A gate electrode is formed on a semiconductor substrate with a gate insulating film interposed therebetween, and a sidewall spacer is then formed at the lateral sides of the gate electrode on the semiconductor substrate. Epitaxial growth is conducted at a lower growth rate to form, at both lateral sides...http://www.google.es/patents/US6319782?utm_source=gb-gplus-sharePatente US6319782 - Semiconductor device and method of fabricating the same
Semiconductor device and method of fabricating the same
