The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of...http://www.google.es/patents/US7728319?utm_source=gb-gplus-sharePatente US7728319 - Vertical phase change memory cell and methods for manufacturing thereof
Vertical phase change memory cell and methods for manufacturing thereof
