色の異なる複数の発光層を有する場合、その発光極大波長が最も短波にある発光層が、全発光層中、最も陽極に近いことが好ましいが、このような場合、該最短波層と該層の次に陽極に近い発光層との間に正孔阻止層を追加して設けることが好ましい。更には、該位置に設けられる正孔阻止層に含有される化合物の50質量%以上が、前記最短波発光層のホスト化合物に対しそのイオン化ポテンシャルが0.3eV以上大きいことが好ましい。 In the present invention, when a plurality of light emitting layers having different light emission colors are provided, the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers. In this case, it is preferable to additionally provide a hole blocking layer between the shortest wave layer and the light emitting layer next to the anode next to the anode. Furthermore, it is preferable that 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more larger than the host compound of the shortest wave emitting layer.
 イオン化ポテンシャルは化合物のHOMO(最高占有軌道)レベルにある電子を真空準位に放出するのに必要なエネルギーで定義され、例えば下記に示すような方法により求めることができる。 The ionization potential is defined by the energy required to emit electrons at the HOMO (highest occupied orbital) level of the compound to the vacuum level, and can be determined by, for example, the following method.
 (1)米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian98(Gaussian98、Revision A.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6-31G*を用いて構造最適化を行うことにより算出した値(eV単位換算値)として求めることができる。この計算値が有効な背景には、この手法で求めた計算値と実験値の相関が高いためである。 (1) A keyword using Gaussian 98 (Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), which is molecular orbital calculation software manufactured by Gaussian, USA. As a value (eV unit converted value) calculated by performing structure optimization using B3LYP / 6-31G *. The reason why this calculated value is effective is that there is a high correlation between the calculated value obtained by this method and the experimental value.
 (2)イオン化ポテンシャルは光電子分光法で直接測定する方法により求めることもできる。例えば、理研計器社製の低エネルギー電子分光装置「Model AC-1」を用いて、あるいは紫外光電子分光として知られている方法を好適に用いることができる。 (2) The ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy. For example, a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd. or a method known as ultraviolet photoelectron spectroscopy can be suitably used.
 一方、電子阻止層とは広い意味では正孔輸送層の機能を有し、正孔を輸送する機能を有しつつ電子を輸送する能力が著しく小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved.
 また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係る正孔阻止層、電子輸送層の膜厚としては、好ましくは3nm~100nmであり、更に好ましくは5nm~30nmである。 Moreover, the structure of the hole transport layer described later can be used as an electron blocking layer as necessary. The film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
 《正孔輸送層》
 正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層または複数層設けることができる。
《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
 正孔輸送材料としては、正孔の注入または輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、また導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。 The hole transport material has either hole injection or transport or electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
 正孔輸送材料としては上記のものを使用することができるが、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
 芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′-テトラフェニル-4,4′-ジアミノフェニル;N,N′-ジフェニル-N,N′-ビス(3-メチルフェニル)-〔1,1′-ビフェニル〕-4,4′-ジアミン(TPD);2,2-ビス(4-ジ-p-トリルアミノフェニル)プロパン;1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキサン;N,N,N′,N′-テトラ-p-トリル-4,4′-ジアミノビフェニル;1,1-ビス(4-ジ-p-トリルアミノフェニル)-4-フェニルシクロヘキサン;ビス(4-ジメチルアミノ-2-メチルフェニル)フェニルメタン;ビス(4-ジ-p-トリルアミノフェニル)フェニルメタン;N,N′-ジフェニル-N,N′-ジ(4-メトキシフェニル)-4,4′-ジアミノビフェニル;N,N,N′,N′-テトラフェニル-4,4′-ジアミノジフェニルエーテル;4,4′-ビス(ジフェニルアミノ)クオードリフェニル;N,N,N-トリ(p-トリル)アミン;4-(ジ-p-トリルアミノ)-4′-〔4-(ジ-p-トリルアミノ)スチリル〕スチルベン;4-N,N-ジフェニルアミノ-(2-ジフェニルビニル)ベンゼン;3-メトキシ-4′-N,N-ジフェニルアミノスチルベンゼン;N-フェニルカルバゾール、更には米国特許第5,061,569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′-ビス〔N-(1-ナフチル)-N-フェニルアミノ〕ビフェニル(NPD)、特開平4-308688号公報に記載されているトリフェニルアミンユニットが3つスターバースト型に連結された4,4′,4″-トリス〔N-(3-メチルフェニル)-N-フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。 Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' Di (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino -(2-diphenylvinyl) benzene; 3-methoxy-4'-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and also two described in US Pat. No. 5,061,569 Having a condensed aromatic ring of, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-308 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the like.
 更にこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Further, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
 また、p型-Si、p型-SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Also, inorganic compounds such as p-type-Si and p-type-SiC can be used as the hole injection material and the hole transport material.
 また、特開平11-251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような、所謂p型正孔輸送材料を用いることもできる。本発明においては、より高効率の発光素子が得られることからこれらの材料を用いることが好ましい。 Also, JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
 正孔輸送層は上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。 The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can.
 正孔輸送層の膜厚については特に制限はないが、通常は5nm~5μm程度、好ましくは5nm~200nmである。この正孔輸送層は上記材料の一種または2種以上からなる一層構造であってもよい。 The film thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 μm, preferably 5 nm to 200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.
 また、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4-297076号公報、特開2000-196140号公報、同2001-102175号公報の各公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 It is also possible to use a hole transport layer having a high p property doped with impurities. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
 本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
 以下、本発明の有機EL素子の正孔輸送層の形成に好ましく用いられる化合物の具体例を挙げるが、本発明はこれらに限定されない。 Hereinafter, although the specific example of the compound preferably used for formation of the positive hole transport layer of the organic EL element of this invention is given, this invention is not limited to these.
Figure JPOXMLDOC01-appb-C000033
Figure JPOXMLDOC01-appb-C000033
Figure JPOXMLDOC01-appb-C000034
Figure JPOXMLDOC01-appb-C000034
Figure JPOXMLDOC01-appb-C000035
Figure JPOXMLDOC01-appb-C000035
Figure JPOXMLDOC01-appb-C000036
Figure JPOXMLDOC01-appb-C000036
 《陽極》
 有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au等の金属、CuI、インジウムチンオキシド(ITO)、SnO、ZnO等の導電性透明材料が挙げられる。
"anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
 また、IDIXO(In-ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度をあまり必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。 Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when pattern accuracy is not required (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
 あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式成膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。更に膜厚は材料にもよるが、通常10nm~1000nm、好ましくは10nm~200nmの範囲で選ばれる。 Alternatively, when a material that can be applied such as an organic conductive compound is used, a wet film forming method such as a printing method or a coating method can be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 nm to 1000 nm, preferably 10 nm to 200 nm.
 《支持基板》
 本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等とも言う)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。
《Support substrate》
As a support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc., and it is transparent. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
 樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート(TAC)、セルロースナイトレート等のセルロースエステル類またはそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリルあるいはポリアリレート類、アートン(商品名JSR社製)あるいはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。 Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfone , Polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylates, cyclone resins such as Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Etc.
 樹脂フィルムの表面には、無機物、有機物の被膜またはその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129-1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が0.01g/(m・24h)以下のバリア性フィルムであることが好ましく、更には、JIS K 7126-1987に準拠した方法で測定された酸素透過度が、10-3ml/(m・24h・atm)以下、水蒸気透過度が、10-5g/(m・24h)以下の高バリア性フィルムであることが好ましい。 On the surface of the resin film, an inorganic film, an organic film or a hybrid film of both may be formed. The water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. , Relative humidity (90 ± 2)% RH) is preferably 0.01 g / (m 2 · 24 h) or less, and further, oxygen measured by a method according to JIS K 7126-1987. A high barrier film having a permeability of 10 −3 ml / (m 2 · 24 h · atm) or less and a water vapor permeability of 10 −5 g / (m 2 · 24 h) or less is preferable.
 バリア膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。更に該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。 The material for forming the barrier film may be any material that has a function of suppressing the intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
 バリア膜の形成方法については特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ-イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができるが、特開2004-68143号公報に記載されているような大気圧プラズマ重合法によるものが特に好ましい。 The method for forming the barrier film is not particularly limited. For example, the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma weight A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
 不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, ceramic substrates, and the like.
 本発明の有機EL素子の発光の室温における外部取り出し効率は、1%以上であることが好ましく、より好ましくは5%以上である。 The external extraction efficiency at room temperature of light emission of the organic EL element of the present invention is preferably 1% or more, more preferably 5% or more.
 ここに、外部取り出し量子効率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。 Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
 また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 Also, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
 《有機EL素子の製造方法》
 有機EL素子の製造方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層(電子注入層)/陰極からなる素子の製造方法について説明する。
<< Method for Manufacturing Organic EL Element >>
As an example of a method for producing an organic EL device, a device comprising an anode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / cathode Will be described.
 まず、適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10nm~200nmの膜厚になるように形成させ、陽極を作製する。 First, a thin film made of a desired electrode material, for example, a material for an anode is formed on a suitable substrate so as to have a thickness of 1 μm or less, preferably 10 nm to 200 nm, thereby producing an anode.
 次に、この上に素子材料である正孔注入層、正孔輸送層、発光層、正孔阻止層、電子輸送層、陰極バッファー層等の有機化合物を含有する薄膜を形成させる。 Next, a thin film containing an organic compound such as a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, and a cathode buffer layer, which are element materials, is formed thereon.
 本発明のリン光発光性の有機EL素子においては、少なくとも2層の発光層は、湿式法(ウェットプロセス)により塗布・成膜される。 In the phosphorescent organic EL device of the present invention, at least two light emitting layers are applied and formed by a wet method.
 湿式法としては、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法等があるが、精密な薄膜が形成可能で、且つ高生産性の点から、ダイコート法、ロールコート法、インクジェット法、スプレーコート法などのロール・ツー・ロール方式適性の高い方法が好ましい。また、層ごとに異なる成膜法を適用してもよい。 Wet methods include spin coating, casting, die coating, blade coating, roll coating, ink jet, printing, spray coating, curtain coating, and LB, but precise thin films can be formed. In view of high productivity, a method having high suitability for a roll-to-roll method such as a die coating method, a roll coating method, an ink jet method, or a spray coating method is preferable. Different film formation methods may be applied for each layer.
 本発明に係る有機EL材料を溶解または分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、DMF、DMSO等の有機溶媒を用いることができる。 Examples of the liquid medium for dissolving or dispersing the organic EL material according to the present invention include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene. Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as DMF and DMSO can be used.
 また、分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 Further, as a dispersion method, it can be dispersed by a dispersion method such as ultrasonic wave, high shearing force dispersion or media dispersion.
 これらの層の形成後、その上に陰極用物質からなる薄膜を1μm以下、好ましくは50~200nmの範囲の膜厚になるように形成させ、陰極を設けることにより所望の有機EL素子が得られる。 After these layers are formed, a thin film made of a cathode material is formed thereon so as to have a thickness of 1 μm or less, preferably in the range of 50 to 200 nm, and a desired organic EL device can be obtained by providing a cathode. .
 また、順序を逆にして、陰極、陰極バッファー層、電子輸送層、正孔阻止層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。 Also, the cathode, cathode buffer layer, electron transport layer, hole blocking layer, light emitting layer, hole transport layer, hole injection layer, and anode can be formed in the reverse order.
 このようにして得られた多色の表示装置に、直流電圧を印加する場合には陽極を+、陰極を-0210の極性として電圧2V~40V程度を印加すると発光が観測できる。また交流電圧を印加してもよい。尚、印加する交流の波形は任意でよい。 When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 V to 40 V with the anode being + and the cathode being −0210. An alternating voltage may be applied. The alternating current waveform to be applied may be arbitrary.
 《封止》
 本発明に用いられる封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。
<Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
 封止部材としては、有機EL素子の表示領域を覆うように配置されておればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。 The sealing member may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape. Further, transparency and electrical insulation are not particularly limited.
 具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
 また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等から形成されたものを挙げることができる。 Also, examples of the polymer plate include those formed from polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, polysulfone and the like.
 金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブテン、シリコン、ゲルマニウム及びタンタルからなる群から選ばれる一種以上の金属または合金からなるものが挙げられる。 Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
 本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。 In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned.
 更には、ポリマーフィルムは、JIS K 7126-1987に準拠した方法で測定された酸素透過度が1×10-3ml/(m・24h・atm)以下、JIS K 7129-1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が、1×10-3g/(m・24h)以下のものであることが好ましい。 Furthermore, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 ml / (m 2 · 24 h · atm) or less, and a method according to JIS K 7129-1992. It is preferable that the water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured in (1) is 1 × 10 −3 g / (m 2 · 24 h) or less.
 封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
 接着剤として具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化及び熱硬化型接着剤、2-シアノアクリル酸エステル等の湿気硬化型等の接着剤を挙げることができる。また、エポキシ系等の熱及び化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。 Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
 なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、前記接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。 In addition, since an organic EL element may deteriorate by heat processing, what can be adhesively cured from room temperature to 80 ° C. is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
 また、有機層を挟み支持基板と対向する側の電極の外側に該電極と有機層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、該膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。 In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
 更に、該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ-イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 Furthermore, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
 封止部材と有機EL素子の表示領域との間隙には、気相及び液相では、窒素、アルゴン等の不活性気体やフッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
 吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、沃化バリウム、沃化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。 Examples of the hygroscopic compound include metal oxides (eg, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide), sulfates (eg, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
 《保護膜、保護板》
 有機層を挟み支持基板と対向する側の前記封止膜、あるいは前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、あるいは保護板を設けてもよい。特に封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量且つ薄膜化ということからポリマーフィルムを用いることが好ましい。
《Protective film, protective plate》
In order to increase the mechanical strength of the element, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or on the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, and the like used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
 《光取り出し》
 有機EL素子は空気よりも屈折率の高い(屈折率が1.7~2.1程度)層の内部で発光し、発光層で発生した光のうち15%から20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。
《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because the light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the element, or between the transparent electrode or the light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
 この光の取り出しの効率を向上させる手法としては、例えば、透明基板表面に凹凸を形成し、透明基板と空気界面での全反射を防ぐ方法(米国特許第4,774,435号明細書)、基板に集光性を持たせることにより効率を向上させる方法(特開昭63-314795号公報)、素子の側面等に反射面を形成する方法(特開平1-220394号公報)、基板と発光体の間に中間の屈折率を持つ平坦層を導入し、反射防止膜を形成する方法(特開昭62-172691号公報)、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法(特開2001-202827号公報)、基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法(特開平11-283751号公報)等がある。 As a method of improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate and preventing total reflection at the transparent substrate and the air interface (US Pat. No. 4,774,435), A method for improving efficiency by giving light condensing property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on the side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from the substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No. 62-172691), a flat having a lower refractive index between the substrate and the light emitter than the substrate A method of introducing a layer (Japanese Patent Laid-Open No. 2001-202827), a method of forming a diffraction grating between any one of a substrate, a transparent electrode layer and a light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951) Gazette).
 本発明においては、これらの方法を本発明の有機EL素子と組み合わせて用いることができるが、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法、あるいは基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法を好適に用いることができる。 In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
 本発明はこれらの手段を組み合わせることにより、更に高輝度あるいは耐久性に優れた素子を得ることができる。 In the present invention, by combining these means, it is possible to obtain an element having higher brightness or durability.
 透明電極と透明基板の間に低屈折率の媒質を光の波長よりも長い厚みで形成すると、透明電極から出てきた光は、媒質の屈折率が低いほど外部への取り出し効率が高くなる。 When a medium having a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the efficiency of taking out the light from the transparent electrode to the outside increases as the refractive index of the medium decreases.
 低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマー等が挙げられる。透明基板の屈折率は一般に1.5~1.7程度であるので、低屈折率層は屈折率がおよそ1.5以下であることが好ましい。また、更に1.35以下であることが好ましい。 Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
 また、低屈折率媒質の厚みは媒質中の波長の2倍以上となるのが望ましい。これは低屈折率媒質の厚みが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 Also, the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
 全反射を起こす界面もしくはいずれかの媒質中に回折格子を導入する方法は、光取り出し効率の向上効果が高いという特徴がある。この方法は回折格子が1次の回折や2次の回折といった所謂ブラッグ回折により、光の向きを屈折とは異なる特定の向きに変えることができる性質を利用して、発光層から発生した光のうち層間での全反射等により外に出ることができない光を、いずれかの層間もしくは、媒質中(透明基板内や透明電極内)に回折格子を導入することで光を回折させ、光を外に取り出そうとするものである。 The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction. Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating in any layer or medium (in a transparent substrate or transparent electrode), and the light is removed. I want to take it out.
 導入する回折格子は、二次元的な周期屈折率を持っていることが望ましい。これは発光層で発光する光はあらゆる方向にランダムに発生するので、ある方向にのみ周期的な屈折率分布を持っている一般的な1次元回折格子では、特定の方向に進む光しか回折されず、光の取り出し効率がさほど上がらない。 It is desirable that the diffraction grating to be introduced has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much.
 しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 However, by making the refractive index distribution a two-dimensional distribution, the light traveling in all directions is diffracted, and the light extraction efficiency is increased.
 回折格子を導入する位置としては前述の通り、いずれかの層間もしくは媒質中(透明基板内や透明電極内)でもよいが、光が発生する場所である有機発光層の近傍が望ましい。 As described above, the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
 このとき、回折格子の周期は媒質中の光の波長の約1/2~3倍程度が好ましい。 At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
 回折格子の配列は正方形のラチス状、三角形のラチス状、ハニカムラチス状等、2次元的に配列が繰り返されることが好ましい。 The arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
 《集光シート》
 本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、あるいは所謂集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。
<Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the light emitting surface By condensing in the front direction, the luminance in a specific direction can be increased.
 マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を2次元に配列する。一辺は10μm~100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚みが厚くなり好ましくない。 As an example of a microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
 集光シートとしては、例えば、液晶表示装置のLEDバックライトで実用化されているものを用いることが可能である。このようなシートとして、例えば、住友スリーエム社製輝度上昇フィルム(BEF)等を用いることができる。 As the condensing sheet, it is possible to use, for example, a sheet that has been put to practical use in an LED backlight of a liquid crystal display device. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used.
 プリズムシートの形状としては、例えば、基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であってもよい。 As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
 また、発光素子からの光放射角を制御するために、光拡散板・フィルムを集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)等を用いることができる。 Further, in order to control the light emission angle from the light emitting element, a light diffusion plate / film may be used in combination with the light collecting sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
 《用途》
 本発明の有機EL素子は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。発光光源として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
<Application>
The organic EL element of the present invention can be used as a display device, a display, and various light emission sources. For example, lighting devices (home lighting, interior lighting), clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
 本発明の有機EL素子においては、必要に応じ成膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもよいし、電極と発光層をパターニングしてもよいし、素子全層をパターニングしてもよく、素子の作製においては、従来公知の方法を用いることができる。 In the organic EL device of the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like during film formation, if necessary. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned. In the fabrication of the element, a conventionally known method is used. Can do.
 本発明の有機EL素子や本発明に係る化合物の発光する色は、「新編色彩科学ハンドブック」(日本色彩学会編、東京大学出版会、1985)の108頁の図4.16において、分光放射輝度計CS-1000(コニカミノルタセンシング(株)製)で測定した結果をCIE色度座標に当てはめたときの色で決定される。 The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on page 108 of “New Color Science Handbook” (Edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with a total of CS-1000 (manufactured by Konica Minolta Sensing Co., Ltd.) is applied to the CIE chromaticity coordinates.
 また、本発明の有機EL素子が白色素子の場合には、白色とは、2度視野角正面輝度を上記方法により測定した際に、1000cd/mでのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.1の領域内にあることを言う。 When the organic EL element of the present invention is a white element, white means that the chromaticity in the CIE1931 color system at 1000 cd / m 2 is X when the 2 ° viewing angle front luminance is measured by the above method. = 0.33 ± 0.07 and Y = 0.33 ± 0.1.
 《表示装置》
 本発明の表示装置について説明する。本発明の表示装置は、本発明の有機EL素子を具備したものである。
<Display device>
The display device of the present invention will be described. The display device of the present invention comprises the organic EL element of the present invention.
 本発明の表示装置は単色でも多色でもよいが、ここでは多色表示装置について説明する。多色表示装置の場合は発光層形成時のみシャドーマスクを設け、一面に蒸着法、キャスト法、スピンコート法、インクジェット法、印刷法等で膜を形成できる。 The display device of the present invention may be monochromatic or multicolor, but here, the multicolor display device will be described. In the case of a multicolor display device, a shadow mask is provided only at the time of forming a light emitting layer, and a film can be formed on one surface by vapor deposition, casting, spin coating, ink jet, printing, or the like.
 発光層のみパターニングを行う場合、その方法に限定はないが、好ましくは蒸着法、インクジェット法、スピンコート法、印刷法である。 In the case of patterning only the light emitting layer, the method is not limited, but is preferably a vapor deposition method, an ink jet method, a spin coating method, or a printing method.
 表示装置に具備される有機EL素子の構成は、必要に応じて上記の有機EL素子の構成例の中から選択される。 The configuration of the organic EL element included in the display device is selected from the above-described configuration examples of the organic EL element as necessary.
 また、有機EL素子の製造方法は、上記の本発明の有機EL素子の製造の一態様に示したとおりである。 Moreover, the manufacturing method of an organic EL element is as having shown in the one aspect | mode of manufacture of the organic EL element of said this invention.
 得られた多色表示装置に直流電圧を印加する場合には、陽極を+、陰極を-の極性として電圧2V~40V程度を印加すると発光が観測できる。また、逆の極性で電圧を印加しても電流は流れずに発光は全く生じない。更に交流電圧を印加する場合には、陽極が+、陰極が-の状態になったときのみ発光する。尚、印加する交流の波形は任意でよい。 When a DC voltage is applied to the obtained multicolor display device, light emission can be observed by applying a voltage of about 2V to 40V with the positive polarity of the anode and the negative polarity of the cathode. Further, even when a voltage is applied with the opposite polarity, no current flows and no light emission occurs. Further, when an AC voltage is applied, light is emitted only when the anode is in the + state and the cathode is in the-state. The alternating current waveform to be applied may be arbitrary.
 多色表示装置は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。表示デバイス、ディスプレイにおいて、青、赤、緑発光の3種の有機EL素子を用いることによりフルカラーの表示が可能となる。 The multicolor display device can be used as a display device, a display, and various light sources. In a display device or display, full-color display is possible by using three types of organic EL elements of blue, red, and green light emission.
 表示デバイス、ディスプレイとしては、テレビ、パソコン、モバイル機器、AV機器、文字放送表示、自動車内の情報表示等が挙げられる。特に静止画像や動画像を再生する表示装置として使用してもよく、動画再生用の表示装置として使用する場合の駆動方式は単純マトリクス(パッシブマトリクス)方式でもアクティブマトリクス方式でもどちらでもよい。 Display devices and displays include televisions, personal computers, mobile devices, AV devices, teletext displays, information displays in automobiles, and the like. In particular, it may be used as a display device for reproducing still images and moving images, and the driving method when used as a display device for reproducing moving images may be either a simple matrix (passive matrix) method or an active matrix method.
 発光光源としては家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、本発明はこれらに限定されない。 Light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, light sources for optical sensors, etc. The present invention is not limited to these examples.
 以下、本発明の有機EL素子を有する表示装置の一例を図面に基づいて説明する。 Hereinafter, an example of a display device having the organic EL element of the present invention will be described with reference to the drawings.
 図1は有機EL素子から構成される表示装置の一例を示した模式図である。有機EL素子の発光により画像情報の表示を行う、例えば、携帯電話等のディスプレイの模式図である。 FIG. 1 is a schematic view showing an example of a display device composed of organic EL elements. It is a schematic diagram of a display such as a mobile phone that displays image information by light emission of an organic EL element.
 ディスプレイ1は複数の画素を有する表示部A、画像情報に基づいて表示部Aの画像走査を行う制御部B等からなる。 The display 1 includes a display unit A having a plurality of pixels, a control unit B that performs image scanning of the display unit A based on image information, and the like.
 制御部Bは表示部Aと電気的に接続され、複数の画素それぞれに外部からの画像情報に基づいて走査信号と画像データ信号を送り、走査信号により走査線毎の画素が画像データ信号に応じて順次発光して画像走査を行って画像情報を表示部Aに表示する。 The control unit B is electrically connected to the display unit A, and sends a scanning signal and an image data signal to each of a plurality of pixels based on image information from the outside, and the pixels for each scanning line respond to the image data signal by the scanning signal. The image information is sequentially emitted to scan the image and display the image information on the display unit A.
 図2は表示部Aの模式図である。 FIG. 2 is a schematic diagram of the display unit A.
 表示部Aは基板上に、複数の走査線5及びデータ線6を含む配線部と複数の画素3等とを有する。表示部Aの主要な部材の説明を以下に行う。 The display unit A has a wiring unit including a plurality of scanning lines 5 and data lines 6 and a plurality of pixels 3 on the substrate. The main members of the display unit A will be described below.
 図においては、画素3の発光した光が白矢印方向(下方向)へ取り出される場合を示している。 In the figure, the light emitted from the pixel 3 is extracted in the direction of the white arrow (downward).
 配線部の走査線5及び複数のデータ線6はそれぞれ導電材料からなり、走査線5とデータ線6は格子状に直交して、直交する位置で画素3に接続している(詳細は図示していない)。 The scanning line 5 and the plurality of data lines 6 in the wiring portion are each made of a conductive material, and the scanning lines 5 and the data lines 6 are orthogonal to each other in a grid pattern and are connected to the pixels 3 at the orthogonal positions (details are illustrated). Not)
 画素3は走査線5から走査信号が印加されると、データ線6から画像データ信号を受け取り、受け取った画像データに応じて発光する。 When the scanning signal is applied from the scanning line 5, the pixel 3 receives the image data signal from the data line 6 and emits light according to the received image data.
 発光の色が赤領域の画素、緑領域の画素、青領域の画素を適宜同一基板上に並置することによって、フルカラー表示が可能となる。 A full color display can be achieved by appropriately arranging pixels in the red region, the green region, and the blue region on the same substrate.
 次に、画素の発光プロセスを説明する。 Next, the light emission process of the pixel will be described.
 図3は画素の模式図である。 FIG. 3 is a schematic diagram of a pixel.
 画素は有機EL素子10、スイッチングトランジスタ11、駆動トランジスタ12、コンデンサ13等を備えている。複数の画素に有機EL素子10として、赤色、緑色、青色発光の有機EL素子を用い、これらを同一基板上に並置することでフルカラー表示を行うことができる。 The pixel includes an organic EL element 10, a switching transistor 11, a driving transistor 12, a capacitor 13, and the like. A full color display can be performed by using red, green, and blue light emitting organic EL elements as the organic EL elements 10 in a plurality of pixels, and juxtaposing them on the same substrate.
 図3において、制御部Bからデータ線6を介してスイッチングトランジスタ11のドレインに画像データ信号が印加される。そして、制御部Bから走査線5を介してスイッチングトランジスタ11のゲートに走査信号が印加されると、スイッチングトランジスタ11の駆動がオンし、ドレインに印加された画像データ信号がコンデンサ13と駆動トランジスタ12のゲートに伝達される。 3, an image data signal is applied from the control unit B to the drain of the switching transistor 11 via the data line 6. When a scanning signal is applied from the control unit B to the gate of the switching transistor 11 via the scanning line 5, the driving of the switching transistor 11 is turned on, and the image data signal applied to the drain is supplied to the capacitor 13 and the driving transistor 12. Is transmitted to the gate.
 画像データ信号の伝達により、コンデンサ13が画像データ信号の電位に応じて充電されるとともに、駆動トランジスタ12の駆動がオンする。駆動トランジスタ12は、ドレインが電源ライン7に接続され、ソースが有機EL素子10の電極に接続されており、ゲートに印加された画像データ信号の電位に応じて電源ライン7から有機EL素子10に電流が供給される。 By transmitting the image data signal, the capacitor 13 is charged according to the potential of the image data signal, and the drive transistor 12 is turned on. The drive transistor 12 has a drain connected to the power supply line 7 and a source connected to the electrode of the organic EL element 10, and the power supply line 7 connects to the organic EL element 10 according to the potential of the image data signal applied to the gate. Current is supplied.
 制御部Bの順次走査により走査信号が次の走査線5に移ると、スイッチングトランジスタ11の駆動がオフする。しかし、スイッチングトランジスタ11の駆動がオフしてもコンデンサ13は充電された画像データ信号の電位を保持するので、駆動トランジスタ12の駆動はオン状態が保たれて、次の走査信号の印加が行われるまで有機EL素子10の発光が継続する。順次走査により次に走査信号が印加されたとき、走査信号に同期した次の画像データ信号の電位に応じて駆動トランジスタ12が駆動して有機EL素子10が発光する。 When the scanning signal moves to the next scanning line 5 by the sequential scanning of the control unit B, the driving of the switching transistor 11 is turned off. However, even if the driving of the switching transistor 11 is turned off, the capacitor 13 maintains the potential of the charged image data signal, so that the driving of the driving transistor 12 is kept on and the next scanning signal is applied. Until then, the light emission of the organic EL element 10 continues. When the scanning signal is next applied by sequential scanning, the driving transistor 12 is driven according to the potential of the next image data signal synchronized with the scanning signal, and the organic EL element 10 emits light.
 即ち、有機EL素子10の発光は、複数の画素それぞれの有機EL素子10に対して、アクティブ素子であるスイッチングトランジスタ11と駆動トランジスタ12を設けて、複数の画素3それぞれの有機EL素子10の発光を行っている。このような発光方法をアクティブマトリクス方式と呼んでいる。 That is, the light emission of the organic EL element 10 is performed by providing the switching transistor 11 and the drive transistor 12 which are active elements with respect to the organic EL element 10 of each of the plurality of pixels. It is carried out. Such a light emitting method is called an active matrix method.
 ここで、有機EL素子10の発光は複数の階調電位を持つ多値の画像データ信号による複数の階調の発光でもよいし、2値の画像データ信号による所定の発光量のオン、オフでもよい。また、コンデンサ13の電位の保持は次の走査信号の印加まで継続して保持してもよいし、次の走査信号が印加される直前に放電させてもよい。 Here, the light emission of the organic EL element 10 may be light emission of a plurality of gradations by a multi-value image data signal having a plurality of gradation potentials, or by turning on / off a predetermined light emission amount by a binary image data signal. Good. The potential of the capacitor 13 may be held continuously until the next scanning signal is applied, or may be discharged immediately before the next scanning signal is applied.
 本発明においては、上述したアクティブマトリクス方式に限らず、走査信号が走査されたときのみデータ信号に応じて有機EL素子を発光させるパッシブマトリクス方式の発光駆動でもよい。 In the present invention, not only the active matrix method described above, but also a passive matrix light emission drive in which an organic EL element emits light according to a data signal only when a scanning signal is scanned.
 図4はパッシブマトリクス方式による表示装置の模式図である。図4において、複数の走査線5と複数の画像データ線6が画素3を挟んで対向して格子状に設けられている。 FIG. 4 is a schematic view of a passive matrix display device. In FIG. 4, a plurality of scanning lines 5 and a plurality of image data lines 6 are provided in a lattice shape so as to face each other with the pixel 3 interposed therebetween.
 順次走査により走査線5の走査信号が印加されたとき、印加された走査線5に接続している画素3が画像データ信号に応じて発光する。 When the scanning signal of the scanning line 5 is applied by sequential scanning, the pixel 3 connected to the applied scanning line 5 emits light according to the image data signal.
 パッシブマトリクス方式では画素3にアクティブ素子が無く、製造コストの低減が計れる。 In the passive matrix method, there is no active element in the pixel 3, and the manufacturing cost can be reduced.
 《照明装置》
 本発明の照明装置について説明する。本発明の照明装置は上記有機EL素子を有する。
《Lighting device》
The lighting device of the present invention will be described. The illuminating device of this invention has the said organic EL element.
 本発明の有機EL素子に共振器構造を持たせた有機EL素子として用いてもよく、このような共振器構造を有した有機EL素子の使用目的としては、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これらに限定されない。また、レーザー発振をさせることにより上記用途に使用してもよい。 The organic EL element of the present invention may be used as an organic EL element having a resonator structure. The purpose of use of the organic EL element having such a resonator structure is as follows. The light source of a machine, the light source of an optical communication processing machine, the light source of a photosensor, etc. are mentioned, However, It is not limited to these. Moreover, you may use for the said use by making a laser oscillation.
 また、本発明の有機EL素子は照明用や露光光源のような一種のランプとして使用してもよいし、画像を投影するタイプのプロジェクション装置や、静止画像や動画像を直接視認するタイプの表示装置(ディスプレイ)として使用してもよい。 Further, the organic EL element of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a display for directly viewing a still image or a moving image. It may be used as a device (display).
 動画再生用の表示装置として使用する場合の駆動方式は、単純マトリクス(パッシブマトリクス)方式でもアクティブマトリクス方式でもどちらでもよい。または、異なる発光色を有する本発明の有機EL素子を2種以上使用することにより、フルカラー表示装置を作製することが可能である。 The drive method when used as a display device for moving image reproduction may be either a simple matrix (passive matrix) method or an active matrix method. Alternatively, a full-color display device can be manufactured by using two or more organic EL elements of the present invention having different emission colors.
 また、本発明の有機EL材料は照明装置として、実質白色の発光を生じる有機EL素子に適用できる。複数の発光材料により複数の発光色を同時に発光させて混色により白色発光を得る。複数の発光色の組み合わせとしては、青色、緑色、青色の3原色の3つの発光極大波長を含有させたものでもよいし、青色と黄色、青緑と橙色等の補色の関係を利用した2つの発光極大波長を含有したものでもよい。 Moreover, the organic EL material of the present invention can be applied to an organic EL element that emits substantially white light as a lighting device. A plurality of light emitting colors are simultaneously emitted by a plurality of light emitting materials to obtain white light emission by color mixing. The combination of a plurality of emission colors may include three emission maximum wavelengths of the three primary colors of blue, green, and blue, or two using the relationship of complementary colors such as blue and yellow, blue green and orange, etc. The thing containing the light emission maximum wavelength may be used.
 また複数の発光色を得るための発光材料の組み合わせは、複数のリン光または蛍光で発光する材料を複数組み合わせたもの、蛍光またはリン光で発光する発光材料と、発光材料からの光を励起光として発光する色素材料との組み合わせたもののいずれでもよいが、本発明に係る白色有機EL素子においては、発光ドーパントを複数組み合わせ混合するだけでよい。 In addition, a combination of light emitting materials for obtaining a plurality of emission colors is a combination of a plurality of phosphorescent or fluorescent materials, a light emitting material that emits fluorescence or phosphorescence, and light from the light emitting material as excitation light. Any of those combined with a dye material that emits light may be used, but in the white organic EL device according to the present invention, only a combination of a plurality of light-emitting dopants may be mixed.
 発光層、正孔輸送層あるいは電子輸送層等の形成時のみマスクを設け、マスクにより塗り分ける等単純に配置するだけでよく、他層は共通であるのでマスク等のパターニングは不要であり、一面に蒸着法、キャスト法、スピンコート法、インクジェット法、印刷法等で例えば電極膜を形成でき、生産性も向上する。 It is only necessary to provide a mask only when forming a light emitting layer, a hole transport layer, an electron transport layer, etc., and simply arrange them separately by coating with the mask. Since other layers are common, patterning of the mask or the like is not necessary. In addition, for example, an electrode film can be formed by a vapor deposition method, a cast method, a spin coating method, an ink jet method, a printing method, or the like, and productivity is also improved.
 この方法によれば、複数色の発光素子をアレー状に並列配置した白色有機EL装置と異なり、素子自体が発光白色である。 According to this method, unlike the white organic EL device in which light emitting elements of a plurality of colors are arranged in parallel in an array, the elements themselves are luminescent white.
 発光層に用いる発光材料としては特に制限はなく、例えば、液晶表示素子におけるバックライトであれば、CF(カラーフィルター)特性に対応した波長範囲に適合するように、本発明に係る金属錯体、また公知の発光材料の中から任意のものを選択して組み合わせて白色化すればよい。 There is no restriction | limiting in particular as a luminescent material used for a light emitting layer, For example, if it is a backlight in a liquid crystal display element, the metal complex which concerns on this invention so that it may suit the wavelength range corresponding to CF (color filter) characteristic, Any one of known luminescent materials may be selected and combined to whiten.
 《本発明の照明装置の一態様》
 本発明の有機EL素子を具備した、本発明の照明装置の一態様について説明する。
<< One Embodiment of Lighting Device of the Present Invention >>
One aspect of the lighting device of the present invention that includes the organic EL element of the present invention will be described.
 本発明の有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを陰極上に重ねて透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止し、図5、図6に示すような照明装置を形成することができる。 The non-light emitting surface of the organic EL device of the present invention is covered with a glass case, a glass substrate having a thickness of 300 μm is used as a sealing substrate, and an epoxy-based photocurable adhesive (LUX TRACK manufactured by Toagosei Co., Ltd.) is used as a sealing material. LC0629B) is applied, and this is overlaid on the cathode and brought into close contact with the transparent support substrate, irradiated with UV light from the glass substrate side, cured and sealed, and an illumination device as shown in FIGS. Can be formed.
 図5は、照明装置の概略図を示し、本発明の有機EL素子101はガラスカバー102で覆われている(尚、ガラスカバーでの封止作業は、有機EL素子101を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った。)。 FIG. 5 shows a schematic diagram of a lighting device, and the organic EL element 101 of the present invention is covered with a glass cover 102 (in the sealing operation with the glass cover, the organic EL element 101 is brought into contact with the atmosphere. And a glove box under a nitrogen atmosphere (in an atmosphere of high-purity nitrogen gas having a purity of 99.999% or more).
 図6は、照明装置の断面図を示し、図6において、105は陰極、106は有機EL層、107は透明電極付きガラス基板を示す。尚、ガラスカバー102内には窒素ガス108が充填され、捕水剤109が設けられている。 FIG. 6 shows a cross-sectional view of the lighting device. In FIG. 6, 105 denotes a cathode, 106 denotes an organic EL layer, and 107 denotes a glass substrate with a transparent electrode. The glass cover 102 is filled with nitrogen gas 108 and a water catching agent 109 is provided.
 以下、実施例により本発明を詳細に説明するが、本発明はこれらに限定されない。 Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited thereto.
 また、実施例に用いられる化合物の構造を以下に示す。 The structure of the compound used in the examples is shown below.
Figure JPOXMLDOC01-appb-C000037
Figure JPOXMLDOC01-appb-C000037
Figure JPOXMLDOC01-appb-C000038
Figure JPOXMLDOC01-appb-C000038
 実施例1
 《有機EL素子1-1の作製》
 陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm成膜した基板(NHテクノグラス社製NA-45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
Example 1
<< Production of Organic EL Element 1-1 >>
Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm × 100 mm × 1.1 mm glass substrate as a positive electrode on a 100 mm × 100 mm × 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
 この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用い、3000rpm、30秒の条件でスピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
 この基板を窒素雰囲気下に移し、正孔輸送層上に、50mgのHT-26を10mlのトルエンに溶解した溶液を1000rpm、30秒の条件で正孔輸送層上にスピンコーティングし、薄膜を形成した。 This substrate was transferred to a nitrogen atmosphere, and a solution in which 50 mg of HT-26 was dissolved in 10 ml of toluene was spin-coated on the hole transport layer at 1000 rpm for 30 seconds to form a thin film on the hole transport layer. did.
 更に180秒間紫外光を照射し、光重合・架橋を行い、膜厚約25nmの第二正孔輸送層とした。 Further, ultraviolet light was irradiated for 180 seconds to carry out photopolymerization / crosslinking to form a second hole transport layer having a film thickness of about 25 nm.
 この第二正孔輸送層上に、100mgのHost-38と5mgのD-1と5mgのD-24を10mlのトルエンに溶解した溶液を用い、1000rpm、30秒の条件でスピンコート法により成膜した。 On this second hole transport layer, a solution obtained by dissolving 100 mg Host-38, 5 mg D-1 and 5 mg D-24 in 10 ml toluene was formed by spin coating at 1000 rpm for 30 seconds. Filmed.
 更に100℃で加熱しながら15秒間紫外光を照射し、光重合・架橋を行わせ、更に真空中150℃で30分間加熱を行って、膜厚約50nmの発光層とした。 Further, ultraviolet light was irradiated for 15 seconds while heating at 100 ° C. to cause photopolymerization / crosslinking, and further heating was performed at 150 ° C. for 30 minutes in a vacuum to obtain a light emitting layer having a film thickness of about 50 nm.
 次にこの発光層上に、50mgのET-3を10mlのヘキサフルオロイソプロパノール(HFIP)に溶解した溶液を用いて、1000rpm、30秒の条件でスピンコート法により薄膜を形成した。更に60℃で1時間真空乾燥し、膜厚約30nmの電子輸送層とした。 Next, a thin film was formed on this light emitting layer by spin coating using a solution obtained by dissolving 50 mg of ET-3 in 10 ml of hexafluoroisopropanol (HFIP) at 1000 rpm for 30 seconds. Furthermore, it vacuum-dried at 60 degreeC for 1 hour, and was set as the electron carrying layer with a film thickness of about 30 nm.
 続いて、この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10-4Paまで減圧した後、陰極バッファー層としてフッ化リチウムを0.4nm、更に陰極としてアルミニウムを110nm蒸着して陰極を形成し、有機EL素子1-1を作製した。 Subsequently, this substrate was fixed to a substrate holder of a vacuum deposition apparatus, the vacuum chamber was depressurized to 4 × 10 −4 Pa, lithium fluoride 0.4 nm was deposited as a cathode buffer layer, and aluminum was deposited 110 nm as a cathode. Thus, a cathode was formed, and an organic EL element 1-1 was produced.
 《有機EL素子1-2の作製》
 有機EL素子1-1の作製と同様に第二正孔輸送層までを作製した。次にこの第二正孔輸送層上に、100mgのHost-38と10mgのD-1を20mlのトルエンに溶解した溶液を用い、2000rpm、30秒の条件でスピンコート法により成膜した。
<< Production of Organic EL Element 1-2 >>
Similar to the production of the organic EL device 1-1, up to the second hole transport layer was produced. Next, a film obtained by dissolving 100 mg of Host-38 and 10 mg of D-1 in 20 ml of toluene was formed on this second hole transport layer by spin coating at 2000 rpm for 30 seconds.
 更に100℃で加熱しながら15秒間紫外光を照射し、光重合・架橋を行わせ、次いで、真空中150℃で1時間加熱を行って、膜厚約20nmの第一発光層とした。 Further, ultraviolet light was irradiated for 15 seconds while heating at 100 ° C. to cause photopolymerization / crosslinking, followed by heating at 150 ° C. for 1 hour in a vacuum to obtain a first light emitting layer having a thickness of about 20 nm.
 更に、この第一発光層上に、100mgのHost-38と10mgのD-24を10mlのトルエンに溶解した溶液を用い、2500rpm、30秒の条件でスピンコート法により成膜した。 Further, a film obtained by dissolving 100 mg of Host-38 and 10 mg of D-24 in 10 ml of toluene was formed on this first light emitting layer by spin coating under the conditions of 2500 rpm and 30 seconds.
 更に100℃で加熱しながら15秒間紫外光を照射し、光重合・架橋を行わせ、真空中150℃で1時間加熱を行って、膜厚約30nmの第二発光層とした。 Further, ultraviolet light was irradiated for 15 seconds while heating at 100 ° C., photopolymerization and crosslinking were performed, and heating was performed in vacuum at 150 ° C. for 1 hour to obtain a second light emitting layer having a thickness of about 30 nm.
 続いて、有機EL素子1-1と同様に電子輸送層、陰極バッファー層、陰極を形成し、有機EL素子1-2を作製した。 Subsequently, an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 1-1 to produce an organic EL element 1-2.
 《有機EL素子1-3の作製》
 有機EL素子1-2において、表1のように材料を変更した以外は同様にして有機EL素子1-3を作製した。
<< Preparation of organic EL element 1-3 >>
In the organic EL element 1-2, an organic EL element 1-3 was produced in the same manner except that the material was changed as shown in Table 1.
 《有機EL素子1-1~1-3の評価》
 得られた有機EL素子1-1~1-3を評価するに際しては、作製後の各有機EL素子の比発光面をガラスカバーで覆い、ガラスカバーと有機EL素子が作製されたガラス基板とが接触するガラスカバー側の周囲にシール剤としてエポキシ系光硬化型接着剤(東亞合成社製ラクストラックLC0629B)を適用し、これを上記陰極側に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して硬化させ、封止して、図5、図6に示すような照明装置を形成して評価した。
<< Evaluation of Organic EL Elements 1-1 to 1-3 >>
When evaluating the obtained organic EL elements 1-1 to 1-3, the specific light emission surface of each organic EL element after production was covered with a glass cover, and the glass cover and the glass substrate on which the organic EL element was produced were separated. An epoxy-based photo-curing adhesive (Luxtrac LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealant around the glass cover side that comes into contact with the transparent support substrate so as to overlap the cathode side, and the glass substrate side. Then, it was cured by irradiation with UV light, sealed, and evaluated by forming an illumination device as shown in FIGS.
 以下のように有機EL素子の評価を行った。 The organic EL element was evaluated as follows.
 (外部取り出し量子効率)
 有機EL素子を室温(約23℃~25℃)下、2.5mA/cmの定電流条件下で発光させ、発光開始直後の発光輝度(L)[cd/m]を測定することにより外部取り出し量子効率(η)を算出した。
(External quantum efficiency)
The organic EL device is allowed to emit light at room temperature (about 23 ° C. to 25 ° C.) under a constant current condition of 2.5 mA / cm 2 , and the light emission luminance (L) [cd / m 2 ] immediately after the start of light emission is measured. The external extraction quantum efficiency (η) was calculated.
 ここで、発光輝度の測定はCS-1000(コニカミノルタセンシング製)を用いた。外部取り出し量子効率は有機EL素子1-1を100とする相対値で表した。 Here, CS-1000 (manufactured by Konica Minolta Sensing) was used for measurement of light emission luminance. The external extraction quantum efficiency was expressed as a relative value where the organic EL element 1-1 was 100.
 (電圧)
 2.5mA/cmの定電流条件下で発光させ、発光開始直後の電圧を測定した。電圧は有機EL素子1-1を100とする相対値で表した。
(Voltage)
Light was emitted under a constant current condition of 2.5 mA / cm 2 , and the voltage immediately after the start of light emission was measured. The voltage was expressed as a relative value where the organic EL element 1-1 was 100.
 得られた結果を表1に示す。 Table 1 shows the obtained results.
Figure JPOXMLDOC01-appb-T000039
Figure JPOXMLDOC01-appb-T000039
 表1から、比較の素子に比べて、本発明の素子は、外部取り出し量子効率が高く、且つ、低駆動電圧であることが明らかである。 From Table 1, it is clear that the device of the present invention has a high external extraction quantum efficiency and a low driving voltage as compared with the comparative device.
 実施例2
 《有機EL素子2-1の作製》
 陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm成膜した基板(NHテクノグラス社製NA-45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
Example 2
<< Preparation of organic EL element 2-1 >>
Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm × 100 mm × 1.1 mm glass substrate as a positive electrode on a 100 mm × 100 mm × 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
 この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用い、3000rpm、30秒の条件でスピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
 この基板を窒素雰囲気下に移し、正孔輸送層上に正孔輸送材料3を5mgと正孔輸送材料4を45mgとを10mlのトルエンに溶解した混合溶液を用い、1000rpm、30秒の条件で正孔輸送層上にスピンコーティングし、薄膜を形成した。 The substrate was transferred to a nitrogen atmosphere, and a mixed solution prepared by dissolving 5 mg of the hole transport material 3 and 45 mg of the hole transport material 4 in 10 ml of toluene on the hole transport layer was used at 1000 rpm for 30 seconds. A thin film was formed by spin coating on the hole transport layer.
 更に180秒間紫外光を照射し、光重合・架橋を行い、膜厚約25nmの第二正孔輸送層とした。 Further, ultraviolet light was irradiated for 180 seconds to carry out photopolymerization / crosslinking to form a second hole transport layer having a film thickness of about 25 nm.
 この第二正孔輸送層上に、100mgのHost-52と0.1mgのD-6と、10mgのD-25を10mlのジクロロベンゼンに溶解した溶液を用い、1500rpm、30秒の条件でスピンコート法により成膜した。更に真空中150℃で1時間加熱を行って、膜厚約50nmの第一発光層とした。 On this second hole transport layer, spin was performed at 1500 rpm for 30 seconds using a solution of 100 mg Host-52, 0.1 mg D-6 and 10 mg D-25 dissolved in 10 ml dichlorobenzene. A film was formed by a coating method. Furthermore, it heated at 150 degreeC in vacuum for 1 hour, and was set as the 1st light emitting layer with a film thickness of about 50 nm.
 この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10-4Paまで減圧した後、第一発光層上に、ET-8を20nm蒸着して第一電子輸送層を形成した。 This substrate was fixed to a substrate holder of a vacuum deposition apparatus, and the vacuum chamber was depressurized to 4 × 10 −4 Pa, and then ET-8 was deposited to a thickness of 20 nm on the first light emitting layer to form a first electron transport layer. .
 続いて第一電子輸送層上にET-7を10nm蒸着して第二電子輸送層とした。 Subsequently, 10 nm of ET-7 was deposited on the first electron transport layer to form a second electron transport layer.
 更に、陰極バッファー層としてフッ化リチウムを0.5nm、陰極としてアルミニウムを110nm蒸着して陰極を形成し、有機EL素子2-1を作製した。 Further, 0.5 nm of lithium fluoride was deposited as a cathode buffer layer and 110 nm of aluminum was deposited as a cathode to form a cathode, whereby an organic EL element 2-1 was produced.
 《有機EL素子2-2の作製》:本発明
 有機EL素子2-1と同様に第二正孔輸送層までを作製した。
<< Preparation of Organic EL Element 2-2 >>: Present Invention Up to the second hole transport layer was prepared in the same manner as the organic EL element 2-1.
 次にこの第二正孔輸送層上に、100mgのHost-52と5mgのD-6を20mlのジクロロベンゼンに溶解した溶液を用い、2500rpm、30秒の条件でスピンコート法により成膜した。 Next, a film obtained by dissolving 100 mg of Host-52 and 5 mg of D-6 in 20 ml of dichlorobenzene was formed on this second hole transport layer by spin coating at 2500 rpm for 30 seconds.
 更に真空中150℃で1時間加熱を行って、膜厚約20nmの第一発光層とした。 Further, heating was performed in vacuum at 150 ° C. for 1 hour to obtain a first light emitting layer having a thickness of about 20 nm.
 更にこの第一発光層上に、100mgのHost-14と10mgのD-25を10mlの酢酸エチルに溶解した溶液を用い、2500rpm、30秒の条件でスピンコート法により成膜し、第二発光層を形成した。 Further, a film obtained by dissolving 100 mg Host-14 and 10 mg D-25 in 10 ml ethyl acetate on this first light emitting layer by spin coating at 2500 rpm for 30 seconds was used to form a second light emitting layer. A layer was formed.
 続いて、有機EL素子2-1と同様に電子輸送層、陰極バッファー層、陰極を形成し、有機EL素子2-2を作製した。 Subsequently, an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 2-1, and an organic EL element 2-2 was produced.
 《有機EL素子2-3の作製》
 有機EL素子2-2の作製において、表2に記載のように材料の組み合わせを変更した以外は同様にして有機EL素子2-3を作製した。
<< Preparation of organic EL element 2-3 >>
An organic EL element 2-3 was produced in the same manner as in the production of the organic EL element 2-2 except that the combination of materials was changed as shown in Table 2.
 《有機EL素子2-1~2-3の評価》
 得られた有機EL素子2-1~2-3を評価するに際しては、実施例1と同様に封止し、図5、図6に示すような照明装置を形成して、外部取り出し量子効率、電圧、寿命について評価した。
<< Evaluation of organic EL elements 2-1 to 2-3 >>
When evaluating the obtained organic EL elements 2-1 to 2-3, sealing was performed in the same manner as in Example 1, and an illumination device as shown in FIGS. The voltage and life were evaluated.
 尚、発光寿命の評価は下記のように行った。 Incidentally, the evaluation of the light emission lifetime was performed as follows.
 《発光寿命》
 有機EL素子を室温下、2.5mA/cmの定電流条件下による連続発光を行い、初期輝度の半分の輝度になるのに要する時間(τ1/2)を測定した。発光寿命は有機EL素子2-1を100と設定する相対値で表した。
<Luminescent life>
The organic EL device continuously emitted light at room temperature under a constant current condition of 2.5 mA / cm 2 , and the time (τ 1/2 ) required to reach half the initial luminance was measured. The light emission lifetime was expressed as a relative value at which the organic EL element 2-1 was set to 100.
 得られた結果を表2に示す。 Table 2 shows the results obtained.
Figure JPOXMLDOC01-appb-T000040
Figure JPOXMLDOC01-appb-T000040
 表2から、比較の素子に比べて、本発明の素子は、外部取り出し量子効率が高く、低駆動電圧であり、且つ、長寿命であることが明らかである。 From Table 2, it is clear that the device of the present invention has a high external extraction quantum efficiency, a low driving voltage, and a long life compared to the comparative device.
 実施例3
 《有機EL素子3-1の作製》
 陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm成膜した基板(NHテクノグラス社製NA-45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
Example 3
<< Preparation of organic EL element 3-1 >>
Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm × 100 mm × 1.1 mm glass substrate as a positive electrode on a 100 mm × 100 mm × 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
 この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用い、3000rpm、30秒の条件でスピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
 この基板を窒素雰囲気下に移し、正孔輸送層上に、50mgのADS254BE (American Dye Source社製)を10mlのトルエンに溶解した溶液を1000rpm、30秒の条件で正孔輸送層上にスピンコーティングし、薄膜を形成し、更に真空中60℃で1時間加熱を行って、膜厚約25nmの第二正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a solution obtained by dissolving 50 mg of ADS254BE (American Dye Source) in 10 ml of toluene was spin-coated on the hole transport layer at 1000 rpm for 30 seconds on the hole transport layer. Then, a thin film was formed, and further heated in a vacuum at 60 ° C. for 1 hour to obtain a second hole transport layer having a thickness of about 25 nm.
 この第二正孔輸送層上に、100mgのHost-25と5mgのD-9と5mgのD-25を10mlのトルエンに溶解した溶液を用い、1000rpm、30秒の条件でスピンコート法により成膜し、更に真空中100℃で1時間加熱を行って、膜厚約50nmの発光層とした。 On this second hole transport layer, a solution prepared by dissolving 100 mg Host-25, 5 mg D-9 and 5 mg D-25 in 10 ml toluene was formed by spin coating at 1000 rpm for 30 seconds. The film was further heated in a vacuum at 100 ° C. for 1 hour to obtain a light-emitting layer having a thickness of about 50 nm.
 この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10-4Paまで減圧した後、発光層上に、電子輸送材料3を30nm、続いて陰極バッファー層としてフッ化リチウムを0.5nm、更に陰極としてアルミニウムを110nm蒸着して陰極を形成し、有機EL素子3-1を作製した。 This substrate was fixed to a substrate holder of a vacuum deposition apparatus, and the vacuum chamber was depressurized to 4 × 10 −4 Pa, and then the electron transporting material 3 was 30 nm on the light emitting layer, and then lithium fluoride was 0 as a cathode buffer layer. An organic EL element 3-1 was fabricated by depositing aluminum at 110 nm as a cathode and depositing 110 nm of aluminum as the cathode.
 《有機EL素子3-2の作製》
 有機EL素子3-1と同様に第二正孔輸送層までを作製した。
<< Preparation of organic EL element 3-2 >>
The layers up to the second hole transport layer were prepared in the same manner as the organic EL element 3-1.
 次にこの第二正孔輸送層上に、100mgのHost-25と5mgのD-9を10mlのトルエンに溶解した溶液を用い、2000rpm、30秒の条件でスピンコート法により成膜し、更に真空中150℃で1時間加熱を行って、第一発光層とした。 Next, a film obtained by dissolving 100 mg of Host-25 and 5 mg of D-9 in 10 ml of toluene was formed on this second hole transport layer by spin coating at 2000 rpm for 30 seconds. Heating was performed in vacuum at 150 ° C. for 1 hour to obtain a first light emitting layer.
 得られた第一発光層上に、100mgのHost-16と10mgのD-25を40mlのヘキサフルオロイソプロパノール(HFIP)に溶解した溶液を用い、1000rpm、30秒の条件でスピンコート法により成膜し、60℃で1時間真空乾燥して第二発光層を形成した。 A film obtained by dissolving 100 mg Host-16 and 10 mg D-25 in 40 ml hexafluoroisopropanol (HFIP) is formed on the first light-emitting layer by spin coating at 1000 rpm for 30 seconds. And it vacuum-dried at 60 degreeC for 1 hour, and formed the 2nd light emitting layer.
 続いて、有機EL素子3-1と同様に電子輸送層、陰極バッファー層、陰極を形成し、有機EL素子3-2を作製した。 Subsequently, an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 3-1, and an organic EL element 3-2 was produced.
 《有機EL素子3-3及び3-4の作製》
 有機EL素子3-2において、表3に記載のように材料の組み合わせを変更した以外は同様にして有機EL素子3-3及び3-4を各々作製した。
<< Preparation of organic EL elements 3-3 and 3-4 >>
In the organic EL element 3-2, organic EL elements 3-3 and 3-4 were respectively produced in the same manner except that the combination of materials was changed as shown in Table 3.
 《有機EL素子3-1~3-4の評価》
 得られた有機EL素子3-1~3-4を評価するに際しては、実施例1と同様に封止し、図5、図6に示すような照明装置を形成して、実施例2と同様に、外部取り出し量子効率、電圧、寿命について評価した。
<< Evaluation of organic EL elements 3-1 to 3-4 >>
When the obtained organic EL elements 3-1 to 3-4 were evaluated, they were sealed in the same manner as in Example 1 to form an illuminating device as shown in FIGS. 5 and 6, and the same as in Example 2. The external extraction quantum efficiency, voltage, and lifetime were evaluated.
 得られた結果を表3に示す。 Table 3 shows the obtained results.
Figure JPOXMLDOC01-appb-T000041
Figure JPOXMLDOC01-appb-T000041
 表3から、比較の素子に比べて、本発明の素子は、外部取り出し量子効率が高く、低駆動電圧であり、且つ、長寿命であることが明らかである。 From Table 3, it is clear that the device of the present invention has a high external extraction quantum efficiency, a low driving voltage, and a long life compared to the comparative device.
 実施例4
 《有機EL素子4-1の作製》
 陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm成膜した基板(NHテクノグラス社製NA-45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
Example 4
<< Preparation of organic EL element 4-1 >>
Patterning was performed on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) on which a 100 nm × 100 mm × 1.1 mm glass substrate as a positive electrode on a 100 mm × 100 mm × 1.1 mm glass substrate was formed, and then this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
 この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用い、3000rpm、30秒の条件でスピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
 この基板を窒素雰囲気下に移し、正孔輸送層上に、100mgのHT-29を10mlのトルエンに溶解した溶液を3000rpm、30秒の条件で正孔輸送層上にスピンコーティングし、薄膜を形成した。 This substrate was transferred to a nitrogen atmosphere, and a solution in which 100 mg of HT-29 was dissolved in 10 ml of toluene was spin-coated on the hole transport layer at 3000 rpm for 30 seconds on the hole transport layer to form a thin film. did.
 更に180秒間紫外光を照射し、光重合・架橋を行い、第二正孔輸送層とした。 Further, ultraviolet light was irradiated for 180 seconds to carry out photopolymerization / crosslinking to form a second hole transport layer.
 この第二正孔輸送層上に、100mgのHost-53と15mgのD-30と0.5mgのD-10を10mlのトルエンに溶解した溶液を用い、600rpm、30秒の条件でスピンコート法により成膜した。 On this second hole transport layer, a solution obtained by dissolving 100 mg of Host-53, 15 mg of D-30 and 0.5 mg of D-10 in 10 ml of toluene was spin-coated at 600 rpm for 30 seconds. Was formed.
 更に100℃で加熱しながら15秒間紫外光を照射し、光重合・架橋を行わせ、更に真空中150℃で30分間加熱を行って、膜厚約60nmの発光層とした。 Further, ultraviolet light was irradiated for 15 seconds while heating at 100 ° C. to cause photopolymerization / crosslinking, and further heating was performed at 150 ° C. for 30 minutes in a vacuum to obtain a light emitting layer having a film thickness of about 60 nm.
 次にこの発光層上に、50mgのET-10を10mlのヘキサフルオロイソプロパノール(HFIP)に溶解した溶液を用いて、1000rpm、30秒の条件でスピンコート法により薄膜を形成した。更に60℃で1時間真空乾燥し、膜厚約30nmの電子輸送層とした。 Next, a thin film was formed on the light emitting layer by spin coating using a solution obtained by dissolving 50 mg of ET-10 in 10 ml of hexafluoroisopropanol (HFIP) at 1000 rpm for 30 seconds. Furthermore, it vacuum-dried at 60 degreeC for 1 hour, and was set as the electron carrying layer with a film thickness of about 30 nm.
 続いて、この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10-4Paまで減圧した後、陰極バッファー層としてフッ化リチウムを0.4nm、更に陰極としてアルミニウムを110nm蒸着して陰極を形成し、有機EL素子4-1を作製した。 Subsequently, this substrate was fixed to a substrate holder of a vacuum deposition apparatus, the vacuum chamber was depressurized to 4 × 10 −4 Pa, lithium fluoride 0.4 nm was deposited as a cathode buffer layer, and aluminum was deposited 110 nm as a cathode. Thus, a cathode was formed to produce an organic EL element 4-1.
 《有機EL素子4-2の作製》
 有機EL素子4-1の作製と同様に第二正孔輸送層までを作製した。
<< Preparation of organic EL element 4-2 >>
Similarly to the production of the organic EL element 4-1, up to the second hole transport layer was produced.
 次にこの第二正孔輸送層上に、有機EL素子4-1で発光層を形成するのに用いた溶液と同様の溶液を用い、3000rpm、30秒の条件でスピンコート法により成膜し、100℃で加熱しながら15秒間紫外光を照射し、光重合・架橋を行わせ、更に真空中150℃で30分間加熱を行って、膜厚約30nmの第一発光層とした。 Next, a film similar to the solution used for forming the light emitting layer in the organic EL element 4-1 was used on this second hole transport layer, and the film was formed by spin coating at 3000 rpm for 30 seconds. While being heated at 100 ° C., ultraviolet light was irradiated for 15 seconds to cause photopolymerization / crosslinking, and further heating was performed in vacuum at 150 ° C. for 30 minutes to obtain a first light emitting layer having a thickness of about 30 nm.
 続いて、同溶液を用いて第一発光層上に、3000rpm、30秒の条件でスピンコート法により成膜し、100℃で加熱しながら15秒間紫外光を照射し、光重合・架橋を行わせ、更に真空中150℃で30分間加熱を行って、膜厚約30nmの第二発光層とした。 Subsequently, using the same solution, a film was formed on the first light emitting layer by spin coating at 3000 rpm for 30 seconds, and irradiated with ultraviolet light for 15 seconds while heating at 100 ° C. to perform photopolymerization and crosslinking. Further, heating was performed at 150 ° C. for 30 minutes in a vacuum to obtain a second light emitting layer having a thickness of about 30 nm.
 続いて、有機EL素子4-1と同様に電子輸送層、陰極バッファー層、陰極を形成し、有機EL素子4-2を作製した。 Subsequently, an electron transport layer, a cathode buffer layer, and a cathode were formed in the same manner as in the organic EL element 4-1, and an organic EL element 4-2 was produced.
 《有機EL素子4-1、4-2の評価》
 得られた有機EL素子4-1、4-2を評価するに際しては、作製後の各有機EL素子の比発光面をガラスカバーで覆い、ガラスカバーと有機EL素子が作製されたガラス基板とが接触するガラスカバー側の周囲にシール剤としてエポキシ系光硬化型接着剤(東亞合成社製ラクストラックLC0629B)を適用し、これを上記陰極側に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して硬化させ、封止して、図5、図6に示すような照明装置を形成して評価した。
<< Evaluation of Organic EL Elements 4-1, 4-2 >>
When evaluating the obtained organic EL elements 4-1, 4-2, the specific light emission surface of each organic EL element after production was covered with a glass cover, and the glass cover and the glass substrate on which the organic EL element was produced were separated. An epoxy-based photo-curing adhesive (Luxtrac LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealant around the glass cover side that comes into contact with the transparent support substrate so as to overlap the cathode side, and the glass substrate side. Then, it was cured by irradiation with UV light, sealed, and evaluated by forming an illumination device as shown in FIGS.
 以下のように有機EL素子の評価を行った。 The organic EL element was evaluated as follows.
 (外部取り出し量子効率)
 有機EL素子を室温(約23℃~25℃)下、2.5mA/cmの定電流条件下で発光させ、発光開始直後の発光輝度(L)[cd/m]を測定することにより外部取り出し量子効率(η)を算出した。
(External quantum efficiency)
The organic EL device is allowed to emit light at room temperature (about 23 ° C. to 25 ° C.) under a constant current condition of 2.5 mA / cm 2 , and the light emission luminance (L) [cd / m 2 ] immediately after the start of light emission is measured. The external extraction quantum efficiency (η) was calculated.
 ここで、発光輝度の測定はCS-1000(コニカミノルタセンシング製)を用いた。外部取り出し量子効率は有機EL素子4-1を100とする相対値で表した。 Here, CS-1000 (manufactured by Konica Minolta Sensing) was used for measurement of light emission luminance. The external extraction quantum efficiency was expressed as a relative value where the organic EL element 4-1 was 100.
 (電圧)
 2.5mA/cmの定電流条件下で発光させ、発光開始直後の電圧を測定した。電圧は有機EL素子4-1を100とする相対値で表した。
(Voltage)
Light was emitted under a constant current condition of 2.5 mA / cm 2 , and the voltage immediately after the start of light emission was measured. The voltage was expressed as a relative value where the organic EL element 4-1 was 100.
 得られた結果を表4に示す。 Table 4 shows the obtained results.
Figure JPOXMLDOC01-appb-T000042
Figure JPOXMLDOC01-appb-T000042
 表4から、比較の素子に比べて、本発明の素子は、外部取り出し量子効率が高く、且つ、低駆動電圧であることが明らかである。 From Table 4, it is clear that the device of the present invention has a high external extraction quantum efficiency and a low driving voltage compared to the comparative device.
 実施例5
 《有機EL素子5-1の作製》
 陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm成膜した基板(NHテクノグラス社製NA45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
Example 5
<< Preparation of organic EL element 5-1 >>
Transparent support provided with this ITO transparent electrode after patterning on a substrate (NH45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a glass substrate of 100 mm × 100 mm × 1.1 mm as an anode The substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
 この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により成膜した後、200℃にて1時間乾燥し、膜厚30nmの第一正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. Then, the film was formed by spin coating and then dried at 200 ° C. for 1 hour to provide a first hole transport layer having a thickness of 30 nm.
 この基板を窒素雰囲気下に移し、第一正孔輸送層上に、50mgの正孔輸送材料2を10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により成膜し、180秒間紫外光を照射し、光重合・架橋を行った後、60℃で1時間真空乾燥し第二正孔輸送層を形成した。 This substrate was transferred to a nitrogen atmosphere, and a solution prepared by dissolving 50 mg of the hole transport material 2 in 10 ml of toluene was formed on the first hole transport layer by spin coating at 1000 rpm for 30 seconds. After irradiating with ultraviolet light for 180 seconds to perform photopolymerization / crosslinking, vacuum drying was performed at 60 ° C. for 1 hour to form a second hole transport layer.
 次に、Host-18(60mg)とD-1(3.0mg)とD-10(2.0mg)をトルエン6mlに溶解した溶液を用い、2000rpm、30秒の条件下、スピンコート法により成膜した。60℃で1時間真空乾燥し第一発光層を形成した。 Next, a solution obtained by dissolving Host-18 (60 mg), D-1 (3.0 mg) and D-10 (2.0 mg) in 6 ml of toluene was prepared by spin coating under the condition of 2000 rpm and 30 seconds. Filmed. The first light emitting layer was formed by vacuum drying at 60 ° C. for 1 hour.
 更にこの第一発光層上に、Host-9(60mg)とD-26(6.0mg)を6mlのヘキサフルオロイソプロパノール(HFIP)に溶解した溶液を用い、2000rpm、30秒の条件でスピンコート法により成膜し、60℃で1時間真空乾燥し、第二発光層を形成した。 Further, on this first light emitting layer, a solution in which Host-9 (60 mg) and D-26 (6.0 mg) were dissolved in 6 ml of hexafluoroisopropanol (HFIP) was used, and spin coating was performed at 2000 rpm for 30 seconds. Was formed into a film and vacuum-dried at 60 ° C. for 1 hour to form a second light emitting layer.
 この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10-4Paまで減圧した後、第二発光層上に、電子輸送材料4を30nm、続いて陰極バッファー層としてフッ化リチウムを0.5nm、更に陰極としてアルミニウムを110nm蒸着して陰極を形成し、有機EL素子5-1を作製した。 This substrate is fixed to a substrate holder of a vacuum evaporation apparatus, and the vacuum chamber is depressurized to 4 × 10 −4 Pa, and then the electron transport material 4 is 30 nm on the second light emitting layer, and then lithium fluoride as a cathode buffer layer. The organic EL element 5-1 was manufactured by depositing aluminum with a thickness of 0.5 nm and further depositing aluminum with a thickness of 110 nm as a cathode.
 この素子に通電したところほぼ白色の光が得られ、照明装置として使用出来ることが判った。尚、例示の他の化合物に置き換えても同様に白色の発光が得られることが判った。 When this element was energized, almost white light was obtained, indicating that it could be used as a lighting device. In addition, it turned out that white light emission is obtained similarly even if it replaces with the other compound of illustration.
 1 ディスプレイ
 3 画素
 5 走査線
 6 データ線
 7 電源ライン
 10 有機EL素子
 11 スイッチングトランジスタ
 12 駆動トランジスタ
 13 コンデンサ
 A 表示部
 B 制御部
 101 有機EL素子
 102 ガラスカバー
 105 陰極
 106 有機EL層
 107 透明電極付きガラス基板
 108 窒素ガス
 109 捕水剤
DESCRIPTION OF SYMBOLS 1 Display 3 Pixel 5 Scan line 6 Data line 7 Power supply line 10 Organic EL element 11 Switching transistor 12 Drive transistor 13 Capacitor A Display part B Control part 101 Organic EL element 102 Glass cover 105 Cathode 106 Organic EL layer 107 Glass substrate with a transparent electrode 108 Nitrogen gas 109 Water catching agent

Claims (14)

  1. 陽極と陰極の間に2層以上の発光層を含む複数の構成層が狭持されてなる有機エレクトロルミネッセンス素子において、
    該発光層の少なくとも2層がウェットプロセスで作製する工程を経て作製されたことを特徴とする有機エレクトロルミネッセンス素子。
    In an organic electroluminescence device in which a plurality of constituent layers including two or more light emitting layers are sandwiched between an anode and a cathode,
    An organic electroluminescence device, wherein at least two layers of the light emitting layer are manufactured through a process of manufacturing by a wet process.
  2. 前記発光層の少なくとも1層がリン光発光性の有機金属錯体を含有することを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。 2. The organic electroluminescence device according to claim 1, wherein at least one of the light emitting layers contains a phosphorescent organometallic complex.
  3. 前記リン光発光性の有機金属錯体の少なくとも1種が下記一般式(1)で表される化合物であることを特徴とする請求項2に記載の有機エレクトロルミネッセンス素子。
    Figure JPOXMLDOC01-appb-C000001

    〔式中、P、Qは、各々炭素原子または窒素原子を表し、A1はP-Cと共に芳香族炭化水素環または芳香族複素環を形成する原子群を表す。A2はQ-Nと共に芳香族複素環を形成する原子群を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。〕
    The organic electroluminescence device according to claim 2, wherein at least one of the phosphorescent organometallic complexes is a compound represented by the following general formula (1).
    Figure JPOXMLDOC01-appb-C000001

    [Wherein, P and Q each represent a carbon atom or a nitrogen atom, and A1 represents an atomic group forming an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with PC. A2 represents an atomic group that forms an aromatic heterocycle with QN. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. ]
  4. 前記一般式(1)で表される化合物が、下記一般式(2)で表される化合物であることを特徴とする請求項3に記載の有機エレクトロルミネッセンス素子。
    Figure JPOXMLDOC01-appb-C000002

    〔式中、Zは、置換基を表す。P、Qは、各々炭素原子または窒素原子を表し、A1はP-Cと共に芳香族炭化水素環または芳香族複素環を形成する原子群を表す。A3は-C(R01)=C(R02)-、-N=C(R02)-、-C(R01)=N-または-N=N-を表し、R01、R02は、各々水素原子または置換基を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。〕
    The organic electroluminescent device according to claim 3, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (2).
    Figure JPOXMLDOC01-appb-C000002

    [In formula, Z represents a substituent. P and Q each represent a carbon atom or a nitrogen atom, and A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with P—C. A3 represents -C (R01) = C (R02)-, -N = C (R02)-, -C (R01) = N- or -N = N-, and each of R01 and R02 represents a hydrogen atom or a substituent. Represents a group. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. ]
  5. 前記一般式(2)で表される化合物が、下記一般式(3)で表される化合物であることを特徴とする請求項4に記載の有機エレクトロルミネッセンス素子。
    Figure JPOXMLDOC01-appb-C000003

    〔式中、R03は置換基を表し、R04は水素原子または置換基を表し、複数のR04は互いに結合して環を形成してもよい。n01は1~4の整数を表す。R05は水素原子または置換基を表し、複数のR04または複数のR05は、各々互いに結合して環を形成してもよい。n02は1~2の整数を表す。R06は水素原子または置換基を表し、互いに結合して環を形成してもよい。n03は1~4の整数を表す。Z1はC-Cと共に6員の芳香族炭化水素環もしくは、5員または6員の芳香族複素環を形成するのに必要な原子群を表す。Z2は炭化水素環または複素環を形成するのに必要な原子群を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。R04とR06及びR05とR06は互いに結合して環を形成していてもよい。〕
    The organic electroluminescent device according to claim 4, wherein the compound represented by the general formula (2) is a compound represented by the following general formula (3).
    Figure JPOXMLDOC01-appb-C000003

    [Wherein, R03 represents a substituent, R04 represents a hydrogen atom or a substituent, and a plurality of R04 may be bonded to each other to form a ring. n01 represents an integer of 1 to 4. R05 represents a hydrogen atom or a substituent, and a plurality of R04 or a plurality of R05 may be bonded to each other to form a ring. n02 represents an integer of 1 to 2. R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring. n03 represents an integer of 1 to 4. Z1 represents an atomic group necessary for forming a 6-membered aromatic hydrocarbon ring or a 5-membered or 6-membered aromatic heterocycle together with C—C. Z2 represents an atomic group necessary for forming a hydrocarbon ring or a heterocyclic ring. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. R04 and R06 and R05 and R06 may be bonded to each other to form a ring. ]
  6. 前記一般式(3)で表される化合物が、下記一般式(4)で表される化合物であることを特徴とする請求項5に記載の有機エレクトロルミネッセンス素子。
    Figure JPOXMLDOC01-appb-C000004

    〔式中、R03は置換基を表し、R04は水素原子または置換基を表し、複数のR04は互いに結合して環を形成してもよい。n01は1~4の整数を表す。R05は水素原子または置換基を表し、複数のR05は互いに結合して環を形成してもよい。n02は1~2の整数を表す。R06は水素原子または置換基を表し、互いに結合して環を形成してもよい。n03は1~3の整数を表す。R07は置換基または単結合手を表す。P1-L1-P2は2座の配位子を表し、P1、P2は各々独立に炭素原子、窒素原子または酸素原子を表す。L1はP1、P2と共に2座の配位子を形成する原子群を表す。j1は1~3の整数を表し、j2は0~2の整数を表すが、j1+j2は2または3である。M1は元素周期表における8族~10族の遷移金属元素を表す。〕
    The organic electroluminescence device according to claim 5, wherein the compound represented by the general formula (3) is a compound represented by the following general formula (4).
    Figure JPOXMLDOC01-appb-C000004

    [Wherein, R03 represents a substituent, R04 represents a hydrogen atom or a substituent, and a plurality of R04 may be bonded to each other to form a ring. n01 represents an integer of 1 to 4. R05 represents a hydrogen atom or a substituent, and a plurality of R05 may be bonded to each other to form a ring. n02 represents an integer of 1 to 2. R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring. n03 represents an integer of 1 to 3. R07 represents a substituent or a single bond. P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L1 represents an atomic group that forms a bidentate ligand together with P1 and P2. j1 represents an integer of 1 to 3, j2 represents an integer of 0 to 2, and j1 + j2 is 2 or 3. M1 represents a group 8-10 transition metal element in the periodic table. ]
  7. 前記リン光発光性の有機金属錯体がイリジウム錯体であることを特徴とする請求項2~6のいずれか1項に記載の有機エレクトロルミネッセンス素子。 The organic electroluminescence device according to any one of claims 2 to 6, wherein the phosphorescent organometallic complex is an iridium complex.
  8. 前記複数の構成層がウェットプロセスで形成される工程を経て作製されたことを特徴とする請求項1~7のいずれか1項に記載の有機エレクトロルミネッセンス素子。 The organic electroluminescence device according to any one of claims 1 to 7, wherein the plurality of constituent layers are manufactured through a step of forming by a wet process.
  9. 前記発光層の少なくとも1層に接する構成層がウェットプロセスで形成される工程を経て作製されたことを特徴とする請求項1~8のいずれか1項に記載の有機エレクトロルミネッセンス素子。 9. The organic electroluminescence device according to claim 1, wherein a constituent layer in contact with at least one of the light emitting layers is formed through a step of forming by a wet process.
  10. 前記構成層が、発光層と陰極との間に設けられた層であることを特徴とする請求項9に記載の有機エレクトロルミネッセンス素子。 The organic electroluminescent element according to claim 9, wherein the constituent layer is a layer provided between the light emitting layer and the cathode.
  11. 前記発光層に接する構成層が、いずれもウェットプロセスで形成される工程を経て作製されたことを特徴とする請求項1~10のいずれか1項に記載の有機エレクトロルミネッセンス素子。 The organic electroluminescence device according to any one of claims 1 to 10, wherein each of the constituent layers in contact with the light emitting layer is manufactured through a step of forming by a wet process.
  12. 白色に発光することを特徴とする請求項1~11のいずれか1項に記載の有機エレクトロルミネッセンス素子。 The organic electroluminescence device according to any one of claims 1 to 11, which emits white light.
  13. 請求項1~12のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。 An illuminating device comprising the organic electroluminescence element according to any one of claims 1 to 12.
  14. 請求項1~12のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする表示装置。 A display device comprising the organic electroluminescence element according to any one of claims 1 to 12.
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