WO2015047952A1 - Metallization of solar cells using metal foils - Google Patents
Metallization of solar cells using metal foils Download PDFInfo
- Publication number
- WO2015047952A1 WO2015047952A1 PCT/US2014/056794 US2014056794W WO2015047952A1 WO 2015047952 A1 WO2015047952 A1 WO 2015047952A1 US 2014056794 W US2014056794 W US 2014056794W WO 2015047952 A1 WO2015047952 A1 WO 2015047952A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- metal foil
- metal layer
- solar cell
- cell structure
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 239
- 239000002184 metal Substances 0.000 title claims abstract description 239
- 239000011888 foil Substances 0.000 title claims abstract description 122
- 238000001465 metallisation Methods 0.000 title description 5
- 125000006850 spacer group Chemical group 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims description 48
- 238000000059 patterning Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000000608 laser ablation Methods 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2014327036A AU2014327036B2 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
BR112016006585-9A BR112016006585B1 (en) | 2013-09-27 | 2014-09-22 | METHOD FOR MANUFACTURING SOLAR CELL AND PLURALITY OF SOLAR CELL STRUCTURES |
MYPI2016000345A MY175353A (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
SG11201601079QA SG11201601079QA (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
KR1020167010446A KR102313263B1 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
JP2016545766A JP6526020B2 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
MX2016003561A MX356833B (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils. |
EP14847743.3A EP3050122B1 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
CN201480046849.0A CN105474412B (en) | 2013-09-27 | 2014-09-22 | Solar cell is metallized using metal foil |
SA516370630A SA516370630B1 (en) | 2013-09-27 | 2016-02-27 | Metallization of solar cells using metal foils |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/040,047 US9437756B2 (en) | 2013-09-27 | 2013-09-27 | Metallization of solar cells using metal foils |
US14/040,047 | 2013-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015047952A1 true WO2015047952A1 (en) | 2015-04-02 |
Family
ID=52738910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2014/056794 WO2015047952A1 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
Country Status (14)
Country | Link |
---|---|
US (3) | US9437756B2 (en) |
EP (1) | EP3050122B1 (en) |
JP (1) | JP6526020B2 (en) |
KR (1) | KR102313263B1 (en) |
CN (2) | CN105474412B (en) |
AU (1) | AU2014327036B2 (en) |
BR (1) | BR112016006585B1 (en) |
CL (1) | CL2016000712A1 (en) |
MX (1) | MX356833B (en) |
MY (1) | MY175353A (en) |
SA (1) | SA516370630B1 (en) |
SG (1) | SG11201601079QA (en) |
TW (1) | TWI633677B (en) |
WO (1) | WO2015047952A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016107802A1 (en) | 2016-04-27 | 2017-11-02 | Universität Stuttgart | Process for the preparation of back-contacted solar cells made of crystalline silicon |
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US9911874B2 (en) * | 2014-05-30 | 2018-03-06 | Sunpower Corporation | Alignment free solar cell metallization |
CN106687617B (en) * | 2014-07-15 | 2020-04-07 | 奈特考尔技术公司 | Laser transfer IBC solar cell |
US9461192B2 (en) | 2014-12-16 | 2016-10-04 | Sunpower Corporation | Thick damage buffer for foil-based metallization of solar cells |
US9620661B2 (en) * | 2014-12-19 | 2017-04-11 | Sunpower Corporation | Laser beam shaping for foil-based metallization of solar cells |
US9997651B2 (en) | 2015-02-19 | 2018-06-12 | Sunpower Corporation | Damage buffer for solar cell metallization |
US20160380120A1 (en) * | 2015-06-26 | 2016-12-29 | Akira Terao | Metallization and stringing for back-contact solar cells |
US9722103B2 (en) * | 2015-06-26 | 2017-08-01 | Sunpower Corporation | Thermal compression bonding approaches for foil-based metallization of solar cells |
US9634178B1 (en) * | 2015-12-16 | 2017-04-25 | Sunpower Corporation | Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells |
US9831377B2 (en) | 2016-02-29 | 2017-11-28 | Sunpower Corporation | Die-cutting approaches for foil-based metallization of solar cells |
US11424373B2 (en) | 2016-04-01 | 2022-08-23 | Sunpower Corporation | Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells |
US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
US20180006172A1 (en) * | 2016-07-01 | 2018-01-04 | Sunpower Corporation | Metallization structures for solar cells |
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US10115855B2 (en) * | 2016-09-30 | 2018-10-30 | Sunpower Corporation | Conductive foil based metallization of solar cells |
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US11362234B2 (en) * | 2018-04-06 | 2022-06-14 | Sunpower Corporation | Local patterning and metallization of semiconductor structures using a laser beam |
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JP6526020B2 (en) | 2019-06-05 |
KR102313263B1 (en) | 2021-10-14 |
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MX2016003561A (en) | 2016-06-02 |
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AU2014327036A1 (en) | 2015-12-17 |
BR112016006585A2 (en) | 2017-08-01 |
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US20180097129A1 (en) | 2018-04-05 |
AU2014327036B2 (en) | 2018-07-05 |
CN108039380B (en) | 2020-07-10 |
MY175353A (en) | 2020-06-22 |
CN108039380A (en) | 2018-05-15 |
CL2016000712A1 (en) | 2016-12-16 |
EP3050122B1 (en) | 2020-06-17 |
EP3050122A1 (en) | 2016-08-03 |
CN105474412B (en) | 2018-01-02 |
US20160343888A1 (en) | 2016-11-24 |
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US9437756B2 (en) | 2016-09-06 |
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