The time and labor required for bias temperature (BT) treatment of a semi-conductor wafer is reduced by utilizing apparatus in which turning a switch 40 on connects a first d.c. power source 30 to apply a positive high voltage between a first wire 20 and a semiconductor wafer 100 while a second d.c....http://www.google.es/patents/US5635410?utm_source=gb-gplus-sharePatente US5635410 - Bias temperature treatment method
