The present invention provides a novel integrated circuit device, which has a flash memory cell. The flash memory cell (100) has a tunnel dielectric layer (113) overlying a surface of a semiconductor substrate. A floating gate layer (107) is defined overlying the tunnel dielectric layer. The gate layer...http://www.google.es/patents/US6261903?utm_source=gb-gplus-sharePatente US6261903 - Floating gate method and device
