An embodiment for a method for forming a self-passivated copper interconnect structure. An insulating layer is formed over a semiconductor structure. An opening is formed in the insulating layer. Next, we form a fill layer comprised of Cu and Ti over insulating layer. In a nitridation step, we nitridize...http://www.google.es/patents/US6716753?utm_source=gb-gplus-sharePatente US6716753 - Method for forming a self-passivated copper interconnect structure
Method for forming a self-passivated copper interconnect structure
