Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer,...http://www.google.es/patents/US8049224?utm_source=gb-gplus-sharePatente US8049224 - Process for transferring a layer of strained semiconductor material
Process for transferring a layer of strained semiconductor material
