Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor...http://www.google.es/patents/US20060102893?utm_source=gb-gplus-sharePatente US20060102893 - Semiconductors containing trans-1,2-bis(acenyl)ethylene compoounds
Número de solicitud: 10/991,562 Número de publicación: US 2006/0102893 A1 Fecha de presentación: 18 Nov 2004 Patente emitida: US7315042 ( Fecha de emisión 1 Ene 2008)
