WO2011008038A3 - Group iii nitride semiconductor light-emitting device - Google Patents

Group iii nitride semiconductor light-emitting device Download PDF

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Publication number
WO2011008038A3
WO2011008038A3 PCT/KR2010/004628 KR2010004628W WO2011008038A3 WO 2011008038 A3 WO2011008038 A3 WO 2011008038A3 KR 2010004628 W KR2010004628 W KR 2010004628W WO 2011008038 A3 WO2011008038 A3 WO 2011008038A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
electrode
nitride semiconductor
group iii
semiconductor light
Prior art date
Application number
PCT/KR2010/004628
Other languages
French (fr)
Korean (ko)
Other versions
WO2011008038A2 (en
Inventor
김창태
남기연
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Priority to CN2010800362515A priority Critical patent/CN102549782A/en
Publication of WO2011008038A2 publication Critical patent/WO2011008038A2/en
Publication of WO2011008038A3 publication Critical patent/WO2011008038A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

The present disclosure relates to a group III nitride semiconductor light-emitting device, and more particularly, to a group III nitride semiconductor light-emitting device which emits light through electron-hole recombination, and which comprises: a first electrode and a second electrode for supplying a current for the electron-hole recombination; a first branch electrode branched from the first electrode; and a second branch electrode branched from the second electrode, wherein the second branch electrode has a thickness at least a portion of which is different from the thickness of the first branch electrode.
PCT/KR2010/004628 2009-07-15 2010-07-15 Group iii nitride semiconductor light-emitting device WO2011008038A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800362515A CN102549782A (en) 2009-07-15 2010-07-15 Group III nitride semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0064320 2009-07-15
KR1020090064320A KR101100684B1 (en) 2009-07-15 2009-07-15 Iii nitride semiconductor light emitting device

Publications (2)

Publication Number Publication Date
WO2011008038A2 WO2011008038A2 (en) 2011-01-20
WO2011008038A3 true WO2011008038A3 (en) 2011-04-28

Family

ID=43449982

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004628 WO2011008038A2 (en) 2009-07-15 2010-07-15 Group iii nitride semiconductor light-emitting device

Country Status (4)

Country Link
KR (1) KR101100684B1 (en)
CN (1) CN102549782A (en)
TW (1) TW201117425A (en)
WO (1) WO2011008038A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453968B (en) * 2011-05-20 2014-09-21 Huga Optotech Inc Semiconductor light-emitting structure
WO2013024921A1 (en) * 2011-08-17 2013-02-21 삼성전자주식회사 Semiconductor light emitting device
KR101349891B1 (en) * 2012-09-13 2014-02-13 주식회사 세미콘라이트 Semiconductor light emitting device
KR102075983B1 (en) * 2013-06-18 2020-02-11 삼성전자주식회사 Semiconductor light emitting device
JP6458463B2 (en) 2013-12-09 2019-01-30 日亜化学工業株式会社 Light emitting element
US10784407B2 (en) * 2018-04-23 2020-09-22 Asahi Kasei Kabushiki Kaisha Nitride semiconductor light emitting element and nitride semiconductor light emitting device
CN111081831B (en) * 2019-11-20 2021-03-23 华南师范大学 Multi-electrode-based illumination communication device and preparation method thereof
CN110911535A (en) * 2019-11-20 2020-03-24 华南师范大学 Visible light communication device based on branched annular electrode and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
KR20050074280A (en) * 2002-05-24 2005-07-18 루메이 옵토일렉트로닉스 코포레이션 High power, high luminous flux light emitting diode and method of making same
KR100833311B1 (en) * 2007-01-03 2008-05-28 삼성전기주식회사 Nitride semiconductor light emitting device
KR20080076248A (en) * 2007-02-15 2008-08-20 삼성전기주식회사 Nitride semiconductor light emitting device
KR20080091391A (en) * 2006-02-14 2008-10-10 쇼와 덴코 가부시키가이샤 Light-emitting diode
KR20090066863A (en) * 2007-12-20 2009-06-24 삼성전기주식회사 Nitride semiconductor light-emitting device with electrode pattern

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387099B1 (en) 2001-05-02 2003-06-12 광주과학기술원 GaN-Based Light Emitting Diode and Fabrication Method thereof
KR100576853B1 (en) * 2003-12-18 2006-05-10 삼성전기주식회사 Nitride semiconductor light emitting device
TWI376817B (en) * 2007-11-23 2012-11-11 Epistar Corp Light emitting device, light source apparatus and backlight module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
KR20050074280A (en) * 2002-05-24 2005-07-18 루메이 옵토일렉트로닉스 코포레이션 High power, high luminous flux light emitting diode and method of making same
KR20080091391A (en) * 2006-02-14 2008-10-10 쇼와 덴코 가부시키가이샤 Light-emitting diode
KR100833311B1 (en) * 2007-01-03 2008-05-28 삼성전기주식회사 Nitride semiconductor light emitting device
KR20080076248A (en) * 2007-02-15 2008-08-20 삼성전기주식회사 Nitride semiconductor light emitting device
KR20090066863A (en) * 2007-12-20 2009-06-24 삼성전기주식회사 Nitride semiconductor light-emitting device with electrode pattern

Also Published As

Publication number Publication date
KR20110006778A (en) 2011-01-21
TW201117425A (en) 2011-05-16
KR101100684B1 (en) 2012-01-03
WO2011008038A2 (en) 2011-01-20
CN102549782A (en) 2012-07-04

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