A nitride read only memory cell comprising a silicon-germanium layer with a pair of source/drain regions. A strained silicon layer is formed overlying the silicon-germanium layer such that the pair of source/drain regions is linked by a channel that is generated in the strained silicon layer during operation...http://www.google.es/patents/US7274068?utm_source=gb-gplus-sharePatente US7274068 - Ballistic direct injection NROM cell on strained silicon structures
Ballistic direct injection NROM cell on strained silicon structures
