WO2012109026A3 - Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures - Google Patents

Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures Download PDF

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Publication number
WO2012109026A3
WO2012109026A3 PCT/US2012/022766 US2012022766W WO2012109026A3 WO 2012109026 A3 WO2012109026 A3 WO 2012109026A3 US 2012022766 W US2012022766 W US 2012022766W WO 2012109026 A3 WO2012109026 A3 WO 2012109026A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
titanium dioxide
forming
rutile titanium
semiconductor structures
Prior art date
Application number
PCT/US2012/022766
Other languages
French (fr)
Other versions
WO2012109026A2 (en
Inventor
Tsai-Yu Huang
Vishwanath Bhat
Vassil Antonov
Chris Carlson
Original Assignee
Micron Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology, Inc. filed Critical Micron Technology, Inc.
Priority to CN2012800079811A priority Critical patent/CN103348455A/en
Priority to KR1020137020474A priority patent/KR101519281B1/en
Publication of WO2012109026A2 publication Critical patent/WO2012109026A2/en
Publication of WO2012109026A3 publication Critical patent/WO2012109026A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Abstract

Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.
PCT/US2012/022766 2011-02-07 2012-01-26 Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures WO2012109026A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2012800079811A CN103348455A (en) 2011-02-07 2012-01-26 Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures
KR1020137020474A KR101519281B1 (en) 2011-02-07 2012-01-26 Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/021,895 2011-02-07
US13/021,895 US8609553B2 (en) 2011-02-07 2011-02-07 Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures

Publications (2)

Publication Number Publication Date
WO2012109026A2 WO2012109026A2 (en) 2012-08-16
WO2012109026A3 true WO2012109026A3 (en) 2013-01-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/022766 WO2012109026A2 (en) 2011-02-07 2012-01-26 Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures

Country Status (5)

Country Link
US (2) US8609553B2 (en)
KR (1) KR101519281B1 (en)
CN (1) CN103348455A (en)
TW (1) TWI482221B (en)
WO (1) WO2012109026A2 (en)

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US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US8609553B2 (en) 2011-02-07 2013-12-17 Micron Technology, Inc. Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures
US8564095B2 (en) 2011-02-07 2013-10-22 Micron Technology, Inc. Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
US20140131835A1 (en) * 2012-11-12 2014-05-15 Nanya Technology Corp. Semiconductor device with rutile titanium oxide dielectric film
CN105981149B (en) * 2014-02-06 2019-11-29 丰田自动车欧洲股份有限公司 The preparation method of quantum dot array and quantum dot superlattice
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) * 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
KR20170128731A (en) * 2016-05-13 2017-11-23 삼성전자주식회사 Image sensor
CN107540014B (en) * 2016-06-27 2019-08-16 中国科学院金属研究所 A kind of heterogeneous seed mesoporous monocrystalline rutile titanium dioxide controllable growth preparation method
KR101932588B1 (en) * 2017-02-28 2018-12-27 한국과학기술연구원 Capacitor for semiconductor memory element and method for manufacturing the same
US11466382B2 (en) 2020-04-13 2022-10-11 POSTECH Research and Business Development Foundation Method for manufacturing rutile titanium dioxide layer and semiconductor device including the same
KR102559078B1 (en) * 2020-04-13 2023-07-26 포항공과대학교 산학협력단 Method for manufacturing a rutile titanium dioxide layer and a semiconductor device including the rutile titanium dioxide layer

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Also Published As

Publication number Publication date
US20140065301A1 (en) 2014-03-06
US8927441B2 (en) 2015-01-06
TW201250840A (en) 2012-12-16
WO2012109026A2 (en) 2012-08-16
US8609553B2 (en) 2013-12-17
KR20130119466A (en) 2013-10-31
CN103348455A (en) 2013-10-09
TWI482221B (en) 2015-04-21
US20120202356A1 (en) 2012-08-09
KR101519281B1 (en) 2015-05-11

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