WO2011102279A1 - 基板洗浄方法及び基板洗浄装置 - Google Patents
基板洗浄方法及び基板洗浄装置 Download PDFInfo
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- WO2011102279A1 WO2011102279A1 PCT/JP2011/052797 JP2011052797W WO2011102279A1 WO 2011102279 A1 WO2011102279 A1 WO 2011102279A1 JP 2011052797 W JP2011052797 W JP 2011052797W WO 2011102279 A1 WO2011102279 A1 WO 2011102279A1
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- substrate
- gas
- cluster
- pressure
- substrate cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Definitions
- the present invention relates to a substrate cleaning method and a substrate cleaning apparatus, and more particularly to a substrate cleaning method and a substrate cleaning apparatus for cleaning a substrate without using a liquid.
- a desired pattern consisting of, for example, trenches and holes is formed on the wafer by performing a film formation process or an etching process on the wafer in each process.
- a film formation process or an etching process is performed on the wafer in each process.
- reaction products and unintended foreign matter may be generated in the film forming process or the etching process, and may adhere to the wafer.
- Foreign matter on the wafer adversely affects the processing of the next process, so it is necessary to remove it as much as possible.
- a dry cleaning method that cleans the wafer without using pure water or chemicals is suitable.
- a laser is irradiated on the wafer to evaporate foreign matter.
- the film formed on the wafer may be altered by laser irradiation, and because plasma has high energy, There is a risk that not only foreign matter but also the pattern may be scraped off by sputtering.
- GCIB Gas Cluster Ion Beam
- a method using GCIB has been developed as a dry cleaning method in which energy applied to the wafer is not so high (see, for example, Patent Document 1).
- GCIB is a method in which a gas is blown toward a vacuum atmosphere to form a cluster of gas molecules, the cluster is ionized, and a bias voltage is applied to the wafer to cause the ionized cluster to collide with the wafer.
- the clusters that collide with the wafer give kinetic energy to the wafer and are then decomposed and scattered as gas molecules.
- the chemical reaction between the foreign substance and the gas molecule is promoted by the kinetic energy on the wafer to generate a reactant, and the foreign substance is removed by sublimating the reactant.
- the ionized clusters are accelerated by the bias voltage and collide with the wafer. Therefore, gas molecules in the clusters cause defects in the film formed on the wafer and the wafer itself, or a predetermined amount of gas molecules are generated. Doping may cause film and wafer degradation.
- An object of the present invention is to provide a substrate cleaning method and a substrate cleaning apparatus that can prevent deterioration of a substrate and a film formed on the substrate while removing foreign substances adhering to the substrate.
- a plurality of gases are sprayed from a low pressure atmosphere onto a substrate on which foreign matter adheres and is disposed in a low pressure atmosphere.
- a substrate cleaning method in which a cluster of gas molecules is formed and the cluster is made to collide with the substrate without being ionized.
- the foreign matter removed from the substrate reached by the cluster is captured by a cooling unit disposed at a location different from the substrate.
- the high-pressure gas is sprayed obliquely with respect to the substrate.
- the foreign substance is a natural oxide film and the gas is chlorine trifluoride gas.
- the foreign substance is preferably an organic substance, and the gas is preferably carbon dioxide gas.
- the foreign substance is preferably a metal
- the gas is preferably a hydrogen halide gas.
- the substrate is heated when the cluster collides with the substrate.
- the gas spraying pressure is preferably 0.3 MPa to 2.0 MPa.
- the inside of the processing chamber that accommodates the substrate to which foreign matter is attached is a low-pressure atmosphere, and the pressure is higher than the low-pressure atmosphere toward the substrate.
- a substrate cleaning apparatus including a gas spraying unit that sprays gas to form a cluster composed of a plurality of gas molecules and causes the cluster to collide with the substrate without being ionized.
- WHEREIN It is low temperature than the said board
- the gas spraying section moves along the surface of the substrate while spraying the high-pressure gas.
- the gas spraying section preferably sprays the high-pressure gas obliquely with respect to the substrate.
- a heating unit for heating the substrate.
- the gas spraying section preferably sprays the high-pressure gas from a hole having a diameter of 0.02 mm to 1.0 mm.
- the high-pressure gas is sprayed on the substrate from a plurality of directions.
- the pressures of the high-pressure gases sprayed from the plurality of directions are set to be different from each other and / or the spray timings of the high-pressure gases are shifted from each other.
- each of the gas spraying units sprays the high-pressure gas on the substrate from a plurality of directions.
- the pressures of the high-pressure gases sprayed from the plurality of directions by the gas spray units are different from each other, and / or the gas spray units are sprayed from the high-pressure gases. Are preferably shifted from each other.
- a cluster composed of a plurality of gas molecules that are not ionized collides with a substrate on which foreign matter is adhered. Since the non-ionized clusters are not accelerated by a bias voltage or the like, the gas molecules that are decomposed and scattered are not doped into the film formed on the substrate or the substrate itself. On the other hand, since the cluster has a large mass even if it is not accelerated, the kinetic energy imparted to the substrate at the time of collision is larger than the kinetic energy imparted to the substrate by one gas molecule, which allows a chemical reaction between the foreign substance and the gas molecule. Can be promoted. Accordingly, it is possible to prevent the substrate and the film formed on the substrate from being deteriorated while removing the foreign matter adhering to the substrate.
- the foreign matter removed from the substrate and scattered is attracted to and captured by the cooling unit (particle recovery unit) set to a low temperature by the thermophoretic force. Therefore, it is possible to prevent the reactant removed from the substrate from reaching the substrate again and attaching thereto.
- high-pressure gas is sprayed obliquely with respect to the substrate.
- a reflected wave is generated from the substrate.
- the reflected wave is generated in a direction different from the moving direction of the cluster. Therefore, since the reflected wave does not collide with another cluster directly, and the other cluster does not decompose, the collision between the cluster and the substrate can be continued, and the efficiency of removing foreign substances from the substrate Can be prevented from decreasing.
- the foreign material is a natural oxide film and the gas is chlorine trifluoride gas.
- the natural oxide film reacts with chlorine trifluoride to generate a reaction product. Therefore, the natural oxide film as a foreign substance can be reliably removed from the substrate.
- the foreign substance is an organic substance and the gas is carbon dioxide gas.
- Organic substances react with carbon dioxide to produce reactants. Therefore, organic substances as foreign substances can be reliably removed from the substrate.
- the foreign material is a metal and the gas is a hydrogen halide gas.
- Metals react with hydrogen halides to produce reactants. Therefore, the metal as a foreign substance can be reliably removed from the substrate.
- the substrate is heated when the cluster collides with the substrate.
- the chemical reaction between the foreign substance and the gas molecule is promoted. Therefore, foreign substances can be reliably removed from the substrate.
- the pressure at the time of gas spraying is any one of 0.3 MPa to 2.0 MPa
- a sudden adiabatic expansion is caused in a low pressure atmosphere, and a plurality of gas molecules are generated. It is rapidly cooled. As a result, cluster formation can be promoted.
- the gas spraying part moves along the surface of the substrate while spraying a high-pressure gas, so that foreign matters can be removed from the entire surface of the substrate.
- CO 2 blast or another cluster composed of a plurality of gas molecules is ejected toward the cooling unit, and the foreign matter captured by the cooling unit is separated from the cooling unit.
- the gas spraying part sprays gas from a hole having a diameter of 0.02 mm to 1.0 mm, it is possible to increase the expansion coefficient of the gas during spraying, thereby further promoting the formation of clusters. can do.
- the high-pressure gas is sprayed on the substrate from a plurality of directions, it is possible to prevent occurrence of a location where the cluster does not collide on the substrate.
- the pressure of each high-pressure gas sprayed from a plurality of directions is different from each other and / or the spray timing of each high-pressure gas is shifted from each other, so that the high-pressure gas can be pulsated, Accordingly, the cleaning ability with the high-pressure gas can be remarkably improved.
- FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus that executes a substrate cleaning method according to an embodiment of the present invention.
- FIG. 2 is a process diagram showing each process of the substrate cleaning method executed by the substrate cleaning apparatus of FIG. [FIG. 3A], [FIG. 3B]
- FIG. 3B is a process diagram showing each process of the cleaning method of the particle recovery unit in FIG. [FIG. 4A], [FIG. 4B] Process diagrams showing respective steps of a conventional wafer cleaning method.
- FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus that executes a substrate cleaning method according to the present embodiment.
- a substrate cleaning apparatus 10 includes a chamber 11 (processing chamber) that houses a semiconductor wafer (hereinafter simply referred to as “wafer”) W as a substrate by reducing the internal atmosphere to a substantially vacuum, for example, 1 Pa.
- a table-like mounting table 12 arranged in the chamber 11 for mounting a wafer, and a gas spray nozzle 13 (gas spraying) arranged in the chamber 11 so as to face the wafer mounted on the mounting table 12.
- Part a cleaning nozzle 14 (spouting part) disposed in the vicinity of the mounting table 12, and an exhaust pipe 15 for exhausting the gas in the chamber 11.
- the mounting table 12 includes, for example, a string-like carbon heater (heating unit) (not shown), and heats a wafer W (hereinafter referred to as “mounting wafer W”) mounted on the mounting table 12.
- the gas spray nozzle 13 includes a cylindrical base 16, a gas ejection hole 17 having a diameter of 0.02 mm to 1.0 mm, for example, penetrating the base 16 along the central axis direction, and a wafer W in the base 16.
- Gas expansion holes 18 that are perforated at the side end portion and increase in diameter in a funnel shape toward the end portion, and plate-like particles that extend substantially parallel to the mounting wafer W at the end portion of the base portion 16 on the wafer W side.
- a recovery unit 19 19
- the base portion 16 is inclined with respect to the mounting wafer W by, for example, 45 °, and the gas ejection holes 17 spray gas through the gas expansion holes 18 at a pressure of 0.3 MPa to 2.0 MPa. Therefore, the gas spray nozzle 13 sprays gas at 45 ° with respect to the wafer W.
- the particle recovery unit 19 incorporates a cooling device, for example, a Peltier element, and the Peltier element lowers the temperature of the surface of the particle recovery unit 19 to be lower than the temperature of the mounting wafer W, for example, 10 ° C.
- a cooling device for example, a Peltier element
- the gas spray nozzle 13 can move in parallel to the surface of the mounting wafer W, and the movement amount is larger than the diameter of the mounting wafer W. Therefore, the gas spray nozzle 13 can spray gas toward the entire surface of the mounting wafer W.
- the gas spray nozzle 13 is provided on the left side of the base 16 in the drawing so that the particle recovery unit 19 does not face the mounting wafer W when the gas spray nozzle 13 moves to the leftmost in the drawing within the movable range. It is done.
- the cleaning nozzle 14 is a cylindrical nozzle and opens upward in the figure in the chamber 11, and the opening 14 a of the cleaning nozzle 14 moves to the leftmost side in the figure in the movable range of the gas spray nozzle 13. At this time, it faces the particle recovery unit 19.
- the exhaust pipe 15 is connected to a dry pump (DP) or a turbo molecular pump (TMP) on the downstream side.
- the exhaust pipe 15 exhausts the inside of the chamber 11 to reduce the atmosphere in the chamber 11 to almost vacuum, and particles floating in the chamber 11. Is discharged.
- FIG. 2A to 2D are process diagrams showing each process of the substrate cleaning method executed by the substrate cleaning apparatus of FIG.
- the gas spray nozzle 13 applies a cleaning gas (high pressure gas) from the gas ejection hole 17 toward the wafer W at a pressure of 0.3 MPa to 2.0 MPa. Spray.
- a cleaning gas high pressure gas
- the atmosphere in the gas expansion hole 18 is almost vacuum like the atmosphere in the chamber 11, the pressure of the cleaning gas rapidly decreases, and the diameter of the gas expansion hole 18 is also in the course of the gas molecules 20. Therefore, the volume of the cleaning gas rapidly increases. That is, the cleaning gas sprayed from the gas ejection holes 17 undergoes a sudden adiabatic expansion and each gas molecule 20 is rapidly cooled.
- the cluster 21 collides with the foreign material 22 adhering to the wafer W without being ionized. At this time, the cluster 21 imparts kinetic energy to the foreign matter 22, and then is decomposed and scattered into a plurality of gas molecules 20 (FIG. 2B).
- the cluster 21 since the cluster 21 is not ionized, even if a bias voltage is applied to attract the mounting wafer W to the mounting table 12, it is not accelerated by the bias voltage. As a result, the cluster 21 gently collides with the foreign object 22. On the other hand, since the mass of the cluster 21 is large even if it is not accelerated, energy larger than the energy that one gas molecule 20 imparts to the foreign matter 22 can be imparted to the foreign matter 22. Therefore, each gas molecule 20 scattered from the cluster 21 gently collides with the foreign material 22 and the mounting wafer W, causing a defect on the film formed on the mounting wafer W and the mounting wafer W itself, or being doped.
- the chemical reaction between the foreign material 22 and a part of the gas molecules 20 is promoted by the large kinetic energy imparted, and a reactant 23 is generated.
- the carbon heater built in the mounting table 12 heats the reactant 23 via the wafer W, the chemical reaction between the foreign matter 22 and a part of the gas molecules 20 is also promoted.
- the reactant 23 continues to be given kinetic energy by other clusters that subsequently collide, and is also heated by the carbon heater built in the mounting table 12.
- the atmosphere around the reactant 23 is almost vacuum. Therefore, the reactant 23 is easily sublimated, peeled off from the mounting wafer W, and drifts in the chamber 11.
- the surface of the particle recovery unit 19 is set to a temperature lower than that of the mounting wafer W by the Peltier element built in, the sublimated reactant 23 moves toward the particle recovery unit 19 by the thermophoretic force, and the particle It adheres to the collection part 19 (FIG. 2C). That is, the particle recovery unit 19 recovers the reactant 23 peeled from the mounting wafer W (FIG. 2D).
- the type of cleaning gas sprayed by the gas spray nozzle 13 is appropriately determined according to the type of foreign matter 22 adhering to the wafer W.
- the foreign material 22 is a natural oxide film, for example, silicon dioxide (SiO 2 )
- chlorine trifluoride (ClF 3 ) causes a chemical reaction with the natural oxide film to generate a reaction product 23, so that as a cleaning gas Chlorine trifluoride gas may be used
- the foreign matter 22 is an organic substance
- carbon dioxide (CO 2 ) causes a chemical reaction with the organic substance to produce a reaction product 23, and therefore carbon dioxide gas may be used as the cleaning gas.
- hydrogen halide for example, hydrogen fluoride (HF) or hydrogen chloride (HCl) causes a chemical reaction with the metal to produce a reaction product 23, so that hydrogen halide gas is used as a cleaning gas. May be used.
- HF hydrogen fluoride
- HCl hydrogen chloride
- the base portion 16 of the gas spray nozzle 13 is inclined with respect to the mounting wafer W by, for example, 45 °
- the cluster 21 formed from the cleaning gas sprayed from the gas spray nozzle 13 is placed on the mounting wafer W. It collides in the direction of 45 degrees to. If the cluster 21 collides with the mounting wafer W perpendicularly, a reflected wave generated as a reaction of the collision of the cluster 21 is generated perpendicularly with respect to the wafer W. Therefore, since the reflected wave collides with another cluster that continues, the other cluster is decomposed.
- the substrate cleaning method of FIG. 2 is continued, the amount of the reactant 23 adhering to the particle recovery unit 19 increases, and the surface of the particle recovery unit 19 is almost covered with the reactant 23. There is a possibility that the object 23 cannot adhere to the particle recovery unit 19 and continues to drift in the chamber 11.
- the particle recovery unit 19 is periodically cleaned. Specifically, after cleaning a predetermined number of wafers W, the gas spray nozzle 13 is moved to the leftmost side in the movable range in a state where no wafers W exist in the chamber 11 to clean the particle recovery unit 19. It is made to oppose with the opening part 14a of the nozzle 14 (FIG. 3A).
- a CO 2 blast or a cluster of gas molecules is ejected from the opening 14 a of the cleaning nozzle 14 toward the particle recovery unit 19.
- the reactant 23 adhering to the particle recovery unit 19 is separated from the particle recovery unit 19 by the sprayed CO 2 blast or the cluster of gas molecules (FIG. 3B).
- the separated reactant 23 is discharged from the chamber 11 through the exhaust pipe 15.
- the cluster 21 composed of a plurality of gas molecules 20 that are not ionized collides with the mounting wafer W to which the foreign matter 22 is adhered. Since the non-ionized cluster 21 is not accelerated by a bias voltage or the like, each gas molecule 20 which is decomposed and scattered by the cluster 21 is defective in the film formed on the mounting wafer W or the mounting wafer W itself. Is not generated or doped. On the other hand, since the mass of the cluster 21 is large even if it is not accelerated, the kinetic energy imparted to the foreign material 22 at the time of collision is larger than the kinetic energy imparted to the foreign material 22 by one gas molecule 20. A chemical reaction with a part of the molecule 20 can be promoted. Accordingly, it is possible to prevent deterioration of the mounting wafer W and the film formed on the mounting wafer W while removing the foreign matter 22 attached to the mounting wafer W.
- the reactant 23 removed from the mounting wafer W is attracted and captured by the particle recovery unit 19 disposed at a location different from the mounting wafer W. Therefore, it is possible to prevent the reactant 23 removed from the mounting wafer W from reaching the mounting wafer W again and adhering thereto.
- the reflected wave generated as the reaction of the collision of the cluster 21 is 135. Occurs in the direction of °. Therefore, the reflected wave does not collide with another cluster directly, and the other cluster does not decompose, so that the collision between the cluster 21 and the mounting wafer W can be continued. It is possible to prevent the efficiency of removing the foreign matter 22 from the deterioration.
- the pressure when spraying the cleaning gas is between 0.3 MPa and 2.0 MPa, the pressure of the cleaning gas is rapidly increased when the gas is sprayed. Further, since the cleaning gas is sprayed from the gas ejection hole 17 having a diameter of 0.02 mm to 1.0 mm, the expansion rate of the gas during spraying can be increased, and the It is possible to rapidly cool a plurality of gas molecules 20 by causing adiabatic expansion. As a result, the formation of the cluster 21 can be further promoted.
- the substrate cleaning apparatus 10 since it is not necessary to ionize the cluster 21, the substrate cleaning apparatus 10 does not need to include an ionizer such as an ionizer, and the structure of the substrate cleaning apparatus 10 is simplified. can do.
- the gas spray nozzle 13 moves along the surface of the mounting wafer W while spraying the cleaning gas, so that the foreign matter 22 is removed from the entire surface of the mounting wafer W. Can be removed.
- Some types of the cleaning gas are difficult to form the cluster 21, but in this case, the mass of the cluster 21 does not increase so much, so that the chemical reaction between the foreign matter 22 and a part of the gas molecules 20 is promoted.
- the foreign material 22 is preferably heated more strongly by a carbon heater.
- the mass of the cluster 21 becomes larger than necessary. Therefore, even if the foreign material 22 is not heated by the carbon heater, the foreign material 22 and part of the gas molecules 20 are present. The chemical reaction with can be promoted.
- one gas spray nozzle 13 is arranged so as to spray the cleaning gas at 45 ° with respect to the mounting wafer W.
- a portion where the cleaning gas is locally blocked by the pattern formed on the surface and the cluster 21 does not collide may be generated.
- a plurality of gas spray nozzles (for example, gas is respectively applied from 45 ° and 85 ° to the mounting wafer W so that the cleaning gas can be sprayed from a plurality of directions to the mounting wafer W, respectively.
- Two gas spray nozzles may be arranged to spray.
- the cleaning gas can be sprayed from a plurality of directions on the mounting wafer W, thereby preventing the cleaning gas from being blocked locally and preventing the occurrence of a location where the cluster 21 does not collide. be able to.
- the frequency of the collision between the cluster 21 and the foreign material 22 can be improved by spraying the cleaning gas from a plurality of directions.
- the diameter of the gas ejection holes of each gas spray nozzle and the pressure of the sprayed cleaning gas may be set different from each other. Further, the spray timing of the cleaning gas of each gas spray nozzle may be shifted from each other. As a result, the pulsation can be given to the cleaning gas, so that the cleaning ability by the cleaning gas can be dramatically improved.
- the gas spray nozzle 13 is moved along the surface of the mounting wafer W, but the position of the gas spray nozzle is fixed and the mounting wafer W is moved in a predetermined direction. It may be slid or rotated. Also by this, the foreign material 22 can be removed from the entire surface of the mounting wafer W.
- the substrate to which the substrate cleaning method is applied in the above-described embodiment is not limited to a semiconductor wafer, and various substrates used for FPD (Flat Panel Display) including LCD (Liquid Crystal Display), photomasks, CD substrates Or a printed circuit board.
- FPD Fluorescence Deformation
- LCD Liquid Crystal Display
Abstract
Description
[図2A]~[図2D]図1の基板洗浄装置が実行する基板洗浄方法の各工程を示す工程図である。
[図3A]、[図3B]図1におけるパーティクル回収部の洗浄方法の各工程を示す工程図である。
[図4A]、[図4B]従来のウエハ洗浄方法の各工程を示す工程図である。
10 基板洗浄装置
12 載置台
13 ガス噴霧ノズル
14 ヒータノズル
19 パーティクル回収部
20 ガス分子
21 クラスター
22 異物
23 反応物
Claims (19)
- 異物が付着し且つ低圧の雰囲気中に配される基板に向けて前記低圧の雰囲気より高圧のガスを噴霧して複数のガス分子からなるクラスターを形成し、
該クラスターをイオン化することなく前記基板へ衝突させることを特徴とする基板洗浄方法。 - 前記クラスターが到達した前記基板から除去された前記異物を前記基板とは別の場所に配された冷却部に捕捉させることを特徴とする請求項1記載の基板洗浄方法。
- 前記高圧のガスを前記基板に対して斜めに噴霧することを特徴とする請求項1記載の基板洗浄方法。
- 前記異物は自然酸化膜であり、前記ガスは三弗化塩素ガスであることを特徴とする請求項1記載の基板洗浄方法。
- 前記異物は有機物であり、前記ガスは二酸化炭素ガスであることを特徴とする請求項1記載の基板洗浄方法。
- 前記異物は金属であり、前記ガスはハロゲン化水素ガスであることを特徴とする請求項1記載の基板洗浄方法。
- 前記クラスターが前記基板へ衝突する際、前記基板を加熱することを特徴とする請求項1記載の基板洗浄方法。
- 前記ガスの噴霧時の圧力は0.3MPa~2.0MPaのいずれかであることを特徴とする請求項1記載の基板洗浄方法。
- 異物が付着した基板を収容する内部が低圧の雰囲気である処理室と、
前記基板に向けて前記低圧の雰囲気より高圧のガスを噴霧して複数のガス分子からなるクラスターを形成し、該クラスターをイオン化することなく前記基板へ衝突させるガス噴霧部とを備えることを特徴とする基板洗浄装置。 - 前記基板よりも低温であって、前記クラスターが到達した前記基板から除去された前記異物を捕捉する冷却部をさらに備え、前記冷却部は前記基板とは別の場所に配されることを特徴とする請求項9記載の基板洗浄装置。
- 前記ガス噴霧部が前記高圧のガスを噴霧しつつ前記基板の表面に沿って移動することを特徴とする請求項9記載の基板洗浄装置。
- 前記ガス噴霧部は前記高圧のガスを前記基板に対して斜めに噴霧することを特徴とする請求項9記載の基板洗浄装置。
- 前記基板を加熱する加熱部をさらに備えることを特徴とする請求項9記載の基板洗浄装置。
- 前記冷却部に向けてCO2ブラストまたは複数のガス分子からなる他のクラスターを噴出する噴出部をさらに備えることを特徴とする請求項10記載の基板洗浄装置。
- 前記ガス噴霧部は直径が0.02mm~1.0mmの穴から前記高圧のガスを噴霧することを特徴とする請求項9記載の基板洗浄装置。
- 前記高圧のガスを前記基板に対して複数の方向から噴霧することを特徴とする請求項1記載の基板洗浄方法。
- 前記複数の方向から噴霧される前記各高圧のガスの圧力を互いに異なるように設定し、及び/又は前記各高圧のガスの噴霧タイミングを互いにずらすことを特徴とする請求項16記載の基板洗浄方法。
- 前記ガス噴霧部を複数備え、前記各ガス噴霧部は前記高圧のガスを前記基板に対して複数の方向から噴霧することを特徴とする請求項9記載の基板洗浄装置。
- 前記各ガス噴霧部が前記複数の方向から噴霧する前記各高圧のガスの圧力は互いに異なり、及び/又は前記各ガス噴霧部が前記各高圧のガスの噴霧タイミングを互いにずらすことを特徴とする請求項18記載の基板洗浄装置。
Priority Applications (4)
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WO2022224822A1 (ja) * | 2021-04-20 | 2022-10-27 | 東京エレクトロン株式会社 | 基板処理装置及び固化膜除去方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11311917B2 (en) | 2007-08-09 | 2022-04-26 | Bruker Nano, Inc. | Apparatus and method for contamination identification |
JP5945178B2 (ja) * | 2012-07-04 | 2016-07-05 | 東京エレクトロン株式会社 | ガスクラスター照射機構およびそれを用いた基板処理装置、ならびにガスクラスター照射方法 |
JP6048043B2 (ja) * | 2012-09-28 | 2016-12-21 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置及び真空処理システム |
JP6545053B2 (ja) * | 2015-03-30 | 2019-07-17 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
CN104867819A (zh) * | 2015-04-14 | 2015-08-26 | 英利能源(中国)有限公司 | Pn结的制备方法及太阳能电池的制备方法 |
WO2017094389A1 (ja) * | 2015-11-30 | 2017-06-08 | 東京エレクトロン株式会社 | 基板洗浄方法 |
WO2017094388A1 (ja) * | 2015-11-30 | 2017-06-08 | 東京エレクトロン株式会社 | 基板処理装置のチャンバークリーニング方法 |
KR102500603B1 (ko) * | 2017-01-06 | 2023-02-17 | 레이브 엘엘씨 | 오염 식별 장치 및 방법 |
JP7334259B2 (ja) * | 2019-11-01 | 2023-08-28 | 東京エレクトロン株式会社 | 基板洗浄装置および基板洗浄方法 |
US11756805B2 (en) * | 2019-12-27 | 2023-09-12 | Veeco Instruments Inc. | Apparatus and method for die stack flux removal |
KR102599026B1 (ko) * | 2021-08-12 | 2023-11-06 | 한국원자력연구원 | 플라즈마 챔버 내 더스트 입자 제거 장치, 이를 포함하는 플라즈마 처리 장치, 그리고 그 방법 |
JP2023039766A (ja) | 2021-09-09 | 2023-03-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06145969A (ja) * | 1992-11-13 | 1994-05-27 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2003218028A (ja) * | 2002-01-21 | 2003-07-31 | Mitsubishi Electric Corp | 多結晶シリコン半導体薄膜の製造方法 |
WO2010021265A1 (ja) * | 2008-08-18 | 2010-02-25 | 岩谷産業株式会社 | クラスタ噴射式加工方法、半導体素子、微小電気機械素子、及び、光学部品 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5089441A (en) | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
US5294261A (en) * | 1992-11-02 | 1994-03-15 | Air Products And Chemicals, Inc. | Surface cleaning using an argon or nitrogen aerosol |
US5512106A (en) | 1993-01-27 | 1996-04-30 | Sumitomo Heavy Industries, Ltd. | Surface cleaning with argon |
JPH08107144A (ja) * | 1994-10-06 | 1996-04-23 | Fujitsu Ltd | 半導体装置の製造方法 |
US5796111A (en) | 1995-10-30 | 1998-08-18 | Phrasor Scientific, Inc. | Apparatus for cleaning contaminated surfaces using energetic cluster beams |
JPH11330033A (ja) * | 1998-05-12 | 1999-11-30 | Fraser Scient Inc | エネルギーを有するクラスタ・ビームを使用して汚染表面を洗浄する方法および装置 |
US6689284B1 (en) * | 1999-09-29 | 2004-02-10 | Kabushiki Kaisha Toshiba | Surface treating method |
KR100349948B1 (ko) * | 1999-11-17 | 2002-08-22 | 주식회사 다산 씨.앤드.아이 | 클러스터를 이용한 건식 세정 장치 및 방법 |
CN101687696A (zh) | 2007-06-29 | 2010-03-31 | 旭硝子株式会社 | 从玻璃衬底表面除去杂质的方法和处理玻璃衬底表面的方法 |
JP5006134B2 (ja) * | 2007-08-09 | 2012-08-22 | 東京エレクトロン株式会社 | ドライクリーニング方法 |
JP5964182B2 (ja) * | 2012-08-30 | 2016-08-03 | 岩谷産業株式会社 | クラスタによる加工方法 |
-
2010
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06145969A (ja) * | 1992-11-13 | 1994-05-27 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2003218028A (ja) * | 2002-01-21 | 2003-07-31 | Mitsubishi Electric Corp | 多結晶シリコン半導体薄膜の製造方法 |
WO2010021265A1 (ja) * | 2008-08-18 | 2010-02-25 | 岩谷産業株式会社 | クラスタ噴射式加工方法、半導体素子、微小電気機械素子、及び、光学部品 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022224822A1 (ja) * | 2021-04-20 | 2022-10-27 | 東京エレクトロン株式会社 | 基板処理装置及び固化膜除去方法 |
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CN102754192A (zh) | 2012-10-24 |
KR20140101450A (ko) | 2014-08-19 |
TWI514451B (zh) | 2015-12-21 |
US20130056033A1 (en) | 2013-03-07 |
US9209010B2 (en) | 2015-12-08 |
KR20120125546A (ko) | 2012-11-15 |
CN102754192B (zh) | 2017-04-19 |
TW201203329A (en) | 2012-01-16 |
KR101557604B1 (ko) | 2015-10-05 |
JP2011171584A (ja) | 2011-09-01 |
JP5490563B2 (ja) | 2014-05-14 |
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