A method of creating a deep pocket, capacitor over bit line structure, used for high density, DRAM designs, has been developed. The process consists of creating silicon nitride covered, polysilicon bit line structures, on an insulator layer, contacting an underlying source and drain region. A ...http://www.google.es/patents/US5763306?utm_source=gb-gplus-sharePatente US5763306 - Method of fabricating capacitor over bit line COB structure for a very high density DRAM applications
Method of fabricating capacitor over bit line COB structure for a very high ...
