Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 . ...http://www.google.es/patents/US20010055880?utm_source=gb-gplus-sharePatente US20010055880 - BARRIER LAYER BUFFING AFTER CU CMP
Número de solicitud: 09/401,643 Número de publicación: US 2001/0055880 A1 Fecha de presentación: 22 Sep 1999 Patente emitida: US6656842 ( Fecha de emisión 2 Dic 2003)
