WO2012007634A1 - Radiation detector, pitch adapter, and method for producing a pitch adapter - Google Patents
Radiation detector, pitch adapter, and method for producing a pitch adapter Download PDFInfo
- Publication number
- WO2012007634A1 WO2012007634A1 PCT/FI2010/050600 FI2010050600W WO2012007634A1 WO 2012007634 A1 WO2012007634 A1 WO 2012007634A1 FI 2010050600 W FI2010050600 W FI 2010050600W WO 2012007634 A1 WO2012007634 A1 WO 2012007634A1
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- Prior art keywords
- pitch
- electrodes
- substrate
- sensors
- adapter
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- 230000005855 radiation Effects 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000008878 coupling Effects 0.000 claims abstract description 40
- 238000010168 coupling process Methods 0.000 claims abstract description 40
- 238000005859 coupling reaction Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- -1 tungsten nitride Chemical class 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims 1
- 238000005137 deposition process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention relates to a radiation detector, a pitch adapter, and a method for producing a pitch adapter, wherein the pitch adapter is for coupling between radiation sensors and readout circuitry of the radiation detector. In prior art solutions, AC coupling and bias resistors of the radiation sensors is provided in the sensor substrate, whereby the production of the sensor wafer is complicated. According to the present invention, AC coupling (22) is provided in the pitch adapter (25), whereby it is also possible to provide bias resistors (23) in the pitch adapter. The pitch adapter is preferably produced on a glass substrate using deposition processes which do not require the use of high temperatures. The process phases for providing mask layers on the sensor wafer can thus be minimised.
Description
Radiation detector, pitch adapter, and method for producing a pitch adapter
Field of invention The invention relates to a radiation detector, a pitch adapter, and a method for producing a pitch adapter, wherein the pitch adapter is for coupling between radiation sensors and readout circuitry of the radiation detector. The invention is especially applicable in using strip detectors for high energy physics, space measurement applications and medical imaging.
Background technology
Radiation detectors commonly include strip or pixel sensors and readout circuitry. Detectors used in high radiation environment are preferably AC (Alternating Current) coupled, meaning that there is electrical isolation of DC (Direct Current) in the signal line between the sensors and the readout circuitry. This way it is possible to avoid leakage currents to be connected into readout circuitry.
Figure 1 illustrates a prior art structure of an AC coupled radiation detector 10. The strip sensors 1 1 are arrays of pn-junction diodes that require a reverse bias voltage V+ for the sensor functionality. The bias voltage may have a value from a few tens of volts up to several hundreds of volts. The AC coupled arrangement also includes bias resistors 13 which are connected between sensor 1 1 and ground potential G. Bias resistors typically have their resistance in ΜΩ range.
When particle or photon radiation I interacts with semiconductor detector 1 1 , part of kinetic energy is transferred into electrical charge, i.e. electron-hole pairs. This process is called ionising energy loss. In contrast to ionising energy loss, part of incident energy damages the semiconductor crystal and it is called non-ionising energy loss. In electric field established by the bias voltage, the electron-hole pairs drift towards opposite directions and cause non-equilibrium transient. The drifting charge induces voltage transient over the AC coupled strip while DC current flows within the bias circuit. In order to provide charge division, and thus spatial resolution, the AC coupled strips need to float at different potential. Thus, a relatively large resistance, so called bias resistor, is needed to connect p+ doped strips. Detectors are usually heavily boron doped strips on phosphorous doped silicon wafer, i.e. p+/n-/n+ structures into so called bias line. Furthermore, bias resistor is needed in order to prevent signal charge to leak into DC biasing circuit.
The voltage transient caused by irradiating the sensor with radiation I is coupled through an isolating capacitance 12 to the readout electronics 17, which further outputs information O on the intensity of the radiation. The readout integrated circuits (IC) are generally produced with so-called deep submicron CMOS technology, which is found to be necessary in hard radiation environments but which cannot handle high bias voltages required for efficient charge transport in detectors. Therefore, in prior art arrangements the AC coupling capacitors are arranged in the semiconductor wafer 14 of the strip sensors. This means that the bias resistors of the sensors are also provided in the wafer of the strip sensors. The semiconductor wafer may be a silicon wafer, for example.
A radiation detector has usually also a pitch adapter 15 for adapting the sensor output connection to the input connection of the readout electronics 17. A pitch adapter is needed because the distance or "pitch" between successive signal connections is often different in radiation sensors and readout circuitry. A pitch adapter can be produced by depositing a metal patterned layer on a substrate of electrically isolating material. There are certain drawbacks in relation to the prior art radiation detectors described above. In order to provide the sensors, AC coupling and bias resistors within the sensor wafer means that the production of the strip sensor wafers requires at least 8 mask layers. Also, the process for depositing layers in a semiconductor wafer requires the use of demanding environmental conditions, such as high process temperatures. Therefore producing sensors in large quantities becomes complicated, costly and takes a long processing time.
Summary of the invention The object of the invention is to provide a new solution for providing a radiation detector, by which solution the above mentioned drawback can be decreased or avoided.
The object of the invention is achieved with a solution, in which the AC coupling of a radiation detector is arranged in a pitch adapter. It is possible that bias resistors are included in the pitch adapter.
A pitch adapter according to the invention for coupling signals between radiation sensors and readout circuitry of a radiation detector, wherein the pitch adapter comprises a substrate, input electrodes on the substrate for coupling with the radiation sensors, and output electrodes on the substrate for coupling with the readout electronics, is characterised in that at least part of the input electrodes are capacitively coupled with corresponding output electrodes, the at least part of the input electrodes being located at a first electrically conductive layer on the substrate, and the corresponding output electrodes being located at a second electrically conductive layer on the substrate, an electrically isolating layer being disposed between said first and second layers, wherein the capacitive coupling is provided through the isolating layer.
A radiation detector according to the invention, which radiation detector comprises semiconductor radiation sensors providing signals responsive to radiation received on the sensors, a readout circuitry for receiving and processing the signals of the sensors, and a pitch adapter for electrical coupling between the sensors and the readout circuitry, is characterised in that the pitch adapter of the radiation detector is a pitch adapter according to the invention. A method according to the invention for producing a pitch adapter for coupling between outputs of radiation sensors and inputs of readout circuitry, is characterised in that a substrate is provided, first electrodes are deposited on a first layer on the substrate, second electrodes are deposited on a second conductive layer on the substrate, and an isolating layer is deposited on the substrate, between the first and second conductive layers, capacitive coupling being formed between the first electrodes and the corresponding second electrodes through the isolating layer, and first electrical connections are provided at the first electrodes for the outputs of the radiation sensors, and second electrical connections are provided at the second electrodes for the inputs of the readout electronics.
Some preferable embodiments of the invention are described in dependent claims.
The inventive solution has significant advantages compared to the prior art. When the isolation capacitors and possible bias resistors are deposited into a pitch adapter, it is possible to provide AC coupling into a smaller area than what is required for the corresponding strip sensors. For example, when one semiconductor wafer is used for producing one strip sensor unit, it is possible to
produce the required pitch adapter unit with a substrate area the size of which is only 10% of the wafer area, for example. Thus it is possible to include ten pitch adapters into one glass wafer. The AC coupling normally requires four mask layers, whereby it is possible to achieve ten pitch adapters by depositing four mask layers into a single 100 mm glass substrate wafer. This is three additional mask layers compared to a prior art pitch adapter. On the other hand, if the corresponding mask layers would be produced on the strip sensor wafer, four additional mask layers would be needed for each ten semiconductor wafers, which results to 40 mask layers in total. Therefore, by providing the AC coupling and bias resistors on the pitch adapter wafer, it is possible to reduce the number of mask layers required for these components from 40 into 3. When producing radiation detectors in large quantities, this means significant saving in production cost and time. In order to minimise the area required for the pitch adapter, it is preferable to use the electrodes of the isolating capacitors for adapting pitch between the input and output connections. This means that the electrodes of the capacitors have such a pattern that electrical input connections of the capacitor electrodes have a first pitch, and the electrical output connections of the capacitors have a second pitch, the first and second pitch having different values. Especially, in order to minimise the required area of the pitch adaptor, it is preferable that electrodes of the capacitors have a pattern wherein electrical input connections of the capacitor electrodes correspond to the pitch of the strip sensors, and the output connections of the capacitor electrodes correspond to the pitch of the readout circuitry.
When providing the AC coupling and the bias resistors in the pitch adapter, it is also possible to use deposition processes, which have lower requirements for environmental conditions. For example, the deposition can be made in lower temperature. This further reduces the complexity, time and cost of the production process.
It is also possible to achieve a good electrical isolation by using aluminium oxide as an isolating layer. This layer is preferably deposited with Atomic Layer Deposition (ALD) process.
As a further advantage, it is possible to achieve a good homogeneity of the bias resistors by using e.g. tungsten nitride as the resistor material, which is sputtered on the substrate. Achieving a good resistor homogeneity is important in order to
achieve small variation of bias of the sensors and sensitivity between strip sensor signals.
List of drawings
In the following the invention is described with reference to the enclosed drawings, in which:
Figure 1 illustrates a prior art radiation detector as a circuit diagram,
Figure 2 illustrates an exemplary radiation detector according to an embodiment of the invention as a circuit diagram,
Figure 3 illustrates a top view of an exemplary radiation detector according to an embodiment of the invention,
Figure 4 illustrates a flow diagram of an exemplary method for producing a pitch adapter according to an embodiment of the invention,
Figure 5a illustrates a top view of mask layers for first electrodes and resistors of an exemplary pitch adapter,
Figure 5b illustrates a top view of a mask layer for second electrodes of exemplary pitch adapter, and
Figure 5c illustrates a top view of all mask layers an exemplary pitch adapter.
Figure 6 illustrates a top view on an exemplary pitch adapter wafer including six pitch adapters according to an embodiment of the invention.
Detailed description of embodiments
Figure 1 was explained in the prior art description above.
Figure 2 illustrates a circuit diagram of a radiation detector 20 according to an embodiment of the invention. A semiconductor wafer 24 includes strip sensors 21 , which can be irradiated with radiation I to be measured. The strip sensor is
connected to a bias voltage V+, which may have a value of a few hundred volts. The AC coupling capacitors 22 are included in the pitch adapter part 25, which can be made of glass substrate, for example. The strip sensors are thus DC connected to the pitch adapter.
When the AC coupling capacitors are located at the pitch adapter, it is required to include the bias resistors 23 in the pitch adapter part 25. This is preferable in order to minimize the number of mask layers in the semiconductor wafer 24. The bias resistors are connected between strip sensors 21 and ground G, whereby the high bias voltage V+ is only connected to the detector back plane. The pitch adapter is typically grounded, but it is necessary to provide high voltage tolerance in the pitch adapter in order to protect readout circuitry from possible unwanted voltage transients. Bias resistors typically have their resistance in ΜΩ range. The AC coupling capacitors include two electrodes, which are provided on corresponding two layers of the pitch adapter substrate 25. There is an isolating layer between the electrode layers to provide the electrical DC isolation. The electrodes of the capacitors can be made in such a pattern that electrical input connection of the capacitor electrodes correspond to the pitch of the strip sensors, and the output connection of the capacitors correspond to the pitch of the readout circuitry 17.
The functionality of the radiation detector of Figure 2 corresponds to the functionality of the prior art detector; irradiating the sensor with radiation I causes a change in the sensor current, which generates a change in the voltage across the bias resistor. This voltage change is coupled through a capacitance 12 to the readout electronics 17, which further outputs information O on the intensity of the radiation. Figure 3 illustrates a top view of an exemplary radiation detector 30 according to an embodiment of the invention. The radiation detector 30 has strip sensors 21 on a substrate 24, which has been cut from a semiconductor wafer. There is a pitch adapter 25 connected between the outputs of the strip sensors and the inputs of the readout circuitry chips 17. The electrical connections between the pitch adapter and the strip sensors, as well as between the pitch adapter and the readout circuitry, are preferably made by bonding. The pitch adapter includes the capacitors for providing DC isolation between the strip sensors and the readout
circuitry. The pitch adapter may also include the bias resistors and a common potential, such as ground potential, for connecting the bias resistors.
Figure 4 illustrates a flow diagram of an exemplary method for producing pitch adapters according to an embodiment of the invention, 40. Figures 5a, 5b and 5c show certain mask layers on the substrate.
A substrate wafer is first provided in phase 41 . The substrate material is preferably electrically isolating material, such as glass. In the next phase 42 a first patterned electrode layer is deposited on the substrate. The first electrode layer may include capacitor electrodes, ground connection and connections for bias resistors. The electrode material is preferably metal, such as aluminium, which can be deposited by e.g. sputtering. In all phases of production, it is useful to keep the process temperature low enough in order to avoid deformation of the substrate material. For example, when ordinary glass is used as the substrate, it is useful to keep the process temperature below 400 °C. However, it is also possible to use higher process temperatures by using e.g. silicon wafer or special high temperature glass as the substrate. In phase 43 bias resistors are provided as a further mask level on the substrate. The resistors can be deposited by e.g. sputtering tungsten nitride WNx film into the resistor structures. Based on reported experiments, a resistivity value of 200 μΩαη can be achieved with nitrogen content of 10% < x < 45%. According to tests, it is possible to achieve resistors with good homogeneity by this process. Tungsten nitride can be selectively etched with e.g. hydrogen peroxide. Figure 5a illustrates a top view of an exemplary substrate where the first electrode mask layer and the resistor mask layer 23 are visible. The first electrode mask layer includes capacitor electrodes 521 , bonding contacts 528 for the sensor wires, and ground electrode for bias resistors.
In phase 44 a layer of aluminium oxide AI2O3 is deposited as an isolating layer. This isolating layer will serve as the isolator of the capacitors 22. The thickness of the isolating layer can be 10-100 nm, for example. The layer is preferably deposited with Atomic Layer Deposition (ALD) process, which does not require high processing temperature.
In phase 45 a second, patterned electrode layer is deposited on the substrate. This electrode layer may also be metal, such as aluminium, which can be
deposited by sputtering. Figure 5b illustrates a top view of an exemplary substrate where the second electrode mask layer is visible. The electrodes for the AC coupling may have a width of 5-50 μιτι, for example. Next in phase 46 the electrical contact areas are opened by removing the aluminium oxide layer at these areas using a further mask layer. This can be made by etching. Figure 5c illustrates a top view of an exemplary substrate where all mask layers are visible; resistor mask layer 23, first electrode mask layer including capacitor electrodes 521 , bonding contacts 528 for the sensor wires, and ground electrode for bias resistors, second mask layer 522, and the opening mask layer of the electrical contacts 528. The second electrode layer also includes contacts for bonding wires to the inputs of the readout circuitry (not shown in Figures).
The produced pitch adapters are then cut off from the glass wafer, phase 47, whereby the production of the pitch adapters is completed, 48.
Figure 6 illustrates a processed wafer 600 with six pitch adapters 60. The remaining area of the wafer has been used for producing other adapters 69. It must be noted that above only some embodiments of the solution according to the invention have been described. The principle of the invention can naturally be modified within the scope of protection determined by the patent claims, e.g. in details of implementation and areas of use. The materials of the embodiments have only been mentioned as examples. For example, even if glass is a preferable substrate material for producing the pitch adapter, it is also possible to use other alternative materials, such as silicon. Also, the electrode material can be other than aluminium, such as copper. Further, the isolating layer can be made of other electrically isolating material than aluminium oxide.
It should also be noted that the circuit details of the radiation detector may vary from the above mentioned embodiments. For example, it is possible to have other common potential for connecting the bias resistors than ground potential. It is also possible to provide the electrode layers of the pitch adapter in a reversed order on the substrate, for example.
The radiation detector of the present invention is especially applicable in high- energy physics (HEP) experiments, but it can also be applied is numerous other fields, such as space applications and medical physics.
Claims
1 . Pitch adapter (25) for coupling signals between radiation sensors (24) and readout circuitry (17) of a radiation detector (20), wherein the pitch adapter comprises a substrate (25), input electrodes on the substrate for coupling with the radiation sensors, and output electrodes on the substrate for coupling with the readout electronics, characterised in that at least part of the input electrodes are capacitively coupled with corresponding output electrodes, the at least part of the input electrodes being located at a first electrically conductive layer on the substrate, and the corresponding output electrodes being located at a second electrically conductive layer on the substrate, an electrically isolating layer being disposed between said first and second layers, wherein the capacitive coupling (22) is provided through the isolating layer.
2. A pitch adapter according to claim 1 , characterised in that the substrate material is glass.
3. A pitch adapter according to claim 1 or 2, characterised in that the isolating layer comprises aluminium oxide.
4. A pitch adapter according to any of claims 1 -3, characterised in that electrodes forming the capacitive coupling have such a pattern that electrical input connections of the electrodes of the capacitive coupling have a first pitch, and the electrical output connections of the electrodes of the capacitive coupling have a second pitch, wherein the first pitch and the second pitch have different values.
5. A pitch adapter according to any of claims 1 -4, characterised in that the pitch adapter comprises a connection for common potential, such as ground, and the pitch adapter further comprises bias resistors (23) connected between the input electrodes and the common potential connection.
6. A pitch adapter according to claim 5, characterised in that the resistors comprise tungsten nitride.
7. A radiation detector (20, 30), which comprises semiconductor radiation sensors (21 ) providing signals responsive to radiation received on the sensors, a readout circuitry (17) for receiving and processing the signals of the sensors, and a pitch adapter (25) for electrical coupling between the sensors and the readout circuitry, characterised in that the pitch adapter of the radiation detector is a pitch adapter according to any of claims 1 -6.
8. A radiation detector according to claim 7, characterised in that the semiconductor radiation sensors (21 ) are provided on at least one semiconductor wafer (24), wherein the outputs of the sensors are DC coupled to the inputs of the pitch adapter.
9. A radiation detector according to claim 7 or 8, characterised in that electrodes of the capacitive coupling have a pattern wherein electrical input connections of the electrodes of the capacitive coupling correspond to the pitch of the strip sensors, and electrical output connections of the electrodes of the capacitive coupling correspond to the pitch of the readout circuitry.
10. A method for producing a pitch adapter for coupling between outputs of radiation sensors and inputs of readout circuitry, characterised in that a substrate is provided (41 ), first electrodes are deposited on a first layer on the substrate (42), second electrodes are deposited on a second conductive layer on the substrate (45), and an isolating layer is deposited on the substrate (44) between the first and second conductive layers, capacitive coupling being formed between the first electrodes and the corresponding second electrodes through the isolating layer, and first electrical connections are provided at the first electrodes for the outputs of the radiation sensors, and second electrical connections are provided at the second electrodes for the inputs of the readout electronics.
1 1 . A method according to claim 10, characterised in that electrodes of the capacitive coupling are deposited into a pattern where electrical input connections of the electrodes of the capacitive coupling have a first pitch, and the electrical output connections of the of the electrodes of the capacitive coupling have a second pitch, wherein the first pitch and the second pitch have different values.
12. A method according to claim 10 or 1 1 , characterised in that electrical input connections of the electrodes of the capacitive coupling correspond to the pitch of the strip sensors, and the electrical output connections of the electrodes of the capacitive coupling correspond to the pitch of the readout circuitry.
13. A method according to any of claims 10-12, characterised in that an electrical connection for a bias voltage is provided on the substrate, and resistors are deposited on the substrate (43) and electrically connected between the first electrodes and the connection for common potential, such as ground.
14. A method according to any of claims 10-13, characterised in that the resistors are deposited by sputtering tungsten nitride.
15. A method according to any of claims 10-14, characterised in that the electrodes are deposited by sputtering a layer of metal material, such as aluminium.
16. A method according to any of claims 10-15, characterised in that the isolating layer is provided by depositing aluminium oxide with Atomic Layer Deposition process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2010/050600 WO2012007634A1 (en) | 2010-07-16 | 2010-07-16 | Radiation detector, pitch adapter, and method for producing a pitch adapter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2010/050600 WO2012007634A1 (en) | 2010-07-16 | 2010-07-16 | Radiation detector, pitch adapter, and method for producing a pitch adapter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012007634A1 true WO2012007634A1 (en) | 2012-01-19 |
Family
ID=45468973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FI2010/050600 WO2012007634A1 (en) | 2010-07-16 | 2010-07-16 | Radiation detector, pitch adapter, and method for producing a pitch adapter |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2012007634A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999041784A1 (en) * | 1998-02-12 | 1999-08-19 | Rose Research, L.L.C. | Method and apparatus for coupling circuit components |
| US20070228279A1 (en) * | 2006-03-30 | 2007-10-04 | Hitachi, Ltd. | Radiation detection circuit |
| US20070245056A1 (en) * | 2003-10-31 | 2007-10-18 | Ihp Gmbh-Innovations For High Performance Microele | Processor Component |
| US20090243028A1 (en) * | 2004-06-03 | 2009-10-01 | Silicon Laboratories Inc. | Capacitive isolation circuitry with improved common mode detector |
-
2010
- 2010-07-16 WO PCT/FI2010/050600 patent/WO2012007634A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999041784A1 (en) * | 1998-02-12 | 1999-08-19 | Rose Research, L.L.C. | Method and apparatus for coupling circuit components |
| US20070245056A1 (en) * | 2003-10-31 | 2007-10-18 | Ihp Gmbh-Innovations For High Performance Microele | Processor Component |
| US20090243028A1 (en) * | 2004-06-03 | 2009-10-01 | Silicon Laboratories Inc. | Capacitive isolation circuitry with improved common mode detector |
| US20070228279A1 (en) * | 2006-03-30 | 2007-10-04 | Hitachi, Ltd. | Radiation detection circuit |
Non-Patent Citations (1)
| Title |
|---|
| ABDESSELAM ET AL.: "The ATLAS semiconductor tracker end-cap module", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION A, vol. 575, no. 3, 5 May 2007 (2007-05-05), pages 353 - 389 * |
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