A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of: preparing an active matrix including a semiconductor substrate, a transistor, a bit line, a first ILD, a second...http://www.google.es/patents/US20040266095?utm_source=gb-gplus-sharePatente US20040266095 - Method for manufacturing ferroelectric random access memory capacitor
Method for manufacturing ferroelectric random access memory capacitor
Número de solicitud: 10/731,357 Número de publicación: US 2004/0266095 A1 Fecha de presentación: 8 Dic 2003 Patente emitida: US6927121 ( Fecha de emisión 9 Ago 2005)
