A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected temperature. The reactor is operated for a...http://www.google.es/patents/US7064066?utm_source=gb-gplus-sharePatente US7064066 - Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode
Method for making a semiconductor device having a high-k gate dielectric and ...
