WO2017101543A1

WO2017101543A1 - Compression ring and semiconductor processing equipment

Info

Publication number: WO2017101543A1
Application number: PCT/CN2016/099697
Authority: WO
Inventors: 郭浩; 赵梦欣; 郑金果; 侯珏; 荣延栋
Original assignee: 北京北方微电子基地设备工艺研究中心有限责任公司
Priority date: 2015-12-14
Filing date: 2016-09-22
Publication date: 2017-06-22
Also published as: CN106876316A; TWI609453B; TW201721798A

Abstract

Disclosed are a compression ring and a semiconductor processing equipment. The compression ring comprises a compression ring body (11, 21) on the inner ring wall of which a plurality of fixing portions (121) and a plurality of shielding portions (122) are provided at intervals in circumferential direction thereof, wherein a plurality of the fixing portions (121) and a plurality of the shielding portions (122) are arranged alternately, the fixing portions (121) serving to compress a first edge area of the upper surface of a wafer (13, 24) and the shielding portions (122) serving to shield a second edge area of the upper surface of the wafer (13, 24). The above-described compassion ring can solve the problem that metal plating coating is deposition on the side or back side of the wafer (13, 24), so that the process results can be improved.

Description

Pressure ring and semiconductor processing equipment

Technical field

The present invention relates to the field of semiconductor manufacturing, and in particular to a pressure ring and a semiconductor processing apparatus.

Background technique

In the manufacturing process of an integrated circuit, a physical vapor deposition (PVD) technique is generally used to deposit a material such as a metal layer on a wafer. With the wide application of through silicon via (TSV) technology, PVD technology is mainly applied to deposit a barrier layer and a copper seed layer in a through silicon via. In the deposition process of the through silicon via, the wafer is usually fixed by a clamp ring.

Figure 1 is a plan view of a conventional press ring after the wafer is fixed. Referring to Fig. 1, the pressure ring includes an annular body 1, and a plurality of pressure claws 3 are disposed on an inner peripheral wall of the annular body 1, and the plurality of pressure claws 3 are spaced apart and evenly distributed along the circumferential direction of the annular body 1. Each of the jaws 3 presses against the edge region of the upper surface of the wafer 2, thereby achieving fixation of the wafer 2.

Figure 2A is an enlarged partial cross-sectional view of the area A of Figure 1. Figure 2B is an enlarged partial cross-sectional view of the area B of Figure 1. Referring to FIG. 2A and FIG. 2B together, the area A is a pressure claw region having a pressure claw 3 between the pressure ring and the wafer 2; and the B region is a non-claw region having no pressure claw 3 between the pressure ring and the wafer 2. Since the pressure ring does not press the edge region of the wafer 2 in the B region and there is a gap with the wafer 2, the metal ions (for example, metal Al) enter the gap during the deposition process, and Finally deposited on the side or back of the wafer 2, forming a metal coating, this layer of metal coating will greatly interfere with the subsequent process, and ultimately affect the process results.

Summary of the invention

SUMMARY OF THE INVENTION The present invention is directed to at least one of the technical problems existing in the prior art, and proposes a pressure ring and a semiconductor processing apparatus which can solve the problem of depositing a metal plating film on the side or back side of a wafer, thereby improving the process result.

To achieve the object of the present invention, a pressure ring is provided, comprising a pressure ring body, on the inner ring wall of the pressure ring body, and a plurality of fixing portions and a plurality of shielding portions are disposed along a circumferential direction thereof, The plurality of fixing portions and the plurality of shielding portions are arranged to be arranged, wherein the fixing portion is for pressing the first edge region of the upper surface of the wafer when the pressing ring fixes the wafer; the shielding portion is The pressure ring is used to shield the second edge region of the upper surface of the wafer when the wafer is fixed.

Wherein, when the pressure ring fixes the wafer, the shielding portion is opposite to and above the second edge region. .

Wherein, when the pressure ring fixes the wafer, the shielding portion presses the second edge region.

Wherein, the size of the shielding portion follows the following formula:

Where a is the vertical spacing between the bottom surface of the shielding portion and the upper surface of the wafer when the pressure ring is fixed to the wafer; D is the diameter of the wafer; d is the occlusion The inner diameter of the part.

Wherein, the vertical spacing between the bottom surface of the shielding portion and the upper surface of the wafer is 0.3 mm.

Wherein, one-half of the difference between the diameter of the wafer and the inner diameter of the shielding portion is equal to 1 mm.

Wherein, a concave portion is formed at a position of the bottom surface of the fixing portion close to the axial center of the pressure ring body to reduce the contact area of the fixing portion with the upper surface of the wafer.

a first recess is formed at a position of a bottom surface of the fixing portion near an axis of the pressing ring body to reduce a contact area of the fixing portion with an upper surface of the wafer; and a bottom surface of the shielding portion A second recess is formed at a position close to the axis of the pressure ring body to reduce the contact area of the shielding portion with the upper surface of the wafer.

As another technical solution, the present invention also provides a semiconductor processing apparatus including a process chamber in which a susceptor for carrying a wafer and a pressure ring for pressing by pressing the said chamber are provided An edge region of the upper surface of the wafer is used to secure the wafer to the susceptor, and the pressure ring employs any of the above-described pressure rings provided by the present invention.

Wherein the semiconductor processing apparatus includes a physical vapor deposition apparatus for depositing a Cu film, a Ti film, an Al film, an AlN film, a TiN film, an ITO film, an AlCu ₄ film, or the like on the upper surface of the wafer. TiW film.

Wherein, the semiconductor processing device comprises an etching device or a pre-cleaning device.

The invention has the following beneficial effects:

The present invention provides a pressure ring which can fix a wafer by pressing a first edge region of the upper surface of the wafer by means of a fixing portion. At the same time, by blocking the second edge region of the upper surface of the wafer by the shielding portion (ie, the portion of the edge region of the upper surface of the wafer that is not covered by the fixing portion), the gap between the pressing ring body and the wafer can be blocked, thereby avoiding metal Ions are sputtered through the gap to the side or back of the wafer, which in turn improves the process.

The semiconductor processing apparatus provided by the invention can block the gap between the pressure ring body and the wafer by using the pressure ring provided by the invention, so that metal ions can be prevented from being sputtered to the side or the back surface of the wafer through the gap, thereby improving Process results.

DRAWINGS

Figure 1 is a plan view of a conventional pressure ring after fixing a wafer;

Figure 2A is an enlarged partial cross-sectional view of the area A of Figure 1;

Figure 2B is an enlarged partial cross-sectional view of the area B of Figure 1;

Figure 3 is a bottom plan view of a pressure ring according to a first embodiment of the present invention;

Figure 4A is an enlarged partial cross-sectional view of the fixing portion of Figure 3;

Figure 4B is an enlarged partial cross-sectional view of the shielding portion of Figure 3;

4C is an effect view of the shielding portion of FIG. 3 when the process is performed;

Figure 5A is a bottom view of a pressure ring according to a second embodiment of the present invention;

Figure 5B is an enlarged partial cross-sectional view of the pressure ring of Figure 5A.

detailed description

In order to enable those skilled in the art to better understand the technical solutions of the present invention, the pressure ring and the semiconductor processing apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.

Figure 3 is a bottom plan view of a pressure ring according to a first embodiment of the present invention. Referring to FIG. 3, the pressure ring includes a pressure ring body 11 having a closed ring structure, and on the inner ring wall of the pressure ring body 11, and a plurality of fixing portions 121 are disposed along the circumferential direction thereof. And a plurality of shielding portions 122, a plurality of fixing portions 121 and a plurality of shielding portions 122 are arranged at intervals, that is, the plurality of fixing portions 121 and the plurality of shielding portions 122 surround the pressing ring body 11 along the circumferential direction of the pressing ring body 11. Provided, and a shielding portion 122 is disposed between each of the two adjacent fixing portions 121.

4A is an enlarged partial cross-sectional view of the fixing portion of FIG. 3. Referring to FIG. 4A, when the pressure ring fixes the wafer 13, the fixing portion 121 is used to press the first edge region of the upper surface of the wafer 13, thereby achieving fixation of the wafer 13. Specifically, the inner diameter D2 of the fixing portion 121 is smaller than the diameter of the wafer 13, and the bottom surface of the fixing portion 121 is in contact with the first edge region of the upper surface of the wafer 13, which is the fixed portion 121 on the wafer 13. Covered area. Preferably, a recess 123 is formed at a position close to the axial center of the press ring body 11 at the bottom surface of the fixing portion 121 (ie, the surface opposite to the upper surface of the wafer 13), and the width of the recess 123 in the radial direction of the wafer 13 is smaller than the fixed The width of the region where the portion 121 is in contact with the upper surface of the wafer 13, that is, the width of the recess portion 123 in the radial direction of the wafer 13 is smaller than the width of the first edge region. By providing the recess 123, the fixing portion 121 and the upper surface of the wafer 13 are reduced. The contact area of the surface, thereby increasing the area of the metal deposited on the upper surface of the wafer 13, can further improve the process results.

4B is an enlarged partial cross-sectional view of the shielding portion of FIG. 3. Referring to FIG. 4B, the shielding portion 122 is for shielding a second edge region of the upper surface of the wafer 13, that is, a portion of the edge region of the upper surface of the wafer 13 that is not covered by the fixing portion 121. When the pressure ring fixes the wafer 13, the shielding portion 122 is opposite to and above the second edge region. Since the inner ring diameter D1 of the pressure ring body 11 is larger than the diameter of the wafer 13, when the pressure ring is fixed to the wafer 13, there is a gap between the wafer 13 and the pressure ring body 11, in which case the shielding portion 122 is equivalent. Forming an "an eave" above the gap serves to shield the gap between the pressure ring body 11 and the wafer 13. 4C is an effect view of the shielding portion of FIG. 3 when the process is performed. As shown in FIG. 4C, during the deposition process, under the shielding effect of the shielding portion 122, the metal ions are only sputtered to the shielding portion 122 without being sputtered to the side or the back surface of the wafer 13 through the gap. Thereby the process results can be improved. In addition, by disposing the shielding portion 122 above the second edge region without conforming to the second edge region, the contact area with the upper surface of the wafer 13 is not increased under the premise of shielding. The metal area deposited on the upper surface of the wafer 13 is not affected.

Preferably, the size of the shielding portion 122 follows the following formula:

Where a is the vertical distance between the bottom surface 122a of the shielding portion 122 and the upper surface of the wafer 13 when the pressure ring is fixed to the wafer 13; D is the diameter of the wafer 13; and d is the inner diameter D2 of the shielding portion 122. The size of the shielding portion 122 can be ensured that the metal is not sputtered to the side or the back surface of the wafer 13 by following the above formula, wherein 1/7, 1/8, 1/9 or 1/10 is preferable. In addition, outside the above range, the vertical spacing a between the bottom surface 122a of the shielding portion 122 and the upper surface of the wafer 13 may be 0.3 mm, and the diameter D of the wafer 13 and the inner diameter D2 of the shielding portion 122 may be selected. One-half of the difference is equal to 1 mm, ie, (Dd) × 0.5 = b, and b = 1 mm, where b is the width of the portion of the wafer 13 that overlaps the blocking portion 122.

Figure 5A is a bottom plan view of a pressure ring according to a second embodiment of the present invention. Figure 5B is an enlarged partial cross-sectional view of the pressure ring of Figure 5A. Referring to FIG. 5A and FIG. 5B together, the pressure ring provided in this embodiment includes a pressure ring body 21 having a closed ring structure, and an annular stack is disposed on the inner ring wall of the pressure ring body 21. The pressing portion 22 has a closed ring structure which presses the entire edge region of the upper surface of the wafer 24 when the pressure ring fixes the wafer 24.

Further, similar to the first embodiment described above, the annular lamination portion 22 can be regarded as being composed of a plurality of fixing portions and a plurality of shielding portions which are integrally connected, wherein the structure of the fixing portion in this embodiment The structure of the fixing portion 121 in the first embodiment described above is exactly the same, for pressing the first edge region of the upper surface of the wafer 24. The structure of the shielding portion in this embodiment is different from the structure of the shielding portion 122 in the first embodiment, and the difference is only that the shielding portion in the embodiment presses the second edge region of the upper surface of the wafer, that is, The bottom surface of the shielding portion is in contact with the second edge region of the upper surface of the wafer, which can also achieve the shielding effect on the gap between the pressing ring body 21 and the wafer 24, thereby preventing metal ions from being sputtered to the wafer through the gap. Side or back, which in turn improves process results.

Preferably, a recess 23 is formed at a position close to the axial center of the ring body 21 of the bottom surface of the annular lamination portion 22 (i.e., the surface opposite to the upper surface of the wafer 24), the recess 23 being in the radial direction of the wafer 24. The width is smaller than the width of the region where the annular lamination portion 22 is in contact with the upper surface of the wafer 24, that is, the width of the recess 23 in the radial direction of the wafer 24 is smaller than the width of the first edge region. By providing the recess 23, the contact area of the annular lamination portion 22 with the upper surface of the wafer 24 is reduced, so that the metal area deposited on the upper surface of the wafer 24 can be increased, and the process result can be improved. The inner diameter of the contact area of the annular lamination portion 22 with the upper surface of the wafer 24 is D3.

Further, if the annular lamination portion 22 is considered to be composed of a plurality of fixed portions and a plurality of shielding portions that are integrally connected, the annular concave portion 23 can be regarded as being composed of the first concave portion and The second recess is formed, wherein the first recess is disposed at a position of the bottom surface of the fixing portion near the axis of the pressing ring body 21 to reduce the contact area of the fixing portion with the upper surface of the wafer 24. The second recess is provided at a position of the bottom surface of the shielding portion near the axis of the pressure ring body 21 to reduce the contact area of the shielding portion with the upper surface of the wafer 24.

As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus including a process chamber in which a susceptor for carrying a wafer and a pressure ring are disposed, wherein the pressure ring is used for passing pressure The edge region of the upper surface of the wafer is held to secure the wafer to the pedestal. Moreover, the pressure ring can adopt one of various pressure rings provided by the embodiments of the present invention.

In practical applications, the semiconductor processing apparatus may be a physical vapor deposition apparatus for depositing a Cu film, a Ti film, an Al film, an AlN film, a TiN film, an ITO film, an AlCu ₄ film, or a TiW on the upper surface of the wafer. film. Alternatively, the semiconductor processing apparatus may be an etching apparatus or a pre-cleaning apparatus for performing an etching process on the wafer.

The semiconductor processing apparatus provided by the embodiment of the present invention can prevent the metal from being sputtered to the side or the back side of the wafer by using the above-mentioned pressure ring provided by the embodiment of the present invention, thereby improving the process result. Further, when the concave portion is provided on the bottom surface of the fixing portion and/or the shielding portion, it is possible to ensure even increase the metal area deposited on the upper surface of the wafer, thereby further improving the process result.

It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

Claims

A pressure ring includes a pressure ring body, wherein a plurality of fixing portions and a plurality of shielding portions are disposed on an inner ring wall of the pressure ring body and spaced apart in a circumferential direction thereof, the plurality of fixing portions Arranged with a plurality of shielding portions, wherein

The fixing portion is configured to press the first edge region of the upper surface of the wafer when the pressure ring fixes the wafer;

The shielding portion is configured to block a second edge region of the upper surface of the wafer when the pressing ring fixes the wafer;
The pressure ring according to claim 1, wherein when the pressure ring fixes the wafer, the shielding portion is opposite to and above the second edge region.
The pressure ring according to claim 1, wherein said blocking portion presses said second edge region when said pressure ring fixes said wafer.
The pressure ring according to claim 2, wherein the size of the shielding portion follows the following formula:

Where a is the vertical spacing between the bottom surface of the shielding portion and the upper surface of the wafer when the pressure ring is fixed to the wafer; D is the diameter of the wafer; d is the occlusion The inner diameter of the part.
The pressure ring according to claim 2, wherein a vertical pitch between the bottom surface of the shielding portion and the upper surface of the wafer is 0.3 mm.
The pressure ring according to claim 2, wherein said wafer has a diameter and said One-half of the difference in the inner diameter of the shield is equal to 1 mm.
The pressure ring according to claim 2, wherein a recess is formed at a position of a bottom surface of the fixing portion near an axis of the pressure ring body to reduce the fixing portion and the upper surface of the wafer Contact area.
The pressure ring according to claim 3, wherein a first recess is formed at a position of a bottom surface of the fixing portion near an axis of the pressure ring body to reduce the fixing portion and the wafer a contact area of the surface; a second recess is formed at a position of the bottom surface of the shielding portion near the axis of the pressure ring body to reduce a contact area of the shielding portion with the upper surface of the wafer.
A semiconductor processing apparatus includes a process chamber in which a susceptor for carrying a wafer and a pressure ring for pressing an edge region of an upper surface of the wafer to be placed The wafer is fixed to the susceptor, and the pressure ring is the pressure ring according to any one of claims 1-8.
The semiconductor processing apparatus according to claim 9, wherein said semiconductor processing apparatus comprises a physical vapor deposition apparatus for depositing a Cu thin film, a Ti thin film, an Al thin film, or the like on a surface of said wafer. AlN film, TiN film, ITO film, AlCu 4 film or TiW film.
The semiconductor processing apparatus according to claim 9, wherein said semiconductor processing apparatus comprises an etching apparatus or a pre-cleaning apparatus.