A method for manufacturing a semiconductor device having improved adhesion at an interface between layers of dielectric material, comprising the steps of forming a first layer of dielectric material on at least one part of a structure defined in a semiconductor substrate and forming a second dielectric...http://www.google.es/patents/US6153537?utm_source=gb-gplus-sharePatente US6153537 - Process for the production of a semiconductor device having better interface adhesion between dielectric layers
Process for the production of a semiconductor device having better interface ...
