An EEPROM cell of reduced leakage current during erasure and improved cell topology includes a first conductivity type substrate having a channel region, a trench formed in the channel region of the substrate, first spacers formed on opposed sidewalls of the trench, and a gate oxide film formed...http://www.google.es/patents/US5736765?utm_source=gb-gplus-sharePatente US5736765 - EEPROM cell having improved topology and reduced leakage current
EEPROM cell having improved topology and reduced leakage current
