WO2011011184A3 - System and method for making a photovoltaic unit - Google Patents

System and method for making a photovoltaic unit Download PDF

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Publication number
WO2011011184A3
WO2011011184A3 PCT/US2010/040858 US2010040858W WO2011011184A3 WO 2011011184 A3 WO2011011184 A3 WO 2011011184A3 US 2010040858 W US2010040858 W US 2010040858W WO 2011011184 A3 WO2011011184 A3 WO 2011011184A3
Authority
WO
WIPO (PCT)
Prior art keywords
type material
molten
continuous casting
making
mold
Prior art date
Application number
PCT/US2010/040858
Other languages
French (fr)
Other versions
WO2011011184A2 (en
Inventor
James B. Sears
Original Assignee
Sears James B
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sears James B filed Critical Sears James B
Priority to EP10802642.8A priority Critical patent/EP2457264A4/en
Priority to CN201080033498.1A priority patent/CN102473793B/en
Publication of WO2011011184A2 publication Critical patent/WO2011011184A2/en
Publication of WO2011011184A3 publication Critical patent/WO2011011184A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/007—Continuous casting of metals, i.e. casting in indefinite lengths of composite ingots, i.e. two or more molten metals of different compositions being used to integrally cast the ingots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/06—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars
    • B22D11/0622—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars formed by two casting wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A process of making a photovoltaic unit includes steps of simultaneously forming a first layer of n-type material and a second layer of p-type material using a continuous casting process, and continuously bonding the first and second layers to form a p-n junction. The process may be performed using a twin-roll type continuous casting system having a continuous casting mold that includes a first mold compartment for receiving molten n-type material and a second mold compartment for receiving molten p-type material. The molten n-type material and the molten p-type material are gradually solidified into semi-solid shells and are pressed together by opposed casting rolls, creating a metallurgical bond between the n- type material and the p-type material that forms an effective p-n junction. The process permits the large scale efficient manufacturing of photovoltaic units.
PCT/US2010/040858 2009-07-21 2010-07-02 System and method for making a photovoltaic unit WO2011011184A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10802642.8A EP2457264A4 (en) 2009-07-21 2010-07-02 System and method for making a photovoltaic unit
CN201080033498.1A CN102473793B (en) 2009-07-21 2010-07-02 Manufacture the system and method for photoelectric cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/506,969 US7888158B1 (en) 2009-07-21 2009-07-21 System and method for making a photovoltaic unit
US12/506,969 2009-07-21

Publications (2)

Publication Number Publication Date
WO2011011184A2 WO2011011184A2 (en) 2011-01-27
WO2011011184A3 true WO2011011184A3 (en) 2011-04-28

Family

ID=43497663

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/040858 WO2011011184A2 (en) 2009-07-21 2010-07-02 System and method for making a photovoltaic unit

Country Status (4)

Country Link
US (1) US7888158B1 (en)
EP (1) EP2457264A4 (en)
CN (1) CN102473793B (en)
WO (1) WO2011011184A2 (en)

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US20110036530A1 (en) * 2009-08-11 2011-02-17 Sears Jr James B System and Method for Integrally Casting Multilayer Metallic Structures
US20110036531A1 (en) * 2009-08-11 2011-02-17 Sears Jr James B System and Method for Integrally Casting Multilayer Metallic Structures
JP5669006B2 (en) * 2010-10-19 2015-02-12 日本電気硝子株式会社 Strip glass film manufacturing method and strip glass film manufacturing apparatus
US20140099232A1 (en) * 2012-10-09 2014-04-10 Corning Incorporated Sheet of semiconducting material, system for forming same, and method of forming same
GB2543517A (en) * 2015-10-20 2017-04-26 Pyrotek Eng Mat Ltd Caster tip for a continuous casting process
US20170245614A1 (en) * 2016-02-26 2017-08-31 Michalyn Demaris Porter Hairdryer Attachment
CN107946390A (en) * 2017-12-04 2018-04-20 孙健春 It is a kind of that there is the solar cell and production method for changing power grid
CN114107853B (en) * 2021-11-25 2022-11-29 兰州理工大学 Production process and device of low-layer fault energy nickel-based high-temperature alloy

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R. B. CAMPBELL ET AL.: "Simultaneous junction formation using a directed energy light", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 133, no. 10, 1 October 1986 (1986-10-01), pages 221 0 - 2211, XP000839586 *

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