A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and m...http://www.google.es/patents/US7888261?utm_source=gb-gplus-sharePatente US7888261 - Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
Barrier-metal-free copper damascene technology using atomic hydrogen ...
