WO2016035063A1 - Photonic crystal waveguide - Google Patents

Photonic crystal waveguide Download PDF

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Publication number
WO2016035063A1
WO2016035063A1 PCT/IL2015/050795 IL2015050795W WO2016035063A1 WO 2016035063 A1 WO2016035063 A1 WO 2016035063A1 IL 2015050795 W IL2015050795 W IL 2015050795W WO 2016035063 A1 WO2016035063 A1 WO 2016035063A1
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WO
WIPO (PCT)
Prior art keywords
waveguide
photonic crystal
core
light
phase
Prior art date
Application number
PCT/IL2015/050795
Other languages
French (fr)
Inventor
Shmuel GOLDIN
Original Assignee
Oriel Silicon Photonics Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oriel Silicon Photonics Ltd. filed Critical Oriel Silicon Photonics Ltd.
Publication of WO2016035063A1 publication Critical patent/WO2016035063A1/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals

Abstract

The invention provides a multilayer photonic crystal waveguide having a core extending through the waveguide that is bounded on two sides by multilayer photonic crystal mirrors that constrain light on two sides of the core. Lateral constraint of the light is provided by two lateral mirrors. The waveguide may be phase-tunable by applying a voltage to alter a refractive index in the core and optionally in one or more interior mirror layers leading to a shifted dispersion relation of the waveguide.

Description

PHOTONIC CRYSTAL WAVEGUIDE
FIELD OF THE INVENTION
The present invention relates to photonic bandgap structures, and to devices comprising such structures. It also relates to optical waveguides, optical phase shifters and optical modulators.
BACKGROUND OF THE INVENTION
A photonic crystal (PhC) is a periodic optical microstructure that affects the motion of photons in a way similar to the way that ionic lattices affect electrons in solids. A one-dimensional photonic crystal can be constructed by stacking layers of different dielectric constant that are deposited or adhered together to form a band gap in a single direction.
When coherent light travels in the crystal, the Bragg reflected waves interfere with the original beam. The interference completely changes the distribution of the electromagnetic fields in the crystal, and the dispersion relation of the propagating waves. When the frequency of the light falls in the so-called bandgap of the photonic crystal, it does not propagate in the crystal. When such light is incident on the surface of the crystal, it is reflected. The photonic crystal thus behaves like a mirror for light with frequency lying inside the bandgap. If a line defect is formed in the crystal and light is sent into this line defect, it will be guided through this line defect until it propagates out of the crystal. Hence, photonic crystals can be used to construct optical waveguides.
In a PBG structure, a defect layer is inserted between two PGC stack layers. Light incident perpendicularly to the stack of a specific wavelength can be transmitted and other wavelengths are reflected. One application of PBG structures is in channel drop filters which are used in wavelength division multiplexing (WDM) devices to maximize usage of existing optical fibers. In a tunable PBG, the resonance frequency of the resonator can be modulated by changing the refractive index of the defect layer. Various methods have been used to accomplish tuning, such as thermal tuning, micro- electro-mechanical system tuning, and electro-optical tuning.
International Patent Publication WO 03/083533 to Kimerling et al, for example, discloses a photonic bandgap device having first and second mirror regions formed from alternating layers of different materials. An air gap cavity region (the defect layer) is positioned between the first mirror region and second region. The air gap cavity changes its thickness when a voltage is applied so that the device can be tuned to a particular resonant wavelength.
US Patent Publication 2005/0259922 to Akiyama et al discloses an optical device having at least two photonic bandgap crystal (PGC) stacks that are each comprised of alternating layers of high and low refractive index materials. A defect region is formed in a cavity region between the at least stacks so as to provide the properties needed to reflect light received by the optical device.
US patent No. 7,412,144 to Bloemer et al discloses a waveguide having upper and lower cladding regions. A core of the waveguide is made of a non-linear optical polymer positioned between the upper and lower cladding regions made of photonic band gap materials. A first electrode is connected to the upper cladding region and a second electrode is connected to the lower cladding region. By applying a voltage to the electrodes, the light propagated in the core can be modulated.
The propagation constant β of an optical wave is the change in phase per unit distance that occurs as the wave propagates through a medium or a waveguide, and is measured in units of radians per meter. The function ω(β), which gives the angular frequency of the wave ω as a function of β in a given medium or a waveguide, is known as the dispersion relation of the medium or waveguide.
SUMMARY OF THE INVENTION
The present invention provides a photonic crystal waveguide. The photonic crystal waveguide includes a core that is bordered on two opposite sides by one- dimensional photonic crystal mirrors. Lateral confinement of the light is provided by two lateral reflecting systems.
In one embodiment of the invention, the core incorporates a structure or a material having a refractive index that can be altered by an external voltage. The dispersion relation of the waveguide then changes in response to the external votage. For example, the core may contain a PN junction, in which case the dispersion relation can be altered by application of an electric voltage to the device.
One or more phase-tunable waveguides of the invention may be incorporated into an interferometer such as a Mach-Zehnder interferometer. An input light beam is split by a beam splitter into two beams that are input to separate waveguides, where at least one of the wave guides is a phase-tunable waveguide in accordance with the invention. The output beams of the waveguides are combined to form a resultant beam whose amplitude will depend on the phase difference of the beams output from the wave guides. Since at least one of the waveguides is phase-tunable wave guide the amplitude of the resultant beam can be modulated to generate an amplitude -modulated light signal.
The larger the difference in the propagation constant of the waveguide between the unbiased and the biased states, the larger the variation in the phase of the output beam per unit length that can be obtained. Thus, for a given required phase-shift (for example, π or π/4 in the Mach-Zehnder interferometer), the length of the device can be made smaller. Consequently, it is preferable to use light having a propagation constant β near a critical point (maximum, minimum or point of inflection) of the dispersion curve of the waveguide. This corresponds to a point in the dispersion relation where the group velocity vg of the light, defined by vg=3co/3p, is close to 0.
The invention thus provides a multilayer photonic crystal waveguide comprising:
(a) a core extending through the waveguide,
(b) a first multilayer photonic crystal mirror adjacent to the core constraining light in a first direction from the core, the first direction being perpendicular to a propagation direction of light in the waveguide;
(c) a second multilayer photonic crystal mirror adjacent to the core constraining light in a second direction from the core, the second direction being opposite to the first direction, and the second direction being perpendicular to the propagation direction of light in the waveguide;
(d) a mirror constraining light in a third direction from the core, the third direction being perpendicular to the first and second directions and the third direction being perpendicular to the propagation direction of light in the waveguide; and
(e) a mirror constraining light in a fourth direction from the core, the fourth direction being opposite to the third direction and the fourth direction being perpendicular to the propagation direction of light in the waveguide.
In the multilayer photonic crystal waveguide of the invention, the mirrors may constrain light in the third and the fourth directions by total internal reflection. The mirrors constraining light in the third and the forth directions may comprise photonic crystals.
The multilayer photonic crystal waveguide may be stepped so as to have a first set of regions perpendicular to the waveguide propagation direction and a second set of regions perpendicular to the waveguide propagation direction and to the second set of regions.
One or more of the core and the multilayer mirrors are made from one or more materials selected from Si, SiC, Si3N4 and Si02.
The multilayer photonic crystal waveguide of the invention may further comprise:
(a) a first electrode in contact with one or more of the core and an interior layer of one of the multilayer photonic crystal mirrors; and
(b) a second electrode in contact with one or more of the core and an interior layer of one of the multilayer photonic crystal mirrors; wherein, when a voltage is applied between the electrodes, a refractive index in the core and optionally in one or more interior mirror layers is altered leading to a shifted dispersion relation of the waveguide, thus rendering the waveguide phase-tunable. In the phase-tunable waveguide, the core is formed from a semiconductor material. The waveguide may, for example, a reverse biased PN diode having a depletion layer wherein the depletion layer of the PN junction changes when a voltage is applied between the electrodes to alter the refractive index of one or more of the materials of the waveguide. The core may further comprise a structure enabling charge- carrier injection into the core. The structure enabling charge-carrier injection into the core may be, for example, a forward biased PIN diode. The phase-tunable photonic crystal waveguide may comprise a capacitor. In the phase-tunable photonic crystal waveguide, a change in the dispersion relation may occur, for example, by an electro-optical effect or by an electro-absorption effect.
The invention also provides an interferometer comprising one or more phase- tunable waveguides of the invention.
The invention further provides a system comprising:
(a) light source configured to generate light having a vacuum wavelength λ; and
(b) a phase-tunable photonic crystal waveguide of the invention having an unshifted dispersion relation such that the propagation constant of the light having a vacuum wavelength λ in the waveguide (β) is between 0 to 0.6— .
A
BRIEF DESCRIPTION OF THE DRAWINGS
In order to understand the invention and to see how it may be carried out in practice, a preferred embodiment will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:
Fig. 1 shows a phase-tunable wave guide in accordance with one embodiment of the invention;
Fig. 2 shows a phase-tunable wave guide in accordance with second embodiment of the invention;
Fig. 3 shows a phase-tunable wave guide in accordance with a third embodiment of the invention;
Fig. 4 shows a phase-tunable wave guide in accordance with a fourth embodiment of the invention; and
Fig. 5 shows an interferometer comprising a phase-tunable wave guide of the invention; and
Fig. 6 shows a theoretical dispersion curve for Si in an unbiased state and in a biased state.
DESCRIPTION OF THE INVENTION
Fig. 1 shows a cross-section of a phase-tunable photonic crystal waveguide 100 in accordance with one embodiment of the invention. The phase- tunable photonic crystal waveguide 100 includes a core 101 that is bordered on one side by a first multilayer photonic crystal mirror 102a and on a second side by a second multilayer photonic crystal mirror 102b. The core 101 is flanked by mirrors 103a and 103b which reflect the light laterally by means of total internal reflection. A first electrode 104a is in contact with the core and/or with an interior layer of the multilayer photonic crystal mirror 102a and/or with an interior layer of the multilayer photonic crystal mirror 102b, and a second electrode 104b is in contact with the core and/or with an interior layer of the multilayer photonic crystal mirror 102a and/or with an interior layer of the multilayer photonic crystal mirror 102b.
The multilayer photonic crystal mirrors can be formed by repeated deposition or epitaxy of a sequence of layers with different refractive indexes The sequence may consist of two or more layers The sequence may be repeated any number of times. In particular, the layers can made of Si, SiC, Si3N4 or Si02. For example, the sequence may consist of two layers where the high index layer may be Si, SiC, or Si3N4, while the low index layers may be formed from Si02 or Si3N4. The thickness of the layers may be, for example, around a quarter wavelength of the light in those materials, i.e around 0.09 μιη, 0.13 μιη, 0.16 μιη and 0.22 μιη, for Si, SiC, Si3N4 and Si02, respectively, if the vacuum wavelength of light is 1.3 μιη. (1 μιη being one micron, i.e. 10"6 metres).
The core 101 may be formed from a semiconductor material, such as Si, and may include a reverse biased PN diode. When a voltage is applied between the electrodes 104a and 104b, the size of the depletion layer of the PN junction changes. This alters the refractive index of the core which, in turn, leads to a change in the dispersion relation of the waveguide (typically, a downward frequency shift when the carrier concentration is reduced and an upward shift when the carrier concentration is increased). When light propagates through the waveguide perpendicular to the plane of the cross section shown in Fig. 1 (parallel to the stack layers), the light experiences a phase shift equal to the propagation constant β of the waveguide times the length of the core, which may be around 100 μιη or less. Since the propagation constant β of the waveguide can be modulated by application of an electric voltage, the phase of the light as it exits the waveguide can be modulated.
Depending on the structure of the core and the layers, the change in the refractive index and hence in the dispersion relation of the waveguide can occur by various mechanisms. The change in the charge carrier concentration may be by carrier depletion (e.g. in a reverse biased PN diode, as described above). Alternatively, the change in the charge carrier concentration may be by carrier injection (e.g. in a forward biased PIN diode). As yet another example, the change in the charge carrier concentration may be by carrier accumulation (such as in a metal-oxide semiconductor (MOS) capacitor). The change in dispersion relation may also occur by electro-optics effects (e.g. Kerr, Pockels effects) or electro-absorption effects (e.g. QCSE, Frank- Keldysh effect).
Fig. 2 shows a phase-tunable wave guide 200 in accordance with another embodiment of the invention. The phase-tunable waveguide 200 has several components in common with the phase-tunable wave guide 100 shown in Fig. 1, and similar components are indicated by the same reference numerals without further comment. In the phase-tunable waveguide 200, the core 101 is flanked by multilayer photonic crystal mirrors 203a and 203b which constrain light laterally. As with the phase-tunable wave guide 100 (Fig. 1), the electrode 104a is in contact with the core and/or with an interior layer of the multilayer photonic crystal mirror 102a and/or with an interior layer of the multilayer photonic crystal mirror 102b, and a second electrode 104b is in contact with the core and/or with an interior layer of the multilayer photonic crystal mirror 102a and/or with an interior layer of the multilayer photonic crystal mirror 102b.
Fig. 3 shows a phase-tunable wave guide 300 in accordance with another embodiment of the invention. The phase-tunable waveguide 300 has several components in common with the phase-tunable wave guides 100 and 200 shown in Figs. 1 and 2, and similar components are indicated by the same reference numerals without further comment. The phase-tunable wave guide 300 includes mirrors 302a and 302b which confine the light due to total internal reflection.
Fig. 4 shows a phase-tunable wave guide 400 in accordance with another embodiment of the invention. The phase-tunable waveguide 400 has several components in common with the phase-tunable wave guides 100, 200, and 300 shown in Figs. 1 2, and 3, and similar components are indicated by the same reference numerals without further comment. Multilayer photonic crystal mirror 402 are stepped so as to have horizontal regions 405, 406 and 407 parallel to the photonic crystal mirror 102b, and two vertical regions 402v perpendicular to the horizontal regions 405, 406, and 407. The horizontal regions 405, 406 and 407 constrain light vertically (as do the photonic crystal mirrors 102b) while the vertical regions 402v constrain light laterally. One or more phase-tunable waveguides of the invention may be incorporated into an interferometer such as a Mach-Zehnder interferometer 500 shown in Fig. 5. An The light beam propagating in the waveguide 510 is split by a beam splitter 520 into a first beam in the waveguide 530 and second light beam in the waveguide 540. The first and second light beams 530 and 540 are input to a waveguide 552 and a waveguide 554 respectively, where at least one of the waveguides 552 and 554 is a phase-tunable waveguide in accordance with the invention. The output beams of the waveguides 552 and 554 (propagating in the waveguides 755 and 756 respectively) are combined by a beam combiner 560 into a resultant light beam 565. The amplitude of the resultant beam 765 will depend on the phase difference of the output beams 555 and 556. Since the dispersion relation for at least one of the phase-tunable wave guides 752 and 754 can be modulated by applying an external voltage between the electrodes, the amplitude of the resultant beam 565 can be modulated to generate an amplitude-modulated light signal. When the phase difference between the output beams 556 and 555 is 0, constructive interference occurs and the amplitude of the resultant beam 565 is maximal. When the phase difference between the output beams 556 and 555 is π, destructive interference occurs and the amplitude of the resultant beam 565 is 0.
Fig. 6 shows a calculated dispersion curve for a waveguide with a core made of Si and incorporating a reversed biased PN junction in two states: an unbiased state and when biased by an electric field. The dispersion curve for the core in the biased state is shifted downwards and to the right from the curve of the unbiased core. Both curves have increasing slope with increasing β. The slope approaches 0 as β approaches 0. Thus, in order to obtain a relatively large difference in the propagation constant between the unbiased and biased states of the core, it is preferable to build the waveguide so that the light of a given frequency ω would have its β near the minimum of the dispersion curve. The larger the difference in the propagation constant between the unbiased and the biased states, the larger the variation in the phase per unit length of the waveguide can be obtained. The phase difference π (or, practically π/2) between the output beams 556 and 555 in an interferometer (Fig. 5) is then achieved at a shorter length of the device. More generally, for any waveguide structure, it is preferable to use light having a propagation constant β near a critical point (maximum, minimum or point of inflection) of the dispersion curve. This corresponds to a point in the dispersion relation where the group velocity vg of the light is close to 0.

Claims

A multilayer photonic crystal waveguide comprising:
(a) a core extending through the waveguide,
(b) a first multilayer photonic crystal mirror adjacent to the core constraining light in a first direction from the core, the first direction being perpendicular to a propagation direction of light in the waveguide;
(c) a second multilayer photonic crystal mirror adjacent to the core constraining light in a second direction from the core, the second direction being opposite to the first direction, and the second direction being perpendicular to the propagation direction of light in the waveguide;
(d) a mirror constraining light in a third direction from the core, the third direction being perpendicular to the first and second directions and the third direction being perpendicular to the propagation direction of light in the waveguide; and
(e) a mirror constraining light in a fourth direction from the core, the fourth direction being opposite to the third direction and the fourth direction being perpendicular to the propagation direction of light in the waveguide.
The multilayer photonic crystal waveguide according to Claim 1 wherein the mirrors constrain light in the third and the fourth directions by total internal reflection.
The multilayer photonic crystal waveguide according to Claim 1 wherein the mirrors constraining light in the third and the forth directions comprise photonic crystals.
4. The multilayer photonic crystal waveguide according to any one of the previous claims wherein one or more of the multilayer photonic crystal mirrors are stepped so as to have a first set of regions perpendicular to the waveguide propagation direction and a second set of regions perpendicular to the waveguide propagation direction and to the second set of regions.
The multilayer photonic crystal waveguide according to one of the previous claims wherein one or more of the core and the multilayer mirrors are made from one or more materials selected from Si, SiC, Si3N4. and Si02.
The multilayer photonic crystal waveguide according to any one of the previous claims further comprising:
(a) a first electrode in contact with one or more of the core and an interior layer of one of the multilayer photonic crystal mirrors; and
(b) a second electrode in contact with one or more of the core and an interior layer of one of the multilayer photonic crystal mirrors; wherein, when a voltage is applied between the electrodes, a refractive index in the core and optionally in one or more interior mirror layers is altered leading to a shifted dispersion relation of the waveguide, thus rendering the waveguide phase-tunable.
The phase-tunable photonic crystal waveguide according to Claim 6 wherein the core is formed from a semiconductor material.
The phase-tunable photonic crystal waveguide according to Claim 7 wherein the waveguide further comprises a reverse biased PN diode having a depletion layer wherein the depletion layer of the PN junction changes when a voltage is applied between the electrodes to alter the refractive index of one or more of the materials of the waveguide.
The phase-tunable photonic crystal waveguide according to Claim 7 wherein the core further comprises a structure enabling charge-carrier injection into the core.
10. The phase-tunable photonic crystal waveguide according to Claim 10 wherein the structure enabling charge-carrier injection into the core is a forward biased PIN diode
11. The phase-tunable photonic crystal waveguide according to Claim 7 comprising a capacitor.
12. The phase-tunable photonic crystal waveguide according to Claim 6 wherein a change in the dispersion relation occurs by an electro-optical effect or by an electro-absorption effect.
13. An interferometer comprising one or more phase-tunable waveguides according to any one of Claims 6 to 13.
14. A system comprising:
(a) A light source configured to generate light having a vacuum wavelength λ; and
(b) a phase-tunable photonic crystal waveguide according to any one of Claims 6 to 14 having an unshifted dispersion relation such that the propagation constant of the light having a vacuum wavelength λ in the waveguide (β) is between 0 to 0.6
PCT/IL2015/050795 2014-08-01 2015-08-02 Photonic crystal waveguide WO2016035063A1 (en)

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GB1413730.1A GB2528896B (en) 2014-08-01 2014-08-01 Methods and apparatus for phase shifting and modulation of light
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050259922A1 (en) * 2004-05-24 2005-11-24 Shoji Akiyama Photonic bandgap modulator, amplifier, DEMUX, and TDM devices
EP1659445A1 (en) * 2003-06-13 2006-05-24 Nippon Telegraph and Telephone Corporation Variable wavelength optical filter
US7164821B2 (en) * 2001-09-10 2007-01-16 California Institute Of Technology Tunable resonant cavity based on the field effect in semiconductors

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AU2003258781A1 (en) * 2002-03-29 2003-10-13 Massachusetts Institute Of Technology Low voltage tunable filtre with photonic crystal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164821B2 (en) * 2001-09-10 2007-01-16 California Institute Of Technology Tunable resonant cavity based on the field effect in semiconductors
EP1659445A1 (en) * 2003-06-13 2006-05-24 Nippon Telegraph and Telephone Corporation Variable wavelength optical filter
US20050259922A1 (en) * 2004-05-24 2005-11-24 Shoji Akiyama Photonic bandgap modulator, amplifier, DEMUX, and TDM devices

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