WO2011018734A1 - Vertical cavity surface emitting laser with active carrier confinement - Google Patents
Vertical cavity surface emitting laser with active carrier confinement Download PDFInfo
- Publication number
- WO2011018734A1 WO2011018734A1 PCT/IB2010/053513 IB2010053513W WO2011018734A1 WO 2011018734 A1 WO2011018734 A1 WO 2011018734A1 IB 2010053513 W IB2010053513 W IB 2010053513W WO 2011018734 A1 WO2011018734 A1 WO 2011018734A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- surface emitting
- cavity surface
- vertical cavity
- emitting laser
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/0624—Controlling other output parameters than intensity or frequency controlling the near- or far field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
- H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012524313A JP6026884B2 (en) | 2009-08-10 | 2010-08-03 | Vertical cavity surface emitting laser with active carrier confinement. |
US13/388,713 US8457170B2 (en) | 2009-08-10 | 2010-08-03 | Vertical cavity surface emitting laser with active carrier confinement |
EP10747290.4A EP2465172B1 (en) | 2009-08-10 | 2010-08-03 | Vertical cavity surface emitting laser with active carrier confinement |
CN201080035587.XA CN102474072B (en) | 2009-08-10 | 2010-08-03 | Vertical cavity surface emitting laser with active carrier confinement |
KR1020127006339A KR101701711B1 (en) | 2009-08-10 | 2010-08-03 | Vertical cavity surface emitting laser with active carrier confinement |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09167565.2 | 2009-08-10 | ||
EP09167565 | 2009-08-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011018734A1 true WO2011018734A1 (en) | 2011-02-17 |
Family
ID=42983700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2010/053513 WO2011018734A1 (en) | 2009-08-10 | 2010-08-03 | Vertical cavity surface emitting laser with active carrier confinement |
Country Status (6)
Country | Link |
---|---|
US (1) | US8457170B2 (en) |
EP (1) | EP2465172B1 (en) |
JP (1) | JP6026884B2 (en) |
KR (1) | KR101701711B1 (en) |
CN (1) | CN102474072B (en) |
WO (1) | WO2011018734A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015055600A1 (en) * | 2013-10-16 | 2015-04-23 | Koninklijke Philips N.V. | Compact laser device |
US9882355B2 (en) | 2014-09-25 | 2018-01-30 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser |
RU199498U1 (en) * | 2019-12-24 | 2020-09-03 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) | HETEROSTRUCTURE OF A LONG-WAVE VERTICAL-RADIATING LASER |
DE102011085344B4 (en) | 2011-10-27 | 2022-12-01 | Robert Bosch Gmbh | laser light source |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9190810B2 (en) * | 2008-07-28 | 2015-11-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
US8406266B2 (en) * | 2011-08-31 | 2013-03-26 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
WO2014204468A1 (en) * | 2013-06-20 | 2014-12-24 | Hewlett-Packard Development Company, Lp | Mode-controlled laser system |
WO2018064411A1 (en) * | 2016-09-28 | 2018-04-05 | Finisar Corporation | Implant regrowth vcsel and vcsel array with heterogeneous combination of different vcsel types |
US10681474B2 (en) * | 2017-09-19 | 2020-06-09 | Vocalzoom Systems Ltd. | Laser-based devices utilizing improved self-mix sensing |
EP3514898A1 (en) * | 2018-01-19 | 2019-07-24 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated photodiode |
CN108775974B (en) * | 2018-04-12 | 2020-03-31 | 安徽大学 | Temperature sensing measurement device and method based on multi-longitudinal-mode self-mixing effect |
JP6891870B2 (en) * | 2018-12-28 | 2021-06-18 | セイコーエプソン株式会社 | projector |
EP3742563A1 (en) | 2019-05-22 | 2020-11-25 | TRUMPF Photonic Components GmbH | Vertical cavity surface emitting laser device, laser light source and method of operating a laser light source |
US11549799B2 (en) * | 2019-07-01 | 2023-01-10 | Apple Inc. | Self-mixing interference device for sensing applications |
KR102412761B1 (en) * | 2021-02-05 | 2022-06-24 | 하나옵트로닉스 주식회사 | VCSEL Chip Having a Step, VCSEL Array and Method for Manufacturing thereof |
KR102422873B1 (en) * | 2021-02-05 | 2022-07-20 | 하나옵트로닉스 주식회사 | VCSEL Chip, VCSEL Array and Method for Manufacturing thereof |
Citations (3)
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US5892786A (en) * | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
US20030021322A1 (en) * | 2000-02-02 | 2003-01-30 | Gunther Steinle | VCSEL with monolithically integrated photodetector |
WO2009074951A2 (en) * | 2007-12-11 | 2009-06-18 | Koninklijke Philips Electronics N. V. | Semiconductor laser with integrated phototransistor |
Family Cites Families (11)
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US521668A (en) * | 1894-06-19 | Photograph-display cabinet | ||
JPH03248395A (en) * | 1990-02-26 | 1991-11-06 | Sony Corp | Optical memory device |
US5132982A (en) | 1991-05-09 | 1992-07-21 | Bell Communications Research, Inc. | Optically controlled surface-emitting lasers |
US5404373A (en) | 1991-11-08 | 1995-04-04 | University Of New Mexico | Electro-optical device |
US5283447A (en) * | 1992-01-21 | 1994-02-01 | Bandgap Technology Corporation | Integration of transistors with vertical cavity surface emitting lasers |
US5216686A (en) * | 1992-02-03 | 1993-06-01 | Motorola, Inc. | Integrated HBT and VCSEL structure and method of fabrication |
US5245622A (en) * | 1992-05-07 | 1993-09-14 | Bandgap Technology Corporation | Vertical-cavity surface-emitting lasers with intra-cavity structures |
US5393994A (en) * | 1993-02-08 | 1995-02-28 | Matsushita Electric Industrial Co., Ltd. | Optical semiconductor device for neural network |
US6097748A (en) | 1998-05-18 | 2000-08-01 | Motorola, Inc. | Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication |
KR20050019484A (en) * | 2003-08-19 | 2005-03-03 | 삼성전자주식회사 | Long wavelength Vertical Cavity Surface Emitting Laser with monolithically-growth photodetector |
US7376169B2 (en) | 2005-03-07 | 2008-05-20 | Joseph Reid Henrichs | Optical phase conjugation laser diode |
-
2010
- 2010-08-03 JP JP2012524313A patent/JP6026884B2/en active Active
- 2010-08-03 CN CN201080035587.XA patent/CN102474072B/en active Active
- 2010-08-03 KR KR1020127006339A patent/KR101701711B1/en active IP Right Grant
- 2010-08-03 WO PCT/IB2010/053513 patent/WO2011018734A1/en active Application Filing
- 2010-08-03 EP EP10747290.4A patent/EP2465172B1/en active Active
- 2010-08-03 US US13/388,713 patent/US8457170B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892786A (en) * | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
US20030021322A1 (en) * | 2000-02-02 | 2003-01-30 | Gunther Steinle | VCSEL with monolithically integrated photodetector |
WO2009074951A2 (en) * | 2007-12-11 | 2009-06-18 | Koninklijke Philips Electronics N. V. | Semiconductor laser with integrated phototransistor |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011085344B4 (en) | 2011-10-27 | 2022-12-01 | Robert Bosch Gmbh | laser light source |
WO2015055600A1 (en) * | 2013-10-16 | 2015-04-23 | Koninklijke Philips N.V. | Compact laser device |
US10116119B2 (en) | 2013-10-16 | 2018-10-30 | Koninklijke Philips N.V. | Compact laser device |
RU2672155C2 (en) * | 2013-10-16 | 2018-11-12 | Конинклейке Филипс Н.В. | Compact laser device |
US10707646B2 (en) | 2013-10-16 | 2020-07-07 | Trumpf Photonic Components Gmbh | Compact laser device |
US9882355B2 (en) | 2014-09-25 | 2018-01-30 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser |
RU2645805C1 (en) * | 2014-09-25 | 2018-02-28 | Конинклейке Филипс Н.В. | Laser with vertical resonator and surface radiation |
RU199498U1 (en) * | 2019-12-24 | 2020-09-03 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) | HETEROSTRUCTURE OF A LONG-WAVE VERTICAL-RADIATING LASER |
Also Published As
Publication number | Publication date |
---|---|
JP6026884B2 (en) | 2016-11-16 |
EP2465172A1 (en) | 2012-06-20 |
KR101701711B1 (en) | 2017-02-03 |
EP2465172B1 (en) | 2019-07-03 |
KR20120047288A (en) | 2012-05-11 |
CN102474072B (en) | 2014-11-05 |
US8457170B2 (en) | 2013-06-04 |
US20120128020A1 (en) | 2012-05-24 |
CN102474072A (en) | 2012-05-23 |
JP2013502067A (en) | 2013-01-17 |
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