A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced....http://www.google.es/patents/US6121076?utm_source=gb-gplus-sharePatente US6121076 - Method for producing semiconductor device
