A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation...http://www.google.es/patents/US20070026613?utm_source=gb-gplus-sharePatente US20070026613 - Flash memory device having a split gate
Número de solicitud: 11/503,126 Número de publicación: US 2007/0026613 A1 Fecha de presentación: 14 Ago 2006 Patente emitida: US7564092 ( Fecha de emisión 21 Jul 2009)
