After a channel layer (7) containing nitrogen is formed in a channel region (5) in the main surface of a semiconductor substrate (1), a gate insulating film (9) and insulating films (10) are formed as oxide film by a thermal oxidation on the main surface of the semiconductor substrate (1). The insulating...http://www.google.es/patents/US6770550?utm_source=gb-gplus-sharePatente US6770550 - Semiconductor device manufacturing method
