WO2015160718A3 - Flip light emitting diode chip and method - Google Patents

Flip light emitting diode chip and method Download PDF

Info

Publication number
WO2015160718A3
WO2015160718A3 PCT/US2015/025604 US2015025604W WO2015160718A3 WO 2015160718 A3 WO2015160718 A3 WO 2015160718A3 US 2015025604 W US2015025604 W US 2015025604W WO 2015160718 A3 WO2015160718 A3 WO 2015160718A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
contact
contact pad
pad
Prior art date
Application number
PCT/US2015/025604
Other languages
French (fr)
Other versions
WO2015160718A2 (en
Inventor
Pao Chen
Chung Chi Chang
Chang Han
Original Assignee
Starlite Led Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/252,604 external-priority patent/US9006005B2/en
Application filed by Starlite Led Inc. filed Critical Starlite Led Inc.
Publication of WO2015160718A2 publication Critical patent/WO2015160718A2/en
Publication of WO2015160718A3 publication Critical patent/WO2015160718A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

A method of fabricating a light emitting diode device comprises depositing conductive material to cover a portion of surface of a conductive and reflective layer to form a first contact pad, and surfaces between adjacent first trenches to form a second contact pad; and depositing a first passivation layer over uncovered portion of surface of the conductive and reflective layer to form a first planar passivation contact surface between the first contact pad and the second trench and depositing bonding material to cover a portion of surface of the first contact pad, a portion of the second contact pad and a portion of the first planar passivation contact to form a first light emitting diode bonding pad on the first contact pad, a second light emitting diode bonding pad on the second contact pad, and a third light emitting diode bonding pad on the first planar passivation contact.
PCT/US2015/025604 2014-04-14 2015-04-13 Flip light emitting diode chip and method of fabricating the same WO2015160718A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/252,604 2014-04-14
US14/252,604 US9006005B2 (en) 2012-05-17 2014-04-14 Flip light emitting diode chip and method of fabricating the same

Publications (2)

Publication Number Publication Date
WO2015160718A2 WO2015160718A2 (en) 2015-10-22
WO2015160718A3 true WO2015160718A3 (en) 2015-12-10

Family

ID=54324698

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/025604 WO2015160718A2 (en) 2014-04-14 2015-04-13 Flip light emitting diode chip and method of fabricating the same

Country Status (1)

Country Link
WO (1) WO2015160718A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7177360B2 (en) * 2020-07-22 2022-11-24 日亜化学工業株式会社 Light-emitting element and light-emitting device
TWI793492B (en) * 2021-01-07 2023-02-21 軒帆光電科技股份有限公司 Composite material substrate for light-emitting element and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466635A (en) * 1994-06-02 1995-11-14 Lsi Logic Corporation Process for making an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
US20130020606A1 (en) * 2011-07-19 2013-01-24 Han Chang Circuit board with thermo-conductive pillar
US20130306964A1 (en) * 2012-05-17 2013-11-21 Starlite LED Inc Flip light emitting diode chip and method of fabricating the same
US20140097454A1 (en) * 2011-02-16 2014-04-10 Cree, Inc. Light emitting devices for light emitting diodes (leds)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466635A (en) * 1994-06-02 1995-11-14 Lsi Logic Corporation Process for making an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
US20140097454A1 (en) * 2011-02-16 2014-04-10 Cree, Inc. Light emitting devices for light emitting diodes (leds)
US20130020606A1 (en) * 2011-07-19 2013-01-24 Han Chang Circuit board with thermo-conductive pillar
US20130306964A1 (en) * 2012-05-17 2013-11-21 Starlite LED Inc Flip light emitting diode chip and method of fabricating the same

Also Published As

Publication number Publication date
WO2015160718A2 (en) 2015-10-22

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