WO2011011476A3 - Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions - Google Patents

Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions Download PDF

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Publication number
WO2011011476A3
WO2011011476A3 PCT/US2010/042689 US2010042689W WO2011011476A3 WO 2011011476 A3 WO2011011476 A3 WO 2011011476A3 US 2010042689 W US2010042689 W US 2010042689W WO 2011011476 A3 WO2011011476 A3 WO 2011011476A3
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WO
WIPO (PCT)
Prior art keywords
compositions
methods
doped regions
forming doped
fabricating
Prior art date
Application number
PCT/US2010/042689
Other languages
French (fr)
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WO2011011476A2 (en
Inventor
Roger Yu-Kwan Leung
Wenya Fan
Jan Nedbal
Lea M. Dankers
Original Assignee
Honeywell International Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc. filed Critical Honeywell International Inc.
Priority to JP2012521745A priority Critical patent/JP2013500584A/en
Publication of WO2011011476A2 publication Critical patent/WO2011011476A2/en
Publication of WO2011011476A3 publication Critical patent/WO2011011476A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150C.
PCT/US2010/042689 2009-07-23 2010-07-21 Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions WO2011011476A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012521745A JP2013500584A (en) 2009-07-23 2010-07-21 Compositions for forming doped regions in a semiconductor substrate, methods for making such compositions, and methods for forming doped regions using such compositions

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US22788409P 2009-07-23 2009-07-23
US61/227,884 2009-07-23
US12/839,924 US8324089B2 (en) 2009-07-23 2010-07-20 Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US12/839,924 2010-07-20

Publications (2)

Publication Number Publication Date
WO2011011476A2 WO2011011476A2 (en) 2011-01-27
WO2011011476A3 true WO2011011476A3 (en) 2011-05-05

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US (1) US8324089B2 (en)
JP (1) JP2013500584A (en)
KR (1) KR20120051017A (en)
TW (1) TW201127917A (en)
WO (1) WO2011011476A2 (en)

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