Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of...http://www.google.es/patents/US6359920?utm_source=gb-gplus-sharePatente US6359920 - Extended wavelength strained layer lasers having strain compensated layers
Extended wavelength strained layer lasers having strain compensated layers
