A method of fabricating a semiconductor storage cell that includes first and second source/drain regions underlying first and second trenches defined in a semiconductor substrate. Sidewalls of the trenches are lined with a charge storage stack that includes a layer of discontinuous storage elements (DSEs),...http://www.google.es/patents/US7250340?utm_source=gb-gplus-sharePatente US7250340 - Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
Method of fabricating programmable structure including discontinuous storage ...
