WO2011031417A3 - Electronic device submounts with thermally conductive vias and light emitting devices including the same - Google Patents

Electronic device submounts with thermally conductive vias and light emitting devices including the same Download PDF

Info

Publication number
WO2011031417A3
WO2011031417A3 PCT/US2010/045713 US2010045713W WO2011031417A3 WO 2011031417 A3 WO2011031417 A3 WO 2011031417A3 US 2010045713 W US2010045713 W US 2010045713W WO 2011031417 A3 WO2011031417 A3 WO 2011031417A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermally conductive
electronic device
substrate
light emitting
same
Prior art date
Application number
PCT/US2010/045713
Other languages
French (fr)
Other versions
WO2011031417A2 (en
Inventor
Peter S. Andrews
Theodore D. Lowes
Robert D. Underwood
Original Assignee
Cree, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree, Inc. filed Critical Cree, Inc.
Priority to DE112010003578T priority Critical patent/DE112010003578T5/en
Priority to CN2010800513676A priority patent/CN102612744A/en
Publication of WO2011031417A2 publication Critical patent/WO2011031417A2/en
Publication of WO2011031417A3 publication Critical patent/WO2011031417A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Abstract

A submount for an electronic device includes an electrically insulating substrate including first and second surfaces and having a thickness between the first and second surfaces, a thermally conductive pad on the first surface of the substrate, and a thermally conductive via extending from the first surface of the substrate toward the second surface of the substrate and having a length that is less than the thickness of the substrate. The thermally conductive via has a higher thermal conductivity than a thermal conductivity of the substrate. Methods of forming submounts are also disclosed.
PCT/US2010/045713 2009-09-08 2010-08-17 Electronic device submounts with thermally conductive vias and light emitting devices including the same WO2011031417A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112010003578T DE112010003578T5 (en) 2009-09-08 2010-08-17 Electronic component submounts with thermally conductive feedthroughs and light emitting components with the same
CN2010800513676A CN102612744A (en) 2009-09-08 2010-08-17 Electronic device submounts with thermally conductive vias and light emitting devices including the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/555,218 2009-09-08
US12/555,218 US8410371B2 (en) 2009-09-08 2009-09-08 Electronic device submounts with thermally conductive vias and light emitting devices including the same

Publications (2)

Publication Number Publication Date
WO2011031417A2 WO2011031417A2 (en) 2011-03-17
WO2011031417A3 true WO2011031417A3 (en) 2011-07-07

Family

ID=43067231

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/045713 WO2011031417A2 (en) 2009-09-08 2010-08-17 Electronic device submounts with thermally conductive vias and light emitting devices including the same

Country Status (4)

Country Link
US (1) US8410371B2 (en)
CN (1) CN102612744A (en)
DE (1) DE112010003578T5 (en)
WO (1) WO2011031417A2 (en)

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JP5243975B2 (en) * 2008-02-04 2013-07-24 新光電気工業株式会社 Semiconductor package heat dissipating part having heat conducting member and method of manufacturing the same
US8248803B2 (en) * 2010-03-31 2012-08-21 Hong Kong Applied Science and Technology Research Institute Company Limited Semiconductor package and method of manufacturing the same
GB201105499D0 (en) * 2011-03-31 2011-05-18 Juice Technology Ltd Electrical device
KR20140040778A (en) 2011-06-01 2014-04-03 코닌클리케 필립스 엔.브이. A light emitting module comprising a thermal conductor, a lamp and a luminaire
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
JP5992518B2 (en) * 2012-05-28 2016-09-14 四国計測工業株式会社 High efficiency heat exchanger and high efficiency heat exchange method
JP6029912B2 (en) * 2012-09-25 2016-11-24 スタンレー電気株式会社 Semiconductor light emitting device
CN103032848B (en) * 2013-01-09 2015-02-18 深圳市华星光电技术有限公司 Liquid crystal display device, backlight module, printed circuit board and manufacturing method thereof
DE102013219369A1 (en) * 2013-09-26 2015-03-26 Osram Opto Semiconductors Gmbh Electronic device and method for manufacturing an electronic device
KR20160013706A (en) * 2014-07-28 2016-02-05 삼성전기주식회사 Printed circuit board and method of manufacturing the same
JP6367640B2 (en) * 2014-07-30 2018-08-01 日本特殊陶業株式会社 Wiring board
DE102014216194B3 (en) * 2014-08-14 2015-12-10 Robert Bosch Gmbh Circuit carrier with a heat conducting element, connection arrangement with a circuit carrier and method for dissipating heat loss
JP6476703B2 (en) * 2014-09-30 2019-03-06 日亜化学工業株式会社 Ceramic package, light emitting device, and manufacturing method thereof
US20160105949A1 (en) * 2014-10-14 2016-04-14 Shenzhen China Star Optoelectronics Technology Co. Ltd. Printed circuit board and display device
CN104333971A (en) * 2014-10-14 2015-02-04 深圳市华星光电技术有限公司 Printed circuit board and display device
US9472483B2 (en) 2014-12-17 2016-10-18 International Business Machines Corporation Integrated circuit cooling apparatus
US9184112B1 (en) 2014-12-17 2015-11-10 International Business Machines Corporation Cooling apparatus for an integrated circuit
CN105006515B (en) * 2015-06-04 2018-01-19 佛山市南海区联合广东新光源产业创新中心 A kind of LED chip radiator structure
US20160374203A1 (en) * 2015-06-19 2016-12-22 Mersen Usa Newburyport-Ma, Llc Printed circuit board via fuse
EP3494592A4 (en) * 2016-08-03 2020-11-11 Soliduv, Inc. Strain-tolerant die attach with improved thermal conductivity, and method of fabrication
US10283688B2 (en) 2016-08-22 2019-05-07 Nichia Corporation Light emitting device
US10230212B1 (en) * 2017-12-22 2019-03-12 Cisco Technology, Inc. Method and apparatus to prevent laser kink failures
DE102018113996A1 (en) * 2018-06-12 2019-12-12 Osram Opto Semiconductors Gmbh METHOD FOR THE PRODUCTION OF AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
JP7248699B2 (en) * 2018-09-27 2023-03-29 京セラ株式会社 Wiring boards and electrical devices
US11189766B2 (en) 2019-01-16 2021-11-30 Creeled, Inc. Light emitting diode packages
CN112420532B (en) * 2019-02-22 2022-07-19 西安航思半导体有限公司 Packaging process of pin-free DFN packaging device
CN112435974B (en) * 2019-02-22 2022-07-19 西安航思半导体有限公司 High strength DFN packaged semiconductor device
WO2021155222A1 (en) * 2020-01-31 2021-08-05 Ttm Technologies Inc. Printed circuit board assemblies with engineered thermal paths and methods of manufacturing

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US20090154513A1 (en) * 2007-12-12 2009-06-18 Kyung Ho Shin Multilayer board and light-emitting module having the same

Also Published As

Publication number Publication date
WO2011031417A2 (en) 2011-03-17
CN102612744A (en) 2012-07-25
DE112010003578T5 (en) 2012-09-06
US20110056734A1 (en) 2011-03-10
US8410371B2 (en) 2013-04-02

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