The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface...http://www.google.es/patents/US7939902?utm_source=gb-gplus-sharePatente US7939902 - Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
Field effect transistor having source and/or drain forming schottky or ...
