WO2012165860A3 - METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION - Google Patents

METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION Download PDF

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Publication number
WO2012165860A3
WO2012165860A3 PCT/KR2012/004265 KR2012004265W WO2012165860A3 WO 2012165860 A3 WO2012165860 A3 WO 2012165860A3 KR 2012004265 W KR2012004265 W KR 2012004265W WO 2012165860 A3 WO2012165860 A3 WO 2012165860A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
distribution
cigs thin
uniform
manufacturing
Prior art date
Application number
PCT/KR2012/004265
Other languages
French (fr)
Other versions
WO2012165860A8 (en
WO2012165860A2 (en
Inventor
Sejin Ahn
Jae-Ho Yun
Jihye Gwak
Ara Cho
Kyung-Hoon Yoon
Kee-Shik Shin
SeoungKyu AHN
Jun-Sik Cho
Sang-Hyun Park
Young-Joo Eo
Jin-Su YOO
Joo-Hyung Park
Kyung-Am KIM
Original Assignee
Korea Institute Of Energy Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Institute Of Energy Research filed Critical Korea Institute Of Energy Research
Priority to CN201280023367.4A priority Critical patent/CN103548153B/en
Publication of WO2012165860A2 publication Critical patent/WO2012165860A2/en
Publication of WO2012165860A8 publication Critical patent/WO2012165860A8/en
Publication of WO2012165860A3 publication Critical patent/WO2012165860A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of manufacturing a CIGS thin film with a uniform Ga distribution and a method of manufacturing a solar cell using the method are provided. The method of manufacturing a CIGS thin film with a uniform Ga distribution includes: (a) forming a Cu-In-Ga-Se precursor thin film comprising a seleni de-based compound having a covalently-bonded structure on a substrate; and (b) selenizing the precursor thin film formed in step (a). Accordingly, it is possible to uniformize the Ga distribution in a CIGS thin film and thus to enhance the efficiency of a solar cell having the CIGS thin film, by changing the sputtering precursor to a seleni de-based compound instead of pure metal or alloy to suppress the segregation of Ga in the thermal process in the Se atmosphere.
PCT/KR2012/004265 2011-05-31 2012-05-30 METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION WO2012165860A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280023367.4A CN103548153B (en) 2011-05-31 2012-05-30 There is the manufacture method of the CIGS thin film of uniform Ga distribution

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110051975A KR20120133342A (en) 2011-05-31 2011-05-31 Preparation method for thin film having uniform distribution
KR10-2011-0051975 2011-05-31

Publications (3)

Publication Number Publication Date
WO2012165860A2 WO2012165860A2 (en) 2012-12-06
WO2012165860A8 WO2012165860A8 (en) 2013-01-31
WO2012165860A3 true WO2012165860A3 (en) 2013-03-28

Family

ID=47260076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004265 WO2012165860A2 (en) 2011-05-31 2012-05-30 METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION

Country Status (3)

Country Link
KR (1) KR20120133342A (en)
CN (1) CN103548153B (en)
WO (1) WO2012165860A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103014643A (en) * 2012-12-11 2013-04-03 中国科学院电工研究所 Method for preparing light absorption layer of CIGS (Copper, Indium, Gallium and Selenium) thin film solar cell
CN104051569B (en) * 2013-03-12 2017-09-26 台湾积体电路制造股份有限公司 Thin-film solar cells and its manufacture method
JP6297038B2 (en) * 2013-07-12 2018-03-20 ソーラーフロンティア株式会社 Thin film solar cell and method for manufacturing thin film solar cell
WO2017122842A1 (en) * 2016-01-13 2017-07-20 주식회사 메카로 Solar cell comprising cigs light absorbing layer and method for manufacturing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048442A (en) * 1996-10-25 2000-04-11 Showa Shell Sekiyu K.K. Method for producing thin-film solar cell and equipment for producing the same
KR20090043245A (en) * 2007-10-29 2009-05-06 한국과학기술원 Cigs absorber layer fabrication method and solar cell including cigs absorber layer
KR20100058751A (en) * 2008-11-25 2010-06-04 한국광기술원 Method of fabricating absorption layer of solar cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
CN101299446A (en) * 2008-05-30 2008-11-05 南开大学 Selenide forerunner thin film and method for producing film cell through rapid selenium vulcanizing thermal treatment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048442A (en) * 1996-10-25 2000-04-11 Showa Shell Sekiyu K.K. Method for producing thin-film solar cell and equipment for producing the same
KR20090043245A (en) * 2007-10-29 2009-05-06 한국과학기술원 Cigs absorber layer fabrication method and solar cell including cigs absorber layer
KR20100058751A (en) * 2008-11-25 2010-06-04 한국광기술원 Method of fabricating absorption layer of solar cell

Also Published As

Publication number Publication date
CN103548153B (en) 2016-08-31
WO2012165860A8 (en) 2013-01-31
CN103548153A (en) 2014-01-29
KR20120133342A (en) 2012-12-10
WO2012165860A2 (en) 2012-12-06

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