The invention relates to the method of pretreating a deposition chamber intended to be used for the selective vapor deposition of tungsten, characterized in that a plasma of fluorine-containing gas, optionally combined with an inert diluting gas, is induced in the said deposition chamber....http://www.google.es/patents/US5431964?utm_source=gb-gplus-sharePatente US5431964 - Method of pretreating the deposition chamber and/or the substrate for the selective deposition of tungsten
Method of pretreating the deposition chamber and/or the substrate for the ...
