When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as...http://www.google.es/patents/US7052979?utm_source=gb-gplus-sharePatente US7052979 - Production method for semiconductor crystal and semiconductor luminous element
Production method for semiconductor crystal and semiconductor luminous element
