Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/483—Containers
  • H01L33/486—Containers adapted for surface mounting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/52—Encapsulations
  • H01L33/54—Encapsulations having a particular shape
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/52—Encapsulations
  • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

• Optoelectronic Semiconductor Device It becomes an optoelectronic semiconductor device
• An object to be solved is to provide an optoelectronic semiconductor device which is space-saving and compact in construction.
• this comprises a main body.
• the base body may be a surface mountable device (SMD) package.
• the main body has an upper side and one of the upper side
• a surface is formed in each case, which is formed by a part of the outer surface of the
• Basic body is formed.
• the surface at the bottom designates that outer surface of the main body, the contact carrier - for example, a printed circuit board - in
• the base body has a first connection point and a second connection point.
• the connection points of the semiconductor component are for electrical contacting of the
• the base body has a housing material.
• the housing material is a plastic material.
• the housing material is at least in places in direct contact with the connection points.
• the housing material connects the two connection points to one another.
• the two connection points do not touch.
• the connection points are then only through the housing material in
• connection points are electrically isolated from each other by the housing material.
• At least one optoelectronic component is arranged on the base body at the upper side of the base body.
• the optoelectronic component can, for example be conductively connected to the surface at the top of the body.
• the first and the second connection point can be exposed at least in places.
• the optoelectronic component can be bonded to the second connection point, soldered or glued electrically conductive.
• the optoelectronic component may be a radiation receiving end or a
• the semiconductor chip is a luminescence diode chip.
• the luminescence diode chip may be a light-emitting diode chip or a light-emitting diode chip
• Optoelectronic semiconductor device on a arranged on the upper side of the body potting, which is the
• the potting may, for example, with a silicone, an epoxy or with a mixture of the
• Optoelectronic semiconductor device at least one opening, which penetrates the potting and the housing material.
• the opening extends from an upper side of the potting facing away from the base body in the direction of the underside of the casting
• the opening has at least one side surface.
• the at least one side surface of the opening is at least in places by the potting and the
• the opening is in the lateral direction spaced apart from the optoelectronic component.
• the lateral direction is that direction which runs parallel to a main extension direction of the main body. That is, the opening is laterally of the
• Optoelectronic component arranged and runs
• an electrically conductive material is arranged at least in places in the opening.
• the electrically conductive material is
• the electrically conductive material extends at least in places at the top of the
• the electrically conductive material connects the optoelectronic component with the opening, thereby extending between the optoelectronic device and the opening at least
• the electrically conductive material may in places be arranged directly on an outer surface of the potting.
• this includes
• Optoelectronic semiconductor device has a base body which has an upper side and a lower side opposite the upper side, wherein the main body has a first
• At least one optoelectronic component is on the upper side of the main body on the main body arranged. Furthermore, the optoelectronic semiconductor component comprises a casting arranged on the upper side of the base body, which covers the optoelectronic component and the base body at least in places. Furthermore, the optoelectronic semiconductor component comprises at least one opening, which penetrates the encapsulation and the housing material, and extends from an upper side of the encapsulation facing away from the base body in the direction of the underside of the encapsulation
• Base body extends.
• the housing material connects the two connection points with each other.
• the opening is arranged in the lateral direction at a distance from the optoelectronic component, wherein at least in the opening
• the electrically conductive material extends
• the optoelectronic semiconductor component described here is based, inter alia, on the knowledge that a contacting of the optoelectronic component in one
• Bonding wire bonding is not only space consuming, but also special requirements for
• Semiconductor device geometry provides. For example, by means of such a bonding wire contacting the semiconductor device is less compact and space-saving. Furthermore, the design freedom of such
• the opening and the electrically conductive material arranged in the opening replace a bonding wire.
• Such a contact is also resistant to aging and little sensitive to external influences such as heat or mechanical stress.
• a maximum lateral extent of the opening is reduced in the direction of the underside of the base body.
• Maximum lateral extent refers to the maximum distance between two points in the opening lying in the same plane in the lateral direction. Is the
• the maximum lateral extent is the diameter
• the opening in a side view is funnel-shaped.
• the opening tapers from the top of the potting toward the bottom of the body.
• a distance in the lateral direction between the opening and the optoelectronic component is at most a maximum lateral extent of the optoelectronic component. The distance becomes thereby in the lateral direction between two in the same level
• the potting is radiation-reflecting or radiation-absorbing and at least locally in direct contact with the opto-electronic component on side surfaces, wherein a
• Radiation passage surface of the optoelectronic device is free from the potting.
• Radiation-reflecting means in particular that the encapsulation is at least 80, preferably more than 90%, reflective for incident light. Preferably, for an external observer of the semiconductor device, the reflective potting appears white.
• Example with at least one of the materials 1O2, BaSOzi, ⁇ n ⁇ ⁇ or Al x Oy are formed or contain one of the materials mentioned.
• the potting appears black or colored for an external viewer. For example, then in the potting
• the radiation passage area for example, generated within the optoelectronic device electromagnetic radiation from the
• Free means that the radiation passage area is neither covered by the potting, nor is the potting, for example, arranged downstream of the optoelectronic component along a radiation exit path of the optoelectronic component. The radiation can therefore escape unhindered from the optoelectronic component or pass through the radiation passage area into the optoelectronic component and be detected by it, for example. It is at most possible that due to the production still material residues of the reflective encapsulation are on the radiation passage area, but the radiation passage area
• Semiconductor component is applied to the radiation passage area at least one conversion layer.
• Conversion layer serves for at least partial conversion of primarily within the optoelectronic device
• Conversion layer in the vertical direction flush with the potting flush with the potting.
• the vertical direction is perpendicular to the lateral direction.
• such a semiconductor device is particularly flat.
• an outer surface of the semiconductor component formed by the conversion layer and the encapsulation is flat, so that neither a gap nor an interruption forms in the lateral direction between the conversion layer and the encapsulation.
• an optical element such as
• a lens can be applied.
• Conversion layer at least one contact opening introduced, in which the electrically conductive material at least
• the optoelectronic device is arranged in places and there contacted the optoelectronic device electrically. In other words, extends in the vertical direction, the contact opening through the conversion layer at least in places completely
• the contact opening is completely by a contiguous side surface and a Floor area and one of the floor area opposite
• the side surface may then be completely formed by the conversion layer itself, the bottom surface then completely through one through the
• the electrically conductive material fills the opening completely. That is, one of the opening in the lateral direction
• an electrically conductive connection between the first connection point and the optoelectronic component is completely through the
• the base body comprises at least one electronic component which is arranged on a side of the first connection point facing the opening at the first connection point.
• the electronic component is the same as the
• the electronic component is then also one in the
• the electronic component contains or is a protection circuit against damage due to electrostatic charging (also ESD protection circuit).
• the electronic component except for a possible serving for contacting opening completely and positively covered by the housing material. In other words, then the electronic component of the
• the housing material for example, be covered by the housing material through this for an external viewer and / or covered.
• Figures 1A, 1B, 2A, 2B, 2C and 3 show schematic
• FIG. 1A shows a schematic sectional view of an exemplary embodiment of one described here
• Optoelectronic semiconductor device 100 A basic body
• the main body 1 of the semiconductor device 100 has an upper side 11 and an underside 12 opposite the upper side 11. Furthermore, the main body 1 has a first connection point AI and a second connection point A2 as well as a housing material
• the housing material is 2
• radiopaque for example, this is the Housing material 2 formed with an epoxy, are incorporated in the radiation-absorbing and / or reflective particles. For example, it may be at the
• connection points AI and A2 are up on
• connection points AI and A2 are used for electrical
• Terminals AI and A2 are freely accessible from the underside 12 of the main body 1 and in the present case with an electrically contactable material, for example a metal.
• an optoelectronic component 3 is electrically contacted with the second connection point A2.
• the optoelectronic component 3 is a radiation-emitting element
• Semiconductor chip for example, a light-emitting diode chip.
• the housing material 2 On exposed areas of the housing material 2, the
• a reflective or radiation-absorbing potting 4 is applied. If the potting is reflective, it is to for example, introduced into these radiation-reflecting particles.
• the reflective potting 4 is formed with a silicone into which the
• Radiation-reflecting particles are introduced, for example, with at least one of the materials 1O2, BaSOzi, ⁇ n ⁇ ⁇ or Al x Oy formed or contain one of the materials mentioned. If the potting radiation absorbing can be introduced into the potting, for example, soot particles. In the present case are side surfaces 31 of the optoelectronic
• Part 3 is free from the potting 4.
• Radiation passage surface 32 is a conversion layer 8 glued, which converts, for example, of the optoelectronic component 3 primarily emitted electromagnetic radiation partially into radiation of different wavelengths. Furthermore, the optoelectronic semiconductor component 100 has an opening 5 which completely penetrates the potting 4 and the housing material 2 and extends from an upper side 41 of the potting 4 facing away from the base body 1 in the direction of the underside 12 of the base body 1. In the present case, a maximum lateral extent 35 of the
• Opening 5 starting from the top 41 of the potting 4 in the direction of the bottom 12 of the base body 1.
• the opening 5 is funnel-shaped.
• an electrically conductive material 6 is arranged in the opening 5 in the opening 5 .
• the electrically conductive material 6 is in
• junction AI with the junction AI in direct contact. Furthermore, the electrically conductive material 6 extends on the upper side 41 of the casting 4. Das means that formed on one at the top 41
• the electrically conductive material 6 is in direct contact with the potting 4 at these locations.
• the electrically conductive material 6 extends on the outer surface of the casting 4, starting from the opening 5 in FIG.
• Contact opening 81 of the conversion layer 8 is completely filled with the electrically conductive material 6. About a trained through the contact opening 81 contact surface of the optoelectronic device 3 is the optoelectronic
• the opening 5 has a spacing 53 in the lateral direction L between the opening 5 and the optoelectronic component 3, which is at most a maximum lateral
• Extension 33 of the optoelectronic component 3 is.
• the electrically insulating material of the encapsulation 4 and / or of the housing material 2 is arranged in the lateral direction L between the opening 5 and the optoelectronic component 3.
• the potting 4 and / or the housing material 2 serve as a
• the conversion layer 8 terminates flush with the encapsulation 4 in the vertical direction V.
• FIG. 1B shows a further schematic plan view of the optoelectronic device described in FIG. 1A
• FIG. 2A shows a schematic view
• Optoelectronic semiconductor device 100 Compared to the semiconductor device 100 shown in FIG. 1A, the semiconductor device 100 illustrated in FIG. 2A has elevations 22 formed by the housing material 2. In the present case, surveys 22 border both the
• the elevations 22 are formed bead-like.
• Optoelectronic semiconductor device 100 has an electronic component 9.
• the electronic component 9 is an ESD protection diode.
• the first connection point AI is electrically conductive with the electronic component 9
• FIG. 2C is a schematic bottom view of the optoelectronic illustrated in FIGS. 2A and 2B
• connection points AI and A2 from the bottom 12 of Main body 1 freely visible and electrically contacted via the bottom 12.
• FIG. 3 shows a schematic sectional view of a further exemplary embodiment of the optoelectronic device
• an optical element 10 is applied to exposed areas of the housing material 2, the conversion layer 8 and the potting 4.
• the optical element 10 is a coupling-out lens with a radiation decoupling surface 11.
• the lens is formed with a radiation-transmissive silicone.
• the optical element 10 covers the elevations 22 completely and is arranged in the lateral direction L on both sides of the elevations 22.
• detachment (also delamination) of the optical element 10 from the housing material 2 by the elevations 22 at least in the lateral direction L can be prevented.

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Citations (5)

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• 2010
  • 2010-06-24 DE DE201010024862 patent/DE102010024862A1/de not_active Withdrawn
• 2011
  • 2011-06-22 WO PCT/EP2011/060485 patent/WO2011161183A1/de active Application Filing

Patent Citations (5)

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