A method includes changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes determining a history read reference level of a group of history cells associated with a...http://www.google.es/patents/US20060126383?utm_source=gb-gplus-sharePatente US20060126383 - Method for reading non-volatile memory cells
Número de solicitud: 11/205,411 Número de publicación: US 2006/0126383 A1 Fecha de presentación: 17 Ago 2005 Patente emitida: US7242618 ( Fecha de emisión 10 Jul 2007)
