A process for forming a DRAM capacitor structure, comprised with a HSG silicon/polysilicon crown shaped storage node structure, has been developed. The process features the use of a series of wet clean procedures, used to prepare the surface of the HSG silicon/polysilicon, crown shaped storage node structure,...http://www.google.es/patents/US6010942?utm_source=gb-gplus-sharePatente US6010942 - Post chemical mechanical polishing, clean procedure, used for fabrication of a crown shaped capacitor structure
Post chemical mechanical polishing, clean procedure, used for fabrication of ...
