A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface....http://www.google.es/patents/US20100193763?utm_source=gb-gplus-sharePatente US20100193763 - CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE
CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE
Número de solicitud: 12/727,672 Número de publicación: US 2010/0193763 A1 Fecha de presentación: 19 Mar 2010 Patente emitida: US7932507 ( Fecha de emisión 26 Abr 2011)
