WO2011106075A3 - A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure - Google Patents

A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure Download PDF

Info

Publication number
WO2011106075A3
WO2011106075A3 PCT/US2011/000215 US2011000215W WO2011106075A3 WO 2011106075 A3 WO2011106075 A3 WO 2011106075A3 US 2011000215 W US2011000215 W US 2011000215W WO 2011106075 A3 WO2011106075 A3 WO 2011106075A3
Authority
WO
WIPO (PCT)
Prior art keywords
low
dielectric
microelectronic
carbon distribution
controlling carbon
Prior art date
Application number
PCT/US2011/000215
Other languages
French (fr)
Other versions
WO2011106075A2 (en
Inventor
Bo Xie
Alexandros T. Demos
Daemian Raj
Sure Ngo
Kang Sub Yim
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020127024578A priority Critical patent/KR20130027009A/en
Priority to CN201180010539XA priority patent/CN102763200A/en
Priority to JP2012553896A priority patent/JP2013520792A/en
Publication of WO2011106075A2 publication Critical patent/WO2011106075A2/en
Publication of WO2011106075A3 publication Critical patent/WO2011106075A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant

Abstract

Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
PCT/US2011/000215 2010-02-23 2011-02-03 A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure WO2011106075A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020127024578A KR20130027009A (en) 2010-02-23 2011-02-03 A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
CN201180010539XA CN102763200A (en) 2010-02-23 2011-02-03 A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
JP2012553896A JP2013520792A (en) 2010-02-23 2011-02-03 Microelectronic structures containing low dielectric constant dielectrics and methods for controlling carbon partitioning within the structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/660,294 US8349746B2 (en) 2010-02-23 2010-02-23 Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
US12/660,294 2010-02-23

Publications (2)

Publication Number Publication Date
WO2011106075A2 WO2011106075A2 (en) 2011-09-01
WO2011106075A3 true WO2011106075A3 (en) 2011-11-24

Family

ID=44475803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/000215 WO2011106075A2 (en) 2010-02-23 2011-02-03 A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure

Country Status (6)

Country Link
US (1) US8349746B2 (en)
JP (1) JP2013520792A (en)
KR (1) KR20130027009A (en)
CN (1) CN102763200A (en)
TW (1) TWI511198B (en)
WO (1) WO2011106075A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI531276B (en) * 2010-10-21 2016-04-21 行政院原子能委員會核能研究所 Packaging structure and method for oled
US8853831B2 (en) 2012-03-29 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method for forming the same
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
KR101970361B1 (en) * 2012-08-20 2019-04-19 삼성디스플레이 주식회사 Organic light emitting diode device and manufacturing method thereof
US10297442B2 (en) * 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
CN105336673A (en) * 2014-07-28 2016-02-17 中芯国际集成电路制造(上海)有限公司 Interconnection structure and forming method thereof
CN104498900A (en) * 2014-12-23 2015-04-08 上海爱默金山药业有限公司 Preparation method of low-dielectric-constant thin film
CN105826237A (en) * 2015-01-06 2016-08-03 中芯国际集成电路制造(上海)有限公司 Interconnection structure and formation method thereof
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
JP6744181B2 (en) * 2016-09-26 2020-08-19 株式会社ニューフレアテクノロジー Film forming apparatus and film forming method
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10109523B2 (en) 2016-11-29 2018-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cleaning wafer after CMP
US10510852B2 (en) * 2017-11-28 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k feature formation processes and structures formed thereby
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
CN113195786A (en) 2018-10-19 2021-07-30 朗姆研究公司 Remote hydrogen plasma exposure and doped or undoped silicon carbide deposition for gap fill
US20230008496A1 (en) * 2021-07-09 2023-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure for semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060166488A1 (en) * 2003-01-31 2006-07-27 Tatsuya Usami Semiconductor device and method for manufacturing the same
US20080194102A1 (en) * 2003-02-04 2008-08-14 Nec Electronics Corporation Semiconductor device and manufacturing method thereof
US7569844B2 (en) * 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode
US7615498B2 (en) * 2004-02-03 2009-11-10 Nec Electronics Corporation Method of manufacturing a semiconductor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
US20020172766A1 (en) 2001-03-17 2002-11-21 Laxman Ravi K. Low dielectric constant thin films and chemical vapor deposition method of making same
US6455417B1 (en) 2001-07-05 2002-09-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer
WO2003015129A2 (en) 2001-08-06 2003-02-20 Advanced Technology Material, Inc. Low-k dielectric thin films and chemical vapor deposition method of making same
US7456488B2 (en) 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US7384471B2 (en) 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US7169715B2 (en) 2003-03-21 2007-01-30 Intel Corporation Forming a dielectric layer using porogens
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
WO2005071752A1 (en) * 2004-01-14 2005-08-04 International Business Machines Corporation Gradient deposition of low-k cvd materials
US7611996B2 (en) 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
US7166544B2 (en) * 2004-09-01 2007-01-23 Applied Materials, Inc. Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
US7259111B2 (en) * 2005-01-19 2007-08-21 Applied Materials, Inc. Interface engineering to improve adhesion between low k stacks
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
JP5186086B2 (en) 2005-04-11 2013-04-17 アイメック Dual damascene patterning approach
US7189658B2 (en) 2005-05-04 2007-03-13 Applied Materials, Inc. Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
WO2007061134A1 (en) * 2005-11-24 2007-05-31 Nec Corporation Method for forming porous insulating film, apparatus for manufacturing semiconductor device, method for manufacturing semiconductor device and semiconductor device
US20070134435A1 (en) 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
KR100662848B1 (en) * 2005-12-20 2007-01-02 삼성전자주식회사 Inductor integrated chip and fabrication method thereof
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US20080233336A1 (en) * 2006-09-19 2008-09-25 Giannopoulos Rene C Carpet Tiles and Methods Of Making Same
US7622403B2 (en) 2006-12-19 2009-11-24 Chartered Semiconductor Manufacturing Ltd. Semiconductor processing system with ultra low-K dielectric
US7615482B2 (en) * 2007-03-23 2009-11-10 International Business Machines Corporation Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060166488A1 (en) * 2003-01-31 2006-07-27 Tatsuya Usami Semiconductor device and method for manufacturing the same
US20080194102A1 (en) * 2003-02-04 2008-08-14 Nec Electronics Corporation Semiconductor device and manufacturing method thereof
US7615498B2 (en) * 2004-02-03 2009-11-10 Nec Electronics Corporation Method of manufacturing a semiconductor device
US7569844B2 (en) * 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode

Also Published As

Publication number Publication date
TW201203360A (en) 2012-01-16
US20110204492A1 (en) 2011-08-25
KR20130027009A (en) 2013-03-14
JP2013520792A (en) 2013-06-06
TWI511198B (en) 2015-12-01
US8349746B2 (en) 2013-01-08
CN102763200A (en) 2012-10-31
WO2011106075A2 (en) 2011-09-01

Similar Documents

Publication Publication Date Title
WO2011106075A3 (en) A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
WO2010037054A3 (en) Heteroaryl antagonists of prostaglandin d2 receptors
WO2010003120A3 (en) Antagonists of prostaglandin d2 receptors
EP2066496A4 (en) Equipment for high volume manufacture of group iii-v semiconductor materials
WO2014015935A3 (en) Fluorenes and electronic devices containing them
WO2009108173A3 (en) Methods for formation of substrate elements
WO2012003351A3 (en) Web material and method for making same
WO2011107186A3 (en) Compounds for electronic devices
WO2009108720A3 (en) Antagonists of prostaglandin d2 receptors
WO2011057706A3 (en) Materials for electronic devices
WO2013003836A3 (en) Hybrid materials and nanocomposite materials, methods of making same, and uses thereof
WO2010057118A3 (en) Heterocyclic antagonists of prostaglandin d2 receptors
WO2012058410A3 (en) Graphene-coated diamond particles, compositions and intermediate structures comprising same, and methods of forming graphene-coated diamond particles and polycrystalline compacts
IL211541A0 (en) Co-crystal compositions, methods of producing the same and uses thereof
AU2016219704A1 (en) Anti-Notch1 antibodies
WO2009069350A1 (en) Microfine structure
WO2009005613A3 (en) Stable non-disintegrating dosage forms and method of making same
WO2010085820A3 (en) Tricyclic compounds as antagonists of prostaglandin d2 receptors
WO2012151457A3 (en) Shape memory polymer material compositions, methods, and applications
WO2014107641A3 (en) Surface-modified, exfoliated nanoplatelets as mesomorphic structures in solutions and polymeric matrices
WO2012031164A3 (en) Drug delivery by carbon nanotube arrays
BRPI1015480A2 (en) curable composition, use of a curable composition, method for the manufacture of electrical insulation equipment, and use of the cured product.
WO2012069560A3 (en) Product containing nanocrystals and method for producing the same
WO2011103969A3 (en) Process for the co-encapsulation of biocidally active compounds in clay minerals functionalized by nitrogen compounds
BR112013015011A2 (en) mineral composition, substrate, method for producing a fine fraction of mineral particle, and use of a mineral composition

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180010539.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11747801

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2012553896

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20127024578

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 11747801

Country of ref document: EP

Kind code of ref document: A2