A process for fabricating a tantalum nitride diffusion barrier for the advanced copper metallization of semiconductor devices is disclosed. The process comprises the steps of first preparing a semiconductor device fabricated over the surface of a silicon substrate having a component with a fabricated...http://www.google.es/patents/US5668054?utm_source=gb-gplus-sharePatente US5668054 - Process for fabricating tantalum nitride diffusion barrier for copper matallization
Process for fabricating tantalum nitride diffusion barrier for copper ...
