A structure with bit lines and capacitors for a semiconductor memory device is formed by the following steps. Form a gate oxide layer on a doped silicon semiconductor substrate. Form gate electrode stacks juxtaposed with conductive plugs over the gate oxide layer, the conductive plugs being separated...http://www.google.es/patents/US6174767?utm_source=gb-gplus-sharePatente US6174767 - Method of fabrication of capacitor and bit-line at same level for 8F2 DRAM cell with minimum bit-line coupling noise
Method of fabrication of capacitor and bit-line at same level for 8F2 DRAM ...
