An electronic semiconductor device has a sublithographic contact area between a first conductive region and a second conductive region. The first conductive region is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated shape. One of the walls of the first...http://www.google.es/patents/US6972430?utm_source=gb-gplus-sharePatente US6972430 - Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
Sublithographic contact structure, phase change memory cell with optimized ...
