WO2011022749A1 - Method of removing photoresist and etch-residues from vias - Google Patents
Method of removing photoresist and etch-residues from vias Download PDFInfo
- Publication number
- WO2011022749A1 WO2011022749A1 PCT/AU2009/001088 AU2009001088W WO2011022749A1 WO 2011022749 A1 WO2011022749 A1 WO 2011022749A1 AU 2009001088 W AU2009001088 W AU 2009001088W WO 2011022749 A1 WO2011022749 A1 WO 2011022749A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoresist
- gas
- fluorine
- ink
- ashing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 23
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- 239000011737 fluorine Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000429 assembly Methods 0.000 claims description 10
- 230000000712 assembly Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 5
- 239000011253 protective coating Substances 0.000 claims description 2
- 238000004380 ashing Methods 0.000 description 48
- 239000007789 gas Substances 0.000 description 24
- 210000002381 plasma Anatomy 0.000 description 13
- 238000007641 inkjet printing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000009623 Bosch process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 235000009508 confectionery Nutrition 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14137—Resistor surrounding the nozzle opening
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/052—Ink-jet print cartridges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020127004947A KR20120060832A (en) | 2009-08-25 | 2009-08-25 | Method of removing photoresist and etch-residues from vias |
CN2009801601351A CN102473637A (en) | 2009-08-25 | 2009-08-25 | Method of removing photoresist and etch-residues from vias |
SG2012010617A SG178435A1 (en) | 2009-08-25 | 2009-08-25 | Method of removing photoresist and etch-residues from vias |
PCT/AU2009/001088 WO2011022749A1 (en) | 2009-08-25 | 2009-08-25 | Method of removing photoresist and etch-residues from vias |
JP2012516433A JP2012531053A (en) | 2009-08-25 | 2009-08-25 | Method for removing photoresist and etching residues from vias |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/AU2009/001088 WO2011022749A1 (en) | 2009-08-25 | 2009-08-25 | Method of removing photoresist and etch-residues from vias |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011022749A1 true WO2011022749A1 (en) | 2011-03-03 |
Family
ID=43627057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/AU2009/001088 WO2011022749A1 (en) | 2009-08-25 | 2009-08-25 | Method of removing photoresist and etch-residues from vias |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2012531053A (en) |
KR (1) | KR20120060832A (en) |
CN (1) | CN102473637A (en) |
SG (1) | SG178435A1 (en) |
WO (1) | WO2011022749A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103092009B (en) * | 2011-11-08 | 2015-05-20 | 无锡华润华晶微电子有限公司 | Removing method of photoresist used as masking layer of plasma injection |
JP5921953B2 (en) * | 2012-03-28 | 2016-05-24 | 芝浦メカトロニクス株式会社 | Reflective mask manufacturing method and reflective mask manufacturing apparatus |
KR20240040525A (en) * | 2022-09-21 | 2024-03-28 | 피에스케이 주식회사 | A method for treating a substrate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020058397A1 (en) * | 2000-11-15 | 2002-05-16 | Smith Patricia B. | Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials |
US6440864B1 (en) * | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
US6806038B2 (en) * | 2002-07-08 | 2004-10-19 | Lsi Logic Corporation | Plasma passivation |
US20060040474A1 (en) * | 2004-08-17 | 2006-02-23 | Jyu-Horng Shieh | Low oxygen content photoresist stripping process for low dielectric constant materials |
US20070020944A1 (en) * | 2003-08-08 | 2007-01-25 | Applied Materials, Inc. | Selective etch process of a sacrificial light absorbing material (slam) over a dielectric material |
US20090078675A1 (en) * | 2007-09-26 | 2009-03-26 | Silverbrook Research Pty Ltd | Method of removing photoresist |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313280A (en) * | 2000-04-02 | 2001-11-09 | Axcelis Technologies Inc | Postetched photoresist and method for removing residue |
JP5038567B2 (en) * | 2001-09-26 | 2012-10-03 | 東京エレクトロン株式会社 | Etching method |
JP2005268312A (en) * | 2004-03-16 | 2005-09-29 | Semiconductor Leading Edge Technologies Inc | Resist removing method and semiconductor device manufactured using same |
US8034176B2 (en) * | 2006-03-28 | 2011-10-11 | Tokyo Electron Limited | Gas distribution system for a post-etch treatment system |
-
2009
- 2009-08-25 WO PCT/AU2009/001088 patent/WO2011022749A1/en active Application Filing
- 2009-08-25 CN CN2009801601351A patent/CN102473637A/en active Pending
- 2009-08-25 SG SG2012010617A patent/SG178435A1/en unknown
- 2009-08-25 KR KR1020127004947A patent/KR20120060832A/en not_active Application Discontinuation
- 2009-08-25 JP JP2012516433A patent/JP2012531053A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440864B1 (en) * | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
US20020058397A1 (en) * | 2000-11-15 | 2002-05-16 | Smith Patricia B. | Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials |
US6806038B2 (en) * | 2002-07-08 | 2004-10-19 | Lsi Logic Corporation | Plasma passivation |
US20070020944A1 (en) * | 2003-08-08 | 2007-01-25 | Applied Materials, Inc. | Selective etch process of a sacrificial light absorbing material (slam) over a dielectric material |
US20060040474A1 (en) * | 2004-08-17 | 2006-02-23 | Jyu-Horng Shieh | Low oxygen content photoresist stripping process for low dielectric constant materials |
US20090078675A1 (en) * | 2007-09-26 | 2009-03-26 | Silverbrook Research Pty Ltd | Method of removing photoresist |
Also Published As
Publication number | Publication date |
---|---|
SG178435A1 (en) | 2012-03-29 |
CN102473637A (en) | 2012-05-23 |
JP2012531053A (en) | 2012-12-06 |
KR20120060832A (en) | 2012-06-12 |
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