A MOSFET (100) having a heterostructure raised source/drain region and method of making the same. A two layer raised source drain region (106) is located adjacent a gate structure (112). The first layer (106a) is a barrier layer comprising a first material (e.g., SiGe, SiC). The second layer (106b) comprises...http://www.google.es/patents/US6124627?utm_source=gb-gplus-sharePatente US6124627 - Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
Lateral MOSFET having a barrier between the source/drain region and the ...
